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The direct current-direct current (DC-DC) converter is designed for 1 T static random access memory (SRAM) used in display
driver integrated circuits (ICs), which consists of positive word-line voltage (V
PWL), negative word-line voltage (V
NWL) and half-V
DD voltage (V
HDD) generator. To generate a process voltage temperature (PVT)-insensitive V
PWL and V
NWL, a set of circuits were proposed to generate reference voltages using bandgap reference current generators for respective
voltage level detectors. Also, a V
PWL regulator and a V
NWL charge pump were proposed for a small-area and low-power design. The proposed V
PWL regulator can provide a large driving current with a small area since it regulates an input voltage (VCI) from 2.5 to 3.3
V. The V
NWL charge pump can be implemented as a high-efficiency circuit with a small area and low power since it can transfer pumped
charges to V
NWL node entirely. The DC-DC converter for 1 T SRAM were designed with 0.11 μm mixed signal process and operated well with satisfactory
measurement results. 相似文献
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WO3中的掺杂及其气敏特性 总被引:27,自引:2,他引:25
在WO3微粉料中掺入1wt%的不同金属氧化物或金属盐,使WO3的气敏性能明显变化,掺入Th^=4,Cd^+4,Li^+1,Ag^+1等可提高对H2S的灵敏度,掺入R^+3,Th^+4,Ce^+4等可增加对乙醇等气体的灵敏性,而对H2,CO,CH4,C4H10等不敏感,而且具有良好的响应恢复特性。 相似文献
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WO3材料对H2S气体的敏感特性 总被引:9,自引:0,他引:9
采用钨酸钠盐酸热分解法制备的WO3微粉对H2S气体具有良好的气敏性能。对0-100ppmH2S灵敏度与H2S呈现良好的线性,并具有快速响应和恢复的特点。 相似文献
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A single poly EEPROM cell circuit sharing the deep N-well of a cell array was designed using the logic process. The proposed
cell is written by the FN tunneling scheme and the cell size is 41.26 μm2, about 37% smaller than the conventional cell. Also, a small-area and low-power 512-bit EEPROM IP was designed using the
proposed cells which was used for a 900 MHz passive UHF RFID tag chip. To secure the operation of the cell proposed with 3.3
V devices and the reliability of the used devices, an EEPROM core circuit and a DC-DC converter were proposed. Simulation
results for the designed EEPROM IP based on the 0.18 μm logic process show that the power consumptions in read mode, program
mode and erase mode are 11.82, 25.15, and 24.08 μW, respectively, and the EEPROM size is 0.12 mm2. 相似文献
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以In(NO3)3、Nb2O5、氨水为原料,采用化学沉淀法制备了不同Nb-In比的复合氧化物纳米材料.通过不同温度(500℃-800℃)烧结得到了不同的Nb-In复合氧化物材料.利用X射线衍射仪对材料的晶体结构进行了表征并估算粒径大小.利用这种材料制备管式厚膜气体传感器.研究表明,元件在温度为100℃时对50×10-6Cl2表现出较高的灵敏度(7 900)和较好的选择性,元件对Cl2的检测下限为0.2×10-6,加热功率为130 mW.最后,对其敏感机理进行了分析. 相似文献