Correction to: EDVWDD: Event‑Driven Virtual Wheel‑based Data Dissemination for Mobile Sink‑Enabled Wireless Sensor Networks

The Journal of Supercomputing - A correction to this paper has been published: https://doi.org/10.1007/s11227-021-03790-9     

Rendering Grass in Real Time with Dynamic Lighting

The authors present a real-time grass rendering technique that works for large, arbitrary terrains with dynamic lighting, shadows, and a good parallax effect. A novel combination of geometry and lit volume slices provides accurate, per-pixel lighting. A fast grass-density management scheme allows the rendering of arbitrarily shaped patches of grass.     

X-ray absorption fine structure spectroscopy and X-ray diffraction study of cementitious materials derived from coal combustion by-products

Cementitious materials derived from coal combustion by-products have been investigated by means of X-ray diffraction (XRD) and S and Ca K-edge X-ray absorption fine structure (XAFS) spectroscopy. The XRD analysis revealed that these materials are a complex mixture of a small amount of quartz [SiO₂] and three calcium-bearing compounds: hannebachite [CaSO₃·1/2H₂O], gypsum [CaSO₄·2H₂O] and ettringite [(Ca₆(Al(OH)₆)₂(SO₄)₃·26H₂O)]. Analysis of the S XAFS data focused on deconvolution of the X-ray absorption near-edge structure (XANES) regions of the spectra. This analysis established that sulfate and sulfite are the two major sulfur forms, with a minor thiophenic component contained in unburned carbon in the fly ash. Increasing sulfate and decreasing sulfite correlated well with increasing gypsum and ettringite and decreasing hannebachite content in the samples. Different calcium compounds were identified primarily through simple comparison of the Ca K-edge XANES and radial structure functions (RSFs) of the cementitious samples with those of reference compounds. Because of the complex coordination chemistry of calcium in these materials, it was difficult to obtain detailed local atomic environment information around calcium beyond the first CaO peak. Analysis of the extended X-ray absorption fine structure (EXAFS) and the RSF gave average CaO distances in the range 2.44-2.5 Å, with each calcium atom surrounded roughly by eight oxygen atoms. In certain samples, the average CaO distances were close to that in ettringite (2.51 Å), suggesting that these samples have higher ettringite content. The results of S and Ca K-edges XAFS and the XRD data were in reasonable agreement.     

Unconventional magnetism in ZnO nanorods

ABSTRACT

We report room temperature ferromagnetism in vacuum annealed ZnO nanorods. ZnO nanorods were annealed at 600°C for 6 hours in an annealing chamber with a pressure of 10^?6 Torr. Our study indicates that ZnO nanorods develop room temperature ferromagnetism due to the presence of oxygen vacancy defects in it. Presence of large surface area of nanorods and oxygen vacancy are mainly responsible for the observed magnetic behavior.     

High Performance Process Variations Aware Technique for Sub-threshold 8T-SRAM Cell

The demand of low power high density integrated circuits is increasing in modern battery operated portable systems. Sub-threshold region of MOS transistors is the most desirable region for energy efficient circuit design. The operating ultra-low power supply voltage is the key design constraint with accurate output performance in sub-threshold region. Degrading of the performance metrics in Static random access memory (SRAM) cell with process variation effects are of major concern in sub-threshold region. In this paper, a bootstrapped driver circuit and a bootstrapped driver dynamic body biasing technique is proposed to assist write operation which improves the write-ability of sub-threshold 8T-SRAM cell under process variations. The bootstrapped driver circuit minimizes the write delay of SRAM cell. The bootstrapped driver dynamic body bias increases the output voltage levels by boosting factor therefore increasing in switching threshold voltage of MOS devices during hold and read operation of SRAM latch. The increment in threshold voltage improves the static noise margin and minimizing the process variation effects. Monte-Carlo simulation results with 3 \(\sigma \) Gaussian distributions show the improvements in write delay by 11.25 %, read SNM by 12.20 % and write SNM by 12.57 % in 8T-SRAM cell under process variations at 32 nm bulk CMOS process technology node.     

Low noise wide bandgap SiC based IMPATT diodes at sub-millimeter wave frequencies and at high temperature

We have presented a comparative account of the high frequency prospective as well as noise behaviors of wide-bandgap 4H-SiC and 6H-SiC based on different structures of IMPATT diodes at sub-millimeter-wave frequencies up to 2.18 THz. The computer simulation study establishes the feasibility of the SiC based IMPATT diode as a high power density terahertz source. The most significant feature lies in the noise behavior of the SiC IMPATT diodes. It is noticed that the 6H-SiC DDR diode shows the least noise measure of 26.1 dB as compared to that of other structures. Further, it is noticed that the noise measure of the SiC IMPATT diode is less at a higher operating frequency compared to that at a lower operating frequency.     

The Potential Equation and Importance in Illumination Computations

An equation adjoint to the luminance equation for describing the global illumination can be formulated using the notion of a surface potential to illuminate the region of interest. This adjoint equation which we shall call as the potential equation, is fundamental to the adjoint radiosity equation used to devise the importance driven radiosity algorithm. In this paper we first briefly derive the adjoint system of integral equations and then show that the adjoint linear equations used in the above algorithm are basically discrete formulations of the same. We also show that the importance entity of the linear equations is basically the potential function integrated over a patch. Further we prove that the linear operators in the two equations are indeed transposes of each other.     

Development of moderate temperature CVD Al2O3 coatings

Chemically vapor deposited Al₂O₃ coatings, due to their high hardness and chemical inertness, are currently the state of art in the cutting tool industry. The conventional high deposition temperature of about 1050 °C for Al₂O₃ coatings, based on the water–gas shift process, has to a great extend restricted the development of several hybrid coatings, such as TiC/TiN/TiCN/Al₂O₃. To overcome this limitation, alternate systems to deposit Al₂O₃ at moderate temperatures have been investigated. Systems using NO–H₂, H₂O₂, NO₂–H₂ and HCOOH were identified and thermodynamic calculations were performed to evaluate them as potential sources of oxygen donors to form Al₂O₃ in the moderate temperature range of 700–950 °C. Preliminary results have clearly demonstrated that it is possible to grow moderate temperature alumina (using such alternate sources) on the TiC/TiN coated cemented carbide substrates.     

A tetracene-based single-electron transistor as a chlorine sensor

An organic molecular single-electron transistor (SET) based on a tetracene quantum dot has been modeled and employed for sensing of chlorine gas, within the framework of density functional theory. The sensing behavior of the SET is estimated through a charge-stability diagram and total energy as a function of gate potential (TE vs. V_g) for varying distances of chlorine from the SET quantum dot, which could be used as an electronic fingerprint for detection. The better sensing ability, high power efficiency and large operational temperature range of tetracene SET, in comparison to conventional sensors, makes it a very powerful candidate for a chlorine gas sensor.