Optimization of excitation frequency and guided wave mode in acoustic wavenumber spectroscopy for shallow wall-thinning defect detection

In plate-like structures, wall-thinning defects resulting from corrosion may not be accompanied by any indication of damage on the surface. Thus, inspections are required to ensure that wall-thinning defects are within allowable limits. However, conventional ultrasonic techniques require physical contact to the structure. Alternatively, acoustic wavenumber spectroscopy (AWS) may be used for detecting, locating, and characterizing defects. This paper describes the performance of AWS in the estimation of a wall-thinning defect size in thinplate structures using finite element analysis (FEA). Through a series of FEAs, the structure’s steady-state response to a single-tone ultrasonic excitation is simulated, and the wall-thinning defect-size effect on the wavenumber-estimation accuracy is investigated. In general, the A0 guided wave mode is widely used to visualize defects because of the nature of the wave speed variation in relation to the plate thickness. However, it is not appropriate for the detection of relatively shallow wall-thinning defects, because the rate of change in wave speed with the thickness decreases with increasing plate thickness. To overcome this limitation, we propose a method to optimize excitation frequency and effective guided wave mode instead of utilizing the A0 mode. The results can be used to determine the size of shallow wall-thinning defects in plate-like structures.     

Interstitial Mo‐Assisted Photovoltaic Effect in Multilayer MoSe2 Phototransistors

Thin‐film transistors (TFTs) based on multilayer molybdenum diselenide (MoSe₂) synthesized by modified atmospheric pressure chemical vapor deposition (APCVD) exhibit outstanding photoresponsivity (103.1 A W^?1), while it is generally believed that optical response of multilayer transition metal dichalcogenides (TMDs) is significantly limited due to their indirect bandgap and inefficient photoexcitation process. Here, the fundamental origin of such a high photoresponsivity in the synthesized multilayer MoSe₂ TFTs is sought. A unique structural characteristic of the APCVD‐grown MoSe₂ is observed, in which interstitial Mo atoms exist between basal planes, unlike usual 2H phase TMDs. Density functional theory calculations and photoinduced transfer characteristics reveal that such interstitial Mo atoms form photoreactive electronic states in the bandgap. Models indicate that huge photoamplification is attributed to trapped holes in subgap states, resulting in a significant photovoltaic effect. In this study, the fundamental origin of high responsivity with synthetic MoSe₂ phototransistors is identified, suggesting a novel route to high‐performance, multifunctional 2D material devices for future wearable sensor applications.     

Sub-Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion-Derived Hf0.5Zr0.5O2

The fabrication of Hf_0.5Zr_0.5O₂-ferroelectric negative capacitor using solution combustion is presented for the first time. The starting materials used for the solution combustion to form equimolar Hf_0.5Zr_0.5O₂ are to act as both combustible elements and cation sources. Jain's method, which is used for estimating the stoichiometric quantities of precursors in propellant chemistry, has also been modified and applied. The conventional assumption for this method that molecular oxygen does not take part in the reaction is refuted and stoichiometric combustion in the presence of molecular oxygen is proposed. This reaction is followed by post-rapid thermal processing to stabilize the metastable, non-centrosymmetric orthorhombic phase. The thin film stacks, Hf_0.5Zr_0.5O₂/HfO₂, are used to achieve sub-thermionic swing (forward sweep: 25.42  ± 8.05 mV dec⁻¹, reverse sweep: 42.56  ± 4.87 mV dec⁻¹) in MoS₂ negative capacitance field effect transistors with a hysteresis of ≈ 40 mV at 1 nA, resulting in ultra-low-power operation.     

Interaction of acoustic surface waves induced by inter-digital transducer with wall thinning defect in pipe structure

Most structural health monitoring (SHM) systems require transducers permanently attached to or integrated with the monitored structure to form a type of smart structure. It is difficult to permanently attach traditional ultrasonic transducers for non-destructive testing of structures for health monitoring. However, inter-digital transducers (IDTs) can be considered for on-site SHM because of the small size and economic efficiency of the IDT sensor. In this paper, an alternative sensor approach is proposed using IDT rather than conventional transducers to identify the interaction of surface acoustic waves (SAWs) with a wall-thinning defect. The SAWs generated by IDT sensors are modeled using the finite element analysis method. Acoustic wave propagation behavior in plate and pipe structures was reviewed, and the effect of the curvature of curved plate was investigated. From the interaction behavior observed between SAWs and a wallthinning defect in the pipe, which was determined using numerical simulation and tests, a novel concept is proposed for characterizing wall-thinning defects in pipelines.     

Technology Standard Competition Analysis in the 4th Wireless Telecommunication Industry Using Evolutionary Game Theory

Wireless Personal Communications - In a given environment, individuals with genetic properties that are appropriate for the environment are more likely to survive or produce more offspring than...     

Analysis and prevention of microcracking phenomenon occurring during strip casting of an AISI 304 stainless steel

This study was concerned with the effects of microstructural parameters on the microcracking phenomenon occurring during strip casting of an AISI 304 stainless steel. Detailed microstructural analyses of the microcracked regions showed that microcracks were formed mainly along tortoise-shell-shaped depressions and that their number and size were considerably reduced when strip casting was done right after a shot-blasting or pickling treatment of the casting roll surface. This microcracking phenomenon was closely related to the formation of a black oxide layer, which was mainly composed of manganese-rich oxides, on the roll surface. The black oxide layer acted as a barrier of thermal transfer between the rolls and melt, led to an increased gas gap and inhomogeneous solidification of cast strips, and, thus, played a role in forming both tortoise-shell—shaped depressions and microcracks on the strip surface. The installation of brush rolls behind the casting rolls was suggested as a method to prevent microcracks, because the brush rolls could continuously scrape off the black oxide layer affixed on the roll surface during strip casting.     

A highly sensitive chemical gas detecting transistor based on highly crystalline CVD-grown MoSe<Subscript>2</Subscript> films

Layered semiconductors with atomic thicknesses are becoming increasingly important as active elements in high-performance electronic devices owing to their high carrier mobilities,large surface-to-volume ratios,and rapid electrical responses to their surrounding environments.Here,we report the first implementation of a highly sensitive chemical-vapor-deposition-grown multilayer MoSe2 field-effect transistor (FET) in a NO2 gas sensor.This sensor exhibited ultra-high sensitivity (S =ca.1,907 for NO2 at 300 ppm),real-time response,and rapid on-off switching.The high sensitivity of our MoSe2 gas sensor is attributed to changes in the gap states near the valence band induced by the NO2 gas absorbed in the MoSe2,which leads to a significant increase in hole current in the off-state regime.Device modeling and quantum transport simulations revealed that the variation of gap states with NO2 concentration is the key mechanism in a MoSe2 FET-based NO2 gas sensor.This comprehensive study,which addresses material growth,device fabrication,characterization,and device simulations,not only indicates the utility of MoSe2 FETs for high-performance chemical sensors,but also establishes a fundamental understanding of how surface chemistry influences carrier transport in layered semiconductor devices.     

A Colorimetric Multifunctional Sensing Method for Structural‐Durability‐Health Monitoring Systems

A colorimetric multifunctional phototransmittance‐based structural durability monitoring system is developed. The system consists of an array with four indium gallium zinc oxide (IGZO)‐based phototransistors, a light source at a wavelength of 405 nm through a side‐emitting optical fiber, and pH‐ and Cl‐selective color‐variable membranes. Under illumination at the wavelength of 405 nm at corrosion status, the pH‐ and Cl‐responsive membrane, showing a change in their color, generates a change in the intensity of the transmitted light, which is received by the phototransistor array in the form of an electrical current. I_ds and R (I_ds/I_{pH 12}) are inversely proportional to the pH, which ranges from 10 to 12. When the pH drops from 12 to 10, the magnitude of I_ds and R increases to ≈10³. In the case of Cl detection, I_ds and R (I_ds/I_{Cl 0 wt%}) increase nearly 50 times with an increase in Cl concentration of 0.05 wt%, and when the Cl concentration reaches 0.30 wt%, I_ds and R increase to ≈10³ times greater. This multifunctional colorimetric durability sensing system demonstrates considerable potential as a novel smart‐diagnostic tool of structural durability with high stability, high sensitivity, and multifunction.