Design and evaluation of a mobile smart home interactive system with elderly users in Brazil

Personal and Ubiquitous Computing - This article presents a study concerning the evaluation of a smart home control system for elderly people with a sample of 10 users in a city in the interior of...     

Mutational analysis of amiloride sensitivity of the NhaA Na+/H+ antiporter from Vibrio parahaemolyticus

The activity of the NhaA Na+/H+ antiporter of Vibrio parahaemolyticus is inhibited by amiloride. We found an amino acid sequence in the NhaA that was identical to a putative amiloride binding domain of the Na+/H+ exchanger in mammalian cells. We constructed mutant NhaAs that had amino acid substitutions in the putative amiloride binding domain by site-directed mutagenesis. These include V62L (Val62 replaced by Leu), F63Y, F64Y, and L65F. Most mutant NhaAs showed decreased sensitivity for amiloride. Among these, the F64Y mutant NhaA showed the least amiloride sensitivity, with a Ki value 7 to 10 times greater than that in the wild type. Thus, the sequence between residues V62 and L65 in NhaA, especially F64, is very important for the inhibitory effect of amiloride on the antiporter.     

Enhanced hot-carrier-degradation in LDD MOSFET's under pulsedstress

Hot-carrier degradation of lightly doped drain (LDD) MOSFET's under ac stress is investigated. Enhanced ac degradation occurs in LDD MOSFET's as well as in single-drain MOSFET's. However, there is a peculiar degradation mechanism in LDD MOSFET's. For single-drain MOSFET's, enhanced ac degradation appears in both threshold voltage and transconductance at stress drain voltages larger than a critical value. On the other hand, for LDD MOSFET's, although the enhanced degradation in threshold voltage and transconductance appears at stress drain voltages larger than a critical value, the enhanced degradation in transconductance appears even under stress drain voltages lower than the critical value. The difference in the ac-enhanced degradation between LDD and single-drain structures can be explained by a hot hole generated neutral-electron-trap model and the change in hot-hole-injected oxide region according to stress bias conditions     

基于RD算法的星载SAR斜视成像

本文研究了用距离一多普勒（ＲＤ）算法来实现星载 ＳＡＲ的斜视成像处理。给出了星载 ＳＡＲ斜视时的空间几何模型和回波信号模型，详细分析了地球自转和斜视产生的多普勒质心所引起的距离走动差异，及时域和频域校正对成像的影响，并研究了一种改进的ＲＤ算法进行距离走动的校正，此算法能适应大的斜视距离走动和地球自转距离走动。针对不同的距离走动校正进行了计算机仿真，理论分析和仿真结果表明：这种改进的ＲＤ算法是有效的。     

High ratios of free to total insulin-like growth factor-I in early infancy

A case of huge desmoid tumor successfully treated by hyperthermoradiotherapy is described. A 23-year-old man with familial adenomatous polyposis was operated upon for a desmoid tumor in the mesenterium involving the right kidney and small intestine in 1988. In 1990, the tumor recurred and could not be resected because of the involvement of the vena cava. The tumor grew larger and larger, and occupied two-thirds of the right lower quadrant. Several therapies using sulindac, tamoxifen, prednisolone, indomethacin, luteinizing hormone-releasing hormone analogue, and ascorbate were all ineffective. Finally, the combination of radiation and hyperthermia was used over a 6-month period. At the end of the hyperthermoradiotherapy, the tumor in the abdominal wall was markedly reduced in size, and the protruded abdominal wall became flat. To our best knowledge, this is the first report of the successful treatment of a huge desmoid tumor by hyperthermoradiotherapy.     

Hot-carrier-injected oxide region in front and back interfaces inultra-thin (50 nm), fully depleted, deep-submicron NMOS andPMOSFET's/SIMOX and their hot-carrier immunity

The hot-carrier-injected oxide region in the front and back interfaces is systematically clarified for fully depleted surface-channel nMOSFET's and surface-channel and buried-channel pMOSFET's fabricated on an ultra-thin (50 nm)-film SIMOX wafer. Based on these results, the influence of these injected carriers on front-channel properties is investigated. NMOSFET degradation is shown to be caused by hot-carriers injected into the drain side of the front oxide and pMOSFET degradation by hot-electrons injected into the drain side of both the front oxide and the back oxide. Additionally, it is shown experimentally that these fully depleted devices with effective channel lengths between 0.1-0.2 μm have fairly high hot-carrier immunity, even for single-drain structures     

一种PN码自适应捕获门限的改进算法

文献[1]提出了一种用于直扩系统的PN码自适应门限算法。但该文献也指出,此算法对门限总数十分敏感。当门限总数设置不当时,系统的平均捕获时间将显著增加。这限制了该算法在实际中的应用。本文就此提出了改进,给出了算法及电路框图。仿真结果表明,与原方案相比,改进算法改善了对门限总数的敏感性,降低了PN码平均捕获时间。     

Blue electroluminescent devices withSrGa2S4:Ce for full-color display

In order to realize full-color electroluminescent (EL) displays, which are expected as a dominant candidate for the future multimedia flat panel display, blue EL devices with SrGa₂S₄:Ce have been prepared by molecular beam epitaxy (MBE). This paper proposes a novel deposition method employing Sr metal and Ga₂S₄ compound as the source materials. A single-phase SrGa₂S₄ layer is obtained in a Ga₂S₃/Sr flux ratio of 60 and at the growth temperature of 560°C. We have obtained the well-saturated blue with CIE color coordinates of x=0.14, y=0.14 and brighter blue EL devices made by optimizing the growth conditions in MBE. The maximum luminance of 70 cd/m² in comparison with the 3 cd/m₂ of our previous EL devices, is achieved at a driving frequency of 1 kHz     

A dynamic-programming-based exact algorithm for general single-machine scheduling with machine idle time

This paper proposes an efficient exact algorithm for the general single-machine scheduling problem where machine idle time is permitted. The algorithm is an extension of the authors’ previous algorithm for the problem without machine idle time, which is based on the SSDP (Successive Sublimation Dynamic Programming) method. We first extend our previous algorithm to the problem with machine idle time and next propose several improvements. Then, the proposed algorithm is applied to four types of single-machine scheduling problems: the total weighted earliness-tardiness problem with equal (zero) release dates, that with distinct release dates, the total weighted completion time problem with distinct release dates, and the total weighted tardiness problem with distinct release dates. Computational experiments demonstrate that our algorithm outperforms existing exact algorithms and can solve instances of the first three problems with up to 200 jobs and those of the last problem with up to 80 jobs.     

Correlation of electrical properties and internal friction in mixed conduction glasses containing ionic and electronic conduction (1) Fe2O3-Na2O-P2O5 glasses

The electrical properties and internal friction in (40–x)Fe₂O₃·xNa₂0.60P₂O₅ glasses were measured. Two or three peak on internal friction were observed in the temperature range of –100 to 300° C at a frequency of about 1 Hz. The peak area of internal friction could be explained quantitatively by the additivity law of diffusion of Na⁺ ion and hopping of electrons which are carriers similar to those of dielectric loss. Activation energy, peak temperature of dielectric loss and internal friction showed almost the same value. Both relaxation phenomena have the same mechanism which is due to the diffusion of Na⁺ion and the hopping of electrons between Fe²⁺ Fe³⁺. The high-temperature peak is assumed to result from the interaction between protons or alkali ions and non-bridging oxygen.