A low-resistance self-aligned T-shaped gate for high-performancesub-0.1-μm CMOS

This paper describes the high performance of T-shaped-gate CMOS devices with effective channel lengths in the sub-0.1-μm region. These devices were fabricated by using selective W growth, which allows low-resistance gates smaller than 0.1 μm to be made without requiring fine lithography alignment. We used counter-doping to scale down the threshold voltage while still maintaining acceptable short-channel effects. This approach allowed us to make ring oscillators with a gate-delay time as short as 21 ps at 2 V with a gate length of 0.15 μm. Furthermore, we experimentally show that the high circuit speed of a sub-0.1-μm gate length CMOS device is mainly due to the PMOS device performance, especially in terms of its drivability     

Electrochemically induced asymmetrical etching in InAlAs/InGaAs heterostructures for MODFET gate-groove fabrication

We have achieved a self-controlled asymmetrical etching in metalorganic chemical vapor deposition-grown InAlAs/InGaAs heterostructures, which can be suitable for fabricating modulation-doped field-effect transistors (MODFETs) with gate-groove profiles for improved performance. The technology is based on electrochemical etching phenomena, which can be effectively controlled by using different surface metals for ohmic electrodes. When surface metals of Pt and Ni are deposited on the source and the drain, respectively, the higher electrode potential of Pt results in slower etching on the source side than on the drain side. Thus, asymmetry of gate grooves can be formed by wet-chemical etching with citric-acid-based etchant. This represents a new possibility to conduct “recess engineering” for InAlAs/InGaAs MODFETs.     

Monoclonal antibody analysis of phosphatidylserine and protein kinase C localizations in developing rat cerebellum

Understanding the topographical relationships between phosphatidylserine (PS) and protein kinase C (PKC) within neurons can provide clues about the mechanism of translocation and activation of PKC. For this purpose we applied monoclonal antibodies (Abs) of PS and PKC to sections of developing rat cerebellum. The anti-PKC Ab immunohistochemical pattern showed homogeneous staining of Purkinje cells over various postnatal ages, whereas the anti-PS Ab staining showed a heterogeneous localization over these ages. Purkinje cells did not stain well between postnatal day 14 (PND 14) and PND 21, suggesting that the PS was lost from the membrane during preparation of the sections during this period. These data imply that interactions between PS and PKC vary in Purkinje cells during postnatal development.     

A high resolution negative working resist,LMR-UV,for g- and i-line lithography

LMR-UV (“low molecular weight resist for uv lithography”), a naphthoquinone-diazide sulfonic acid ester of a novolak resin, is a negative working resist. The mechanism of insolubilization of LMR-UV is based on the facts that the naphthoquinone-diazide moiety is decomposed to indenecarboxylic acid (polar compound) by photolysis upon UV irradiation and that the irradiated resist film insolubilizes in a non-polar developer. LMR-UV reliably forms 0.6 μm lines and spaces over a reflective substrate with steps by using a g-line stepper having a 0.35 NA lens. 0.6 μm-wide aluminum patterns over topography are obtained by use of g-line exposure and reactive ion etching. By use of an i-line aligner (NA = 0.42), LMR-UV resolves 0.25 μm space patterns with overhang profiles. The profiles are due to the large absorption coefficient of 3.8 μm^?1. 0.3 μm wide aluminum patterns are formed by i-line exposure and lift-off metallization.     

Analysis of Reusability using ‘Marginal Reuse Rate’

While reuse is an effective lifecycle option in terms of reduction of environmental loads and value of reutilization, reuse has inherent difficulties. Our naive question is why component reuse of home appliances seems impossible while that of photocopiers succeeded. This paper clarifies an essential factor for successful reuse; that is, the balance between supply and demand of reusables, and proposes an index named ‘marginal reuse rate,’ which indicates upper limit of reusability. By using this index, reusability of several products is analyzed. The marginal reuse rate indicates that design of lifecycle, in addition to product design, is indispensable for successful reuse.     

Multi-level,multi-objective optimization in process engineering

This paper presents a method for feasible decomposition applicable to large-scale, non-linear, multi-objective problems. The method, comprising a multi-level problem formulation and an interactive algorithm, has distinct advantages for dealing with real-world multi-objective optimization which is carried out by hierarchically arranged units of decision-making. The method is illustrated by its application to the optimal design of a water use and treatment process system.     

Correction of color information of a 3D model using a range intensity image

Most active optical range sensors record, simultaneously with the range image, the amount of light reflected at each measured surface location: this information forms what is called a range intensity image, also known as a reflectance image. This paper proposes a method that uses this type of image for the correction of the color information of a textured 3D model. This color information is usually obtained from color images acquired using a digital camera. The lighting condition for the color images are usually not controlled, thus this color information may not be accurate. On the other hand, the illumination condition for the range intensity image is known since it is obtained from a controlled lighting and observation configuration, as required for the purpose of active optical range measurement. The paper describes a method for combining the two sources of information, towards the goal of compensating for a reference range intensity image is first obtained by considering factors such as sensor properties, or distance and relative surface orientation of the measured surface. The color image of the corresponding surface portion is then corrected using this reference range intensity image. A B-spline interpolation technique is applied to reduce the noise of range intensity images. Finally, a method for the estimation of the illumination color is applied to compensate for the light source color. Experiments show the effectiveness of the correction method using range intensity images.     

A 950-MHz rectifier circuit for sensor network tags with 10-m distance

This paper presents a 950-MHz wireless power transmission system and a high-sensitivity rectifier circuit for ubiquitous sensor network tags. The wireless power transmission offers a battery-life-free sensor tag by recharging the output power of a base station into a secondary battery implemented with the tag. For realizing the system, a high-sensitivity rectifier with dynamic gate-drain biasing has been developed in a 0.3-/spl mu/m CMOS process. The measurement results show that the proposed rectifier can recharge a 1.2-V secondary battery over -14-dBm input RF power at a power conversion efficiency of 1.2%. In the proposed wireless system, this sensitivity corresponds to 10-m distance communication at 4-W output power from a base station.     

Heavy-ion-induced luminescence of amorphous SiO2 during nanoparticle formation

Silica glass was implanted with negative 60 keV Cu ions at an ion flux from 5 to 75 μA/cm² up to a fluence of 1 × 10¹⁷ ions/cm² at initial sample temperatures of 300, 573 and 773 K. Spectra of ion-induced photon emission (IIPE) were collected in situ in the range from 250 to 850 nm. Optical absorption spectra of implanted specimens were ex situ measured in the range from 190 to 2500 nm.

IIPE spectra showed a broad band centered around 560 nm (2.2 eV) that was assigned to Cu⁺ solutes. The band appeared at the onset of irradiation, increased in intensity up to a fluence of about 5 × 10¹⁵ ions/cm² and then gradually decreased indicating three stage of the ion beam synthesis of nanoclusters: accumulation of implants, nucleation and growth nanoclusters. The IIPE intensity normalized on the ion flux is independent on the ion flux below 20 μA/cm²at higher fluences. The intensity of the band increased with increasing samples temperature, when optical absorption spectra reveal the increase of Cu nanoparticles size.