DEPTH PROFILING OF ~1H AND/OR ~4He IN SOLIDS BY ERD WITH ~(19)F IONS

1H or 4He depth profiling in 1H or 4He implanted silicon samples was performed by elastic recoil detection (ERD) with multicharged 19F ions at a small accelerator. Optimization of the experimental parameters such as incident ions energy and scattering geometry were calculated by computer simulation. Depth resolution of about 20-30nm at depth of 400nm for 1H and at depth of 300nm for 4He can be obtained, respectively.     

CALCULATION AND OPTIMIZATION OF EXPERIMENTAL PARAMETERS IN ELASTIC RECOIL DETECTION (ERD)

Elastic recoil detection (ERD) proposed for the analysis of light elements in a heavier matrix is an appropriate method for its specialities. Optimization of experimental parameters in ERD such as scattering geometry and incident beam energy is very important when using a small accelerator with energy lower than 10 MeV. In this paper a computer program ERDAl is developed for the purpose, and is proved to be useful for practical handling of ERD experiments.