Calculation and Experimental Determination of the Neutronics Characteristics of the IRT-T Research Reactor

Atomic Energy - The results of calculations and experimental determination of the neutronics characteristics of the IRT-T research reactor are presented. The IRT-T reactor is a pool reactor with...     

Damage Development in Gray Cast Iron under Static Deformation

The authors discuss the results of experimental investigation of structural degradation of gray cast iron at various stages of static tensile deformation. Analysis of the deformation process has revealed that damageability of a material under loading can be assessed by both a special strain parameter and scatter of hardness characteristics or a ratio of the modulus deviation to the current value of the elastic modulus. A correlation between these parameters has been established.     

The development and creating of new-generation full-scope simulator and new technology of simulation

Set out is a brief account of the two major accomplishments by the Russian Research Center ‘Kurchatov Institute’ in creating the full-scope simulators and mathematical modeling technologies. Presented are the basic specifications of one of the world's largest simulators—the full-scope simulator for the Leningrad NPP which is the new-generation one. Owing to the extended modeling scope accomplished is the possibility of training personnel to act in terms of not only the design-basis but rather beyond the design-basis accidents. To minimize the expenditures for creating the simulators, analyzers and other modeling and control means, the RRC ‘Kurchatov Institute' has created the unique technology of mathmodeling automation. Thanks to its versatility and application at its creation of the ELUD philosophy (easy to learn, use and develop) good use is made of this technology both in nuclear and thermal power engineering, as well as in gas industry.     

Structure and properties of porous silicon obtained by photoanodization

The results of an investigation of layers of porous silicon (PS), which was obtained by electrochemical etching of p-Si under different illumination conditions — natural light, incandescent light, and light from a mercury lamp with and without a filter — are reported. The structure of the layers was studied by double-crystal x-ray diffractometry, the composition was monitored by means of the IR absorption spectra, and the radiative properties were monitored according to the photoluminescence (PL) spectra. It was established that electrochemical etching under illumination produces PS with a higher porosity and more intense PL whose maximum is shifted into the short-wavelength region. These changes are accompanied by a large disordering of the structure and an increase in the oxygen content in the layer. It is concluded that illumination accelerates the chemical interaction of PS with the electrolyte due to oxidation. High-porosity porous silicon stored in air exhibits quenching of PL. Conversely, PL is excited in layers with a lower porosity. Aging of PS is characterized by an increase in the microdeformation of the layers, a decrease in the crystallite sizes with a partial loss of coherence between the crystallites and the substrate, and an increase in the fraction of the amorphous phase. Fiz. Tekh. Poluprovodn. 31, 1261–1268 (October 1997)     

Inclusions of carbon in ingots of silicon carbide grown by the modified Lely method

The problem of the appearance of carbon inclusions in single-crystal silicon carbide ingots grown by the modified Lely method (the so-called graphitization of the ingot) is analyzed. It is shown that the process of graphitization of the ingot is not related to a deficit of silicon in the growth cell; in contrast, it is excess of silicon at the growth surface that inhibits the ingot growth rate and gives rise to intense corrosion of the graphite fittings.     

Electrical characteristics of (<Emphasis Type="Italic">p</Emphasis>)3C-SiC-(<Emphasis Type="Italic">n</Emphasis>)6H-SiC heterojunctions

The electrical characteristics of (p)3C-SiC-(n)6H-SiC epitaxial heterostructures obtained by sublimation epitaxy in vacuum are studied. The band discontinuities are determined and the energy band diagram of the heterojunction is constructed. It is shown that the obtained heterostructure offers a promising material for high electron mobility transistors.     

Galvanomagnetic properties of 3C-SiC epilayers grown on hexagonal SiC substrates

Epitaxial 3C-SiC films have been grown on 6H-SiC substrates by sublimation epitaxy in vacuum. The Hall effect in these heterostructures and their magnetoresistance have been measured in a temperature range from 1.4 to 300 K. At liquid-helium temperatures, the samples are characterized by low resistance and exhibit negative magnetoresistance in weak fields (～1 T). Analysis of the experimental results suggests that the low resistance of samples is most probably due to the metal-insulator transition in the epitaxial 3C-SiC films.