An experimental evaluation of spatial distribution for deeply penetrating protons in carbon material

The peak profile of the 4.8-MeV resonance by the ¹²C(p,p)¹²C reaction in backscattering geometry has been analyzed to examine two kinds of stragglings of proton, i.e. the depth straggling in the incoming path and the energy loss straggling in the outgoing path. The analysis, which is combined with existing theoretical treatments for the stopping process and the energy loss straggling, has made it possible to deduce the penetration depth and its spread at the resonance position in carbon materials. The present method, as a new tool for direct inspection of ion beams inside target material, is explained in detail.     

Distributed feedback laser emitting at 1.3 µm for gigabit communication systems

A distributed feedback (DFB) laser emitting at 1.3 μm for gigabit lightwave communication systems has been developed. The distributed feedback structure has been introduced in a newly developed buried heterostructure and designs for stable single-mode operation, high speed modulation, and low noise have been done. Threshold current of 10-15 mA, differential efficiency of around 0.28 mW/mA, low noise, small signal modulation bandwidth of 13.9 GHz, and satisfactory modulation waveform at 5-Gbit/s NRZ modulation have been attained with high single-mode operation yield.     

Stopping cross-section and energy straggling of protons in SiC obtained by nuclear resonant reaction of protons with 12C and 28Si

In order to evaluate stopping cross-section and energy straggling of protons in compound material SiC and its constituents C and Si, resonant backscattering spectra have been measured using proton beams in an energy range 4.9–6.1 MeV per a 100 keV step. We have observed two sharp nuclear resonances at proton energies of 4.808 MeV by ¹²C and 4.879 MeV by ²⁸Si. By systematic analyses of the resonance peak profiles, i.e., energy shift of the peak position and broadening of the peak width, the values of the stopping cross-section and the energy straggling have been deduced to be compared with SRIM-2006 and Bohr’s prediction.     

Practical Design for Improving the Sensitivity to Search for Dark Matter Axions with Rydberg Atoms

A microwave single-photon detector was developed with highly-excited alkaline Rydberg-atoms in a cooled resonant cavity to search for dark matter axions. This detector belongs to a microwave single-photon counter, thus being free from the standard quantum limit (SQL). High sensitivity of the present detector system was demonstrated by measuring the thermal blackbody radiations in the cavity at temperatures as low as 70 mK where the sensitivity is below the SQL. The detection sensitivity of the present system is mainly limited by stray electric fields present in the detection region. Practical design of a new experimental scheme with a guiding electric field through the atomic-beam trajectory is here presented and discussed to avoid the effect of stray electric field and thus to improve the detection sensitivity.      

A High-Sensitivity Microwave-Single-Photon Detector with Rydberg Atoms at Low Temperature

A high-sensitivity microwave-single-photon detector was developed in Kyoto, in which microwave photons in a resonant cavity cooled at very low temperatures are absorbed by highly excited Rydberg atoms and the Rydberg atoms thereby promoted to a higher excited state are then selectively field-ionized and detected. This scheme allows us to count microwave photons one by one, thus provide a single-photon counting without the limit of standard quantum limit (SQL). The apparatus “CARRACK” for the single-photon detector was constructed based on this scheme, where the cavity was cooled down to 10 mK range to reduce the background of thermal blackbody photons from the cavity wall. The apparatus has served for years to search for dark matter axions in the 10 μeV (∼2.4 GHz) mass region. Thermal blackbody photons in a microwave resonant cavity at temperatures as low as 70 mK have been measured, the sensitivity being below the SQL limit. A number of improvements in the detection efficiency and sensitivity have been planned and will be reported. Applications of the detector to fundamental physics are also discussed shortly.      

Designing current collector/composite electrode interfacial structure of organic radical battery

Charge/discharge processes of organic radical batteries based on the radical polymer's redox reaction should be largely influenced by the structure and the composition of the composite electrodes. AC impedance measurement of the composite electrodes reveals a strong correlation between the overall electron transfer resistance of the composite electrode and the material of the current collector, and suggests that the electric conduction to the current collector through the contact resistance should be crucial. We also find that the adhesion and the contact area between the composite electrode and the current collector strongly influence the contact resistance rather than the work functions and the volume resistivities of the composite electrode and the current collector. It is also confirmed that the charge/discharge performance of the composite electrode is related to the overall electron transfer resistance of the composite electrode. These results indicate that the charge/discharge performance of the radical battery is dominated by the interfacial electron transfer processes at the current collector/carbon fiber interface. In fact, the composite electrode which has a high adhesion to the current collector shows a small overall electron transfer resistance and an excellent charge/discharge performance. The rate performance would be much improved by suitably designing the interfacial structure including adhesion and contact area.     

Stopping power and energy straggling of protons in graphite and amorphous carbon obtained from a resonance in BS spectra

Backscattering (BS) spectra with a sharp 4.8-MeV resonance for carbon targets have been measured using proton beams in an energy range 4.85-6.1 MeV per 100-keV step. By systematic analyses of the resonance peak profiles, values of stopping power and energy straggling have been deduced for proton energies from 0.8 to 3.4 MeV which corresponds to a penetration depth of 88 μm. In particular, to investigate the difference in stopping power and straggling caused by target inhomogeneity, we used two target materials which were highly oriented pyrolytic graphite (HOPG, 2.26 g/cm³) as a homogeneous material and amorphous carbon (1.73 g/cm³) as an inhomogeneous material. We describe a method of measuring stopping power and straggling using a resonance in the BS spectra. The stopping powers obtained are compared with the values determined by SRIM-2006. Moreover, collision straggling and a density straggling due to the inhomogeneity of the target materials are evaluated from the width broadening of resonance peaks.     

Low-threshold operation of 1.54 ?m InGaAsP/InP DFB laser with second-order grating

Threshold current has been reduced to 22?35 mA for 1.54 ?m InGaAsP/InP distributed feedback (DFB) lasers with second-order grating, and single-longitudinal-mode operation at an output power of 5 mW has been achieved up to 90°C.     

Uncertainties in the χ2 fit for nuclear radiation spectra

A theoretical basis for χ² fits is reviewed with attention to two error sources: the random uncertainty in spectra obtained by counting nuclear radiations and the systematical deviation between theoretically assumed and real spectrum shapes. A method for examining results obtained by the fits and stating the uncertainties is developed with a series of parameters, i.e., misfits; a complete statement for the quality of fit should give the random and systematical misfits separately. For illustrative purposes, misfits and their standard deviations for γ-ray spectra with different statistics are calculated. Some other parameters previously proposed are discussed to show a shortage in using them as measures for assessing absolutely results from different spectra.     

Low-threshold InGaAsP/InGaP lasers at 810 nm grown on GaAs substrate by LPE

InGaAsP/InGaP double-heterostructure lasers emitting at 810 nm have been fabricated on GaAs substrates using liquid-phase epitaxy (LPE). A threshold current as low as 2.0 kA/cm2 with an external differential quantum efficiency of 54% is obtained. Thus it has been shown that high-quality InGaAsP/InGaP lasers can be obtained by LPE growth.