输电线路等距离等转角布设转向滑车的研究

在张力放线阶段,张力场和牵引场的选择显得尤为重要,但是在输电线路建设中常遇到河谷纵横、高山林立等地形问题,导致张力场和牵引场很难选在顺线路方向,一些险峻地形不可避免地会出现较大的转向。依据规范和工程经验,探讨在张力放线中0~180°等距离等转角的布设转向滑车,使转向滑车受力均匀、安全可靠。     

ICPECVD类金刚石膜沉积过程的发射光谱诊断研究

利用发射光谱(Optical emission spectroscopy,OES)对感应耦合等离子体增强化学气相沉积(Inductivelycoupled plasma enhance chemical vapor d印osition,ICPECVD)类金刚石(Diamondlike carbon,DLC)膜过程中的各种基团进行分析,并对不同条件下薄膜沉积速率以及薄膜显微硬度进行测试.分析结果发现,感应耦合等离子体源激发甲烷等离子体中存在比较突出的碳氢离子成分,从而促进形成高硬度的DLC膜.而且射频功率、沉积气压等沉积参数的变化对DLC薄膜沉积过程的中性基团、离子基团以及原子氢等成分都有着明显影响,从而最终影响薄膜沉积过程及薄膜性质.     

Effect of Duty Cycle on the Characteristics of Pulse-Modulated Radio-Frequency Atmospheric Pressure Dielectric Barrier Discharge

Using a one-dimensional fluid model, the pulse-modulated radio-frequency dielectric barrier discharge in atmospheric helium is described. The influences of the pulse duty cycle on the discharge characteristics are studied. The numerical results show that the dependence of discharge characteristics on the duty cycle is sensitive in the region of around 40% duty cycle under the given simulation parameters. In the case of a larger duty cycle, the plasma density is higher, the discharge becomes more intense, but the power consumption is higher. When the duty cycle is lower, one can get a weaker discharge, lower plasma density and higher electron temperature in the bulk plasma. In practical applications, in order to get a higher plasma density and a lower power consumption, it is more important to choose a suitable duty cycle to modulate the RF power supply.     

电弧离子镀脉冲负偏压电源负载特性的仿真分析

通过等离子体物理理论和仿真分析 ,明确了电弧离子镀的等离子体负载本质是等离子体鞘层引起的容性负载 ,探讨了电弧离子镀脉冲负偏压电源的设计方法。     

A Numerical Study on Tuned Substrate Self-Bias in a Radio-Frequency Inductively Coupled Plasma

The tuned substrate self-bias in a radio-frequency inductively coupled plasma is controlled by varying the impedance of an external tuning LCR （inductor, capacitor and resistor） network inserted between the substrate and the ground. In experiments, it was found that the variation of the tuned substrate self-bias with the tuning capacitance demonstrated three features, namely, continuity, instability and bistability. In this paper, a numerical study is focused on the elucidation of the physical mechanisms underlying continuity and bistability. For the sake of simplicity and feasibility to include the key factors influencing the tuned substrate bias, the tedious calculation of inductive-coupling to obtain the plasma density axtd electron temperature is omitted, and discussion of the tuned substrate self-bias is made under the prescribed plasma density and electron temperature. On the other hand, the parameters influencing capacitive- coupling are retained in modeling the system with an equivalent circuit. It is found that multi-stable state appears when one of the parameters, such as the resistance in LCR, substrate area and plasma density, decreased to its critical value, or the rf voltage or electron temperature increased to the critical value individually. In the reverse cases, the tuned substrate self-bias varies continuously with the tuning capacitance.     

A Study on the Tuned Bias of Substrate in an Inductively-coupled Plasma Source

1. IntroductionRadio-frequency (rf) capacitively-coupled plasma(CCP) source has been successfully used in manyfields such as film deposition, etching, surfaCe modification. However, one of the disadvantages of thisplasma discharge is the lack of independent control over plasma generation and bombarding energy of ion upon the processed materials surface [1].To achieve independent control over the above twoprocesses) researchers have put forth different techniques. A variable inductor was plac…     

电弧离子镀脉冲负偏压电源及其特性的研究

一种脉冲负偏压电源是由多个脉冲分量形成的电路串联构成，脉冲的频率和占空比直接的高压侧调节。介绍了电源的结构和关键技术，并结合薄膜沉积试验中的电压、电流波形和计算机仿真分析，探讨了电源和电弧离子镀的等离子体负载间的匹配，提出了电弧离子镀脉冲负偏压电源的设计要求。     

WC-Co硬质合金表面不同去钴预处理方法的比较研究

用微波等离子体化学气相沉积(MWPCVD)制备金刚石薄膜涂层之前,采用盐酸、硝酸化学腐蚀和氢-氧等离子体对WC-Co硬质合金(YG6)基体表面进行去钴预处理。扫描电子显微镜形貌观察和X射线衍射谱分析都表明,与化学腐蚀方法相比,氢-氧等离子体处理具有独特的表面去钴效果,沉积金刚石薄膜的喇曼谱分析更证实其对涂层质量的改善,且对MWPCVD过程而言有其技术上的一些优越性。     

ECR－PECVD制备Si_3N_4薄膜的特性及其应用的研究

本文利用ＥＣＲ－ＰＥＣＶＤ技术在不同沉积温度下制备了Ｓｉ３Ｎ４薄膜，利用Ｓｉ３Ｎ４薄膜的透射光强度曲线计算了Ｓｉ３Ｎ４薄膜的折射率和膜厚，计算结果与实测值符合较好。结果表明，随着沉积温度的提高，Ｓｉ３Ｎ４薄膜的折射率增大，致密性提高，Ｓｉ３Ｎ４薄膜厚度在６０ｍｍ直径范围内不均匀度小于５％。测定了Ｓｉ３Ｎ４薄膜的显微硬度。利用荧光分光光度计测定了Ｓｉ３Ｎ４薄膜的光致发光效应。初步进行了Ｓｉ３Ｎ４薄膜的超高频大功率晶体管器件中作为钝化膜的应用研究。     

ECR—PECVD制备Si3N4硬质陶瓷薄膜的研究

采用电子回旋共振等离子体化学气相沉积（ＥＣＲ－ＰＥＣＶＤ）技术制备了Ｓｉ３Ｎ４薄膜。利用显微硬度计测定了Ｓｉ３Ｎ４薄膜的表面微硬度。由摩擦测试机对ＳｉＮ４薄膜的摩擦性能进行了测试分析。结果表明，Ｓｉ３Ｎ４薄膜的摩擦系数和单位时间的磨损量较小，该膜具有良好的耐磨性和耐划伤能力。