Monte Carlo Simulation of Electron Swarm in the Diamond Film Growth via EACVD

Monte Carlo simulations are adopted to study the electron transport porcess in the non-uniform electric field.Some important parameters of electrons in diamond films dynamic process at low temperature via EACVD such as angle distribution,energy distribution,average energy of electrons are given.The results indicate that the electron scattering near the substrate is mainly of a large-angle scattering,exhibiting a double-peaking distribution .All of the conclusions provide some theoretical data referential to the vapor dynamic model of diamond film growth at low temperature via EACVD.     

The Effect of Pressure on the Dissociation of H2／CH4 Gas Mixture during Diamond Films Growth via Chemical Vapor Deposition

Monte Carlo simulations are adopted to study the electron motion in mixture of H2 and CH4 duruing diamond synthesis via Glow Plasma-assisted Chemical Vapor Deposition (GPCVD),The non-uniform electric field is used and the avalanche of electrons is taken into account in this simulation.The average energy distribution of electrons and the space distribution of effective species such as CH3,CH3^ ,CH^ and H at various gas pressures are given in this paper,and optimum experimental conditions are inferred from these results.