Electrical Breakdown Properties and Space Charge Formation in High Temperature Region in Ultraviolet Ray Irradiated PVC

Polyvinyl chloride (PVC) is the most popular insulating material for electric wiring instruments. However, an exothermic reaction above 150 °C may cause deterioration of the insulating properties of PVC. Therefore, it is important to clarify the heat degradation in PVC, not only to investigate the ignition of electrical wiring products but also to use electrical products safely. It is known that ultraviolet (UV) irradiation causes chemical deterioration of PVC and an increase in its conductivity. Generally, it has been thought that the electrical breakdown properties, electrical conduction, and insulating performance are affected by space charge accumulation in an insulating material. A high temperature pulsed electroacoustic (PEA) system usable up to 250 °C has been developed, and the PEA system can measure the space charge distribution and conduction current in the high temperature range simultaneously. In this investigation, the space charge distribution and conduction current were measured up to electrical breakdown in a non‐UV irradiated sample (normal PVC) and in 353 nm and 253 nm UV‐irradiated PVC samples in the range from room temperature to 200 °C in a DC electric field. In the short wavelength UV irradiated PVC sample (253 nm, 300 h), a deterioration of breakdown strength at 90 °C to 150 °C and negative packet‐like charges were observed at 60 °C and 100 °C, a positive charge accumulated in front of both the anode and cathode above 90 °C, and a higher electric field near the cathode side because the positive charge of the cathode side was greater.     

Efficiency of repeated batch penicillin fermentation using two fermentors. Computer simulation and optimisation

Repeated batch operation using two fermentors (RBTF) to penicillin fermentation was demonstrated by computer simulation to improve productivity. Three operation modes were compared: chemostat, repeated batch operation using a single fermentor (RBSF) and RBTF; in each case account was made of the lag period before growth. The simulated fermentor performances were assessed on the basis of the penicillin productivity and concentration; the simulation was based on published batch fermentation data. It was shown that RBTF was superior to RBSF and chemostat. The advantage of RBTF increased as the lag period became greater.     

Comparison of activities in selective catalytic reduction of NOx by C3H8 over Co/MFI, Fe/MFI, and H/MFI zeolite catalysts

The Co/MFI(SiO₂/Al₂O₃ = 30) were prepared by a precipitation method with NaOCl in alkali solutions exhibited high activities to N₂ at 250 °C for the selective catalytic reduction (SCR) of NO_x. These catalysts showed two UV–vis bands at 700 and 400 nm, indicating the presence of octahedral Co(III) as well as tetrahedral Co(II). The high SCR activity over such Co(III, II)/MFI(30) seems to come from Co(III)---O moieties. The Co(II)MFI(30) catalysts prepared from Co(II)Cl₂ exhibited low SCR activities due to the presence of tetrahedral Co(II) ions in MFI. Less CO formation occurred over Co/MFI catalysts. The Fe/MFI(30) catalyst exhibited high activity due to the presence of some Fe---O species in MFI but more amount of CO were produced during SCR. H/MFI(30) catalyst exhibited a good SCR activity. However, more amount of carbonaceous deposits were produced on it. The correlation between acid concentration and SCR activity was discussed over H/MFIs.     

Preferential Oxidation of CO in H2-Rich Gas at Low Temperatures over Au Nanoparticles Supported on Metal Oxides

We investigated Au catalysts supported on TiO₂, Fe₂O₃, and ZnO for their preferential oxidation of CO in a H₂-rich atmosphere. Both full conversion and selectivity were achieved over Au/Fe₂O₃ and Au/ZnO around room temperature, but at higher temperatures the CO conversion was suppressed due to competition between CO and H₂.     

Preparation of SiB4±x and SiB6 plates by chemical vapour deposition of SiCl4 + B2H6 system

SiB_4±x and SiB₆ plates were prepared by chemical vapour deposition (CVD) using SiCl₄, B₂H₆ and H₂ gases under the conditions of deposition temperatures (T _dep) from 1323–1773 K, total gas pressures (P _tot) from 4–40 kPa and B/Si source gas ratio (m _B/Si=2B₂H₆/SiCl₄) from 0.2–2.8. The effects of CVD conditions on the morphology, structure and composition of the deposits were examined. High-purity and high-density SiB_4±x and SiB₆ plates about 1 mm thick were obtained at the deposition rates of 71 and 47 nm s⁻¹, respectively. The lattice parameter, composition and density of CVD SiB_4±x plates were dependent on their non-stoichiometry. The lattice parameter,a, was 0.6325 nm, butc ranged from 1.262–1.271 nm.The B/Si atomic ratio ranged from 3.1–5.0, and the density ranged from 2.39–2.45×10³ kg m⁻³. The CVD SiB₆ plates showed constant values of lattice parameters (a=1.444 nm,b=1.828 nm,c=0.9915 nm), composition (B/Si=6.0) and density (2.42×10³ kg m⁻³), independent of CVD conditions.     

Rates for intramolecular excimer formation of poly(α-methylstyrene) measured by using picosecond pulse radiolysis

Summary The rate constants for intramolecular excimer formation, k_DM, of poly(α-methylstyrene) with different molecular weight were determined by using picosecond pulse radiolysis. Values of k_DM for poly(α-methylstyrene) are a little smaller than those for polystyrene with nearly same molecular weight. It appears to be mainly due to steric hindrance by methyl substituent of main chain.     

An efficient method for developing requirement specifications for plant control software using a component-based software prototype

This paper proposes an efficient method to develop requirement specifications for Plant Control Software (PCSW) using software-component-based prototypes. Prior to this proposal, domain analyses were conducted on existing PCSWs, and their functions were classified into “similar functions” and “individual functions”. Then PCSW Software Components (PSC: PCSW Software Component, PSCs: PCSW Software Components) were developed to correspond to these functions. PSCs as parameter-style components were developed in order to satisfy the clients’ (we define clients as owners, managers and operators of plants) requirements. A support environment for developing requirement specifications was developed. The environment consists of the Prototype Development Tool (PDT), the Behavior Check Simulator (BCS) and the Requirement Specification Development Tool (RSDT). The method consists of four steps. In the first step, PDT is used to define the parameters to customize PSCs and to compose a PCSW prototype by setting these parameters to PSCs. In the second step, BCS is used to execute the composed PCSW prototype and check its behavior and relevancy against the clients’ expectations. In the third step, steps 1 and 2 are repeated until the behavior of the PCSW prototype satisfies the clients’ requirements. Finally, a requirement specification is developed from the PCSW prototype which fully reflects the clients’ requirements. In order to evaluate the proposed method, it has been applied in five development cases. A Requirement Coverage of 91%, a Requirement Revision Rate of 6%, a PSC Reuse Rate of 92% and a LOC Reuse Rate of 83% have been achieved. In addition, a reduction of 55% in the amount of time required to develop requirement specifications has been achieved. These results indicate that the proposed method has sufficient capability to develop an exhaustive and an adequate PCSW requirement specification. And the developed PSCs have sufficient functions and capability to compose PCSW prototypes, and the support environment is capable of shortening the time taken to develop requirement specifications.     

Novel Constitutive Equation for Predicting Dynamic Recrystallization During Hot Working Considering the Efficiency of Power Dissipation

The efficiency of power dissipation (η) in a dynamic material model has been conventionally used for qualitative predictions to estimate the hot working conditions at which dynamic recrystallization (DRX) is dominant. However, predicting the quantitative value of the DRX fraction (X_DRX) from η remains a challenge. In this paper, a constitutive equation is proposed to quantitatively predict X_DRX using η. The proposed equation for describing X_DRX is derived from the reaction rate equation using the assumption that the DRX rate depends on η. The proposed equation is verified via hot compression tests of equiaxed Ti–6Al–4V ELI alloys (Ti-64) in the (α + β) region. The predicted and experimental X_DRX values are found to be generally consistent with one another, exhibiting an average absolute error of 0.05. Furthermore, the proposed equation provides the same level of prediction accuracy as the conventional Johnson–Mehl–Avrami–Kolmogorov (JMAK) equation. Therefore, the proposed equation can be used to quantitatively predict X_DRX following hot compression tests of equiaxed Ti-64. Moreover, compared with the JMAK equation, the proposed equation is expressed in fewer parameters and constant terms. It is, thus, expected to facilitate the quantitative prediction of X_DRX.

     

The effect of the framework structure on the chemical properties of the vanadium oxide species incorporated within zeolites

V-silicalite catalysts (VS-1 and VS-2) prepared by hydrothermal synthesis have been studied by ESR, XAFS (XANES and EXAFS) and photoluminescence spectroscopy. The in situ characterization of these V-silicalites shows that vanadium is present within the zeolitic framework as a highly dispersed tetrahedrally coordinated V-oxides, VO₄ unit, having a short V=O bond length. Photoluminescence spectroscopy in static and dynamic mode, as well as XAFS studies allow to detect in the V-silicalites different V species than that present in V-HMS or V/SiO₂, in terms of V=O bond length, vibrational energy, bond angle and lifetime of the excited triplet state. It is suggested that the combined contribution of the neighboring Si---OH group attached to the VO₄ unit and the zeolitic rigid framework structure of V-silicalites cause a more significant and pronounced effect on the chemical properties of the VO₄ unit than the flexible structure of V-HMS or V/SiO₂. Moreover, the dynamic quenching of the phosphorescence by the addition of reactant molecules such as NO or propane indicates that the V species in the excited triplet state can be expected to be the active sites for the photocatalytic reactions.     

Cooperative effect of crystallization temperature and NaF addition in the formation process and hydrothermal stability of MCM-48 mesoporous molecular sieve

The hydrothermal stability of MCM-48 was conveniently and effectively improved by increasing the crystallization temperature and directly adding NaF to the synthesis gel. The crystallization temperature varied from 373 K to 403 K. The influences of NaF addition, crystallization temperature and crystallization time on the formation process and hydrothermal stability of MCM-48 were systematically studied here to solve the problem of poor reproducibility. Results from XRD patterns indicated that the crystallization temperature and crystallization time were very critical factors for the improvement of the hydrothermal stability besides NaF addition. The formation process of MCM-48 was significantly accelerated and the pore structure ordering was also greatly improved by increasing the crystallization temperature and F⁻/Si ratio. A high hydrothermally stable MCM-48 mesoporous molecular sieve was obtained after being crystallized at 393 K for 36 h in the presence of NaF, which endured the hydrothermal treatment in boiling water at least for 4 days. However, only an amorphous product was obtained when the crystallization temperature was further increased to 403 K. Results from Si MAS NMR, N₂ adsorption isotherms, TEM, Raman spectra and XRD patterns manifested that the improved stability of MCM-48 was attributed to the high silicates condensation degree and the excellent pore structure ordering. The possible reason for the successful formation of hydrothermally stable MCM-48 sample by controlling the crystallization temperature, time and F⁻/Si ratio was explained here.