埋入式无线MEMS 应变片系数的标定

本文研究了一种埋入式MEMS（微电子机械系统）无线应变片性能的实验标定方法，通过引入一个当量应变片，遵照标准应变片的标定规定，本文设计了实用有效的实际标定步骤，分别对标准应变片和MEMS试样进行完全相同的拉伸实验，从而得到埋入MEMS应变片的应变片系数（灵敏度）为13，同时获得在实验试样的制作条件下，测量应变与实际应变之比为2。     

Calibration of MEMS strain sensors fabricated on silicon: theory and experiments

A calibration technique for measuring MEM's strain sensor performance is presented. For resistance based sensors, calibration entails determining a relationship between change in resistance of the sensor and strain (the gauge factor). A modification to the standard calibration method employed for metal foil, resistance strain gauges is presented. The approach entails constructing two nearly identical test specimens: a specimen with the MEM's sensor mounted with adhesive and a specimen with a strain gauge on silicon mounted with adhesive. Data from the strain gauge specimen provide the basis for evaluating the strain at the sensor. Test data are presented which show that strain at the wafer is 52% to 55% of the strain applied to the specimen. A theoretical basis for this strain transfer relationship is presented. Finally, a dimensionless geometry factor, based on shear lag theory, is derived. As the sensor cross section (width and length) and thickness changes, the strain transfer between the specimen and sensor vary linearly with the geometry factor. This result emphasizes the importance in considering the overall sensor geometry when employing semiconductor strain gauges.     

Experimental evaluation of MEMS strain sensors embedded incomposites

Micromechanical in-plane strain sensors were fabricated and embedded in fiber-reinforced laminated composite plates. Three different strain sensor designs were evaluated: a piezoresistive filament fabricated directly on the wafer; a rectangular cantilever beam; and a curved cantilever beam. The cantilever beam designs were off surface structures, attached to the wafer at the root of the beam. The composite plate with embedded sensor was loaded in uniaxial tension and bending. Sensor designs were compared for repeatability, sensitivity and reliability. The effects of wafer geometry and composite plate stiffness were also studied. Typical sensor sensitivity to a uniaxial tensile strain of 0.001 (1000 με) ranged from 1.2 to 1.5% of the nominal resistance (dR/R). All sensors responded repeatably to uniaxial tension loading. However, for compressive bending loads imposed on a 2-3-mm-thick composite plate, sensor response varied significantly for all sensor designs. This additional sensitivity can be attributed to local buckling and subsequent out of plane motion in compressive loading. The curved cantilever design, constructed with a hoop geometry, showed the least variation in response to compressive bending loads. All devices survived and yielded repeatable responses to uniaxial tension loads applied over 10 000 cycles