Normal-incidence InAs self-assembled quantum-dot infrared photodetectors with a high detectivity

An InAs/AlGaAs quantum-dot infrared photodetector based on bound-to-bound intraband transitions in undoped InAs quantum dots is reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 /spl mu/m. At 77 K and -0.7 V bias, the responsivity was 14 mA/W and the detectivity, D*, was 10/sup 10/ cm/spl middot/Hz/sup 1/2//W.     

All-optical photonic switches using integrated inverted asymmetricFabry-Perot modulators and heterojunction phototransistors

InGaAs/GaAs(100) multiple-quantum-well-based inverted cavity asymmetric Fabry-Perot modulators are vertically integrated with GaAs/AlGaAs heterojunction phototransistors to yield all-optical photonic switches. The photonic switches using `normally on' modulator pixels exhibit an output on-off ratio of 12:1 with internal optical gain of 4 dB. The photonic switches using `normally off' modulator pixels yield similar contrast and gain, but exhibit intrinsic bistable behavior. The inverted cavity modulators employed permit utilizing the transparency of the GaAs substrate at the operating wavelength and offer advantages for fabricating large arrays for optical signal processing     

PVA/Gd2O3@Zno Nanocomposite Films as New Uv-Blockers: Structure and Optical Revelations

Journal of Inorganic and Organometallic Polymers and Materials - Herein we have synthesised Gadolinium oxide doped Zinc oxide (Gd2O3@ZnO) by solution combustion method and incorporated it as a...     

An iterative learning controller with reduced sampling rate for plants with variations of initial states

In this paper a discrete-time iterative learning controller for single input single output systems is presented. The iterative learning controller works with a reduced sampling rate that ensures the reduction of an appropriate norm of the error trajectory from cycle to cycle and can cope with initial state error. Initial state error occurs when the initial state of the system is different from the initial state that is implicitly given by the reference trajectory. If the initial state changes for every learning iteration, then the controller cannot achieve ideal tracking but the error trajectory is bounded. Using two different sample times together with a potentially time variant learning gain improves the controller performance for dealing with initial state error. Simulation examples are presented to show the results of the proposed iterative learning controller with reduced sampling rate.     

Printed, flexible electrochromic displays using interdigitated electrodes

We describe herein some of our initial studies in pursuit of a simple, economical method of mass producing electrochromic displays. The approach we have taken is to print the display on polymer film utilizing commercially available conductive inks in an interdigitated electrode structure with a conductive metal oxide powder, dispersed in a polymer binder, as the electrode surface. A range of electrochromic materials suitable for use with an aqueous gel electrolyte have been explored and examples presented.     

Nanocrystal-semiconductor interface: Atomic-resolution cross-sectional transmission electron microscope study of lead sulfide nanocrystal quantum dots on crystalline silicon

We report on a cross-sectional high resolution transmission electron microscope study of lead sulfide nanocrystal quantum dots （NCQDs） dispersed on electron-transparent silicon nanopillars that enables nearly atomically-resolved simultaneous imaging of the entire composite： the quantum dot, the interfacial region, and the silicon substrate. Considerable richness in the nanocrystal shape and orientation with respect to the substrate lattice is observed. The average NCQD-substrate separation is found to be significantly smaller than the length of the ligands on the NCQDs. Complementary photoluminescence measurements show that light emission from PbS NCQDs on silicon is effectively quenched which we attribute to intrinsic mechanisms of energy and charge transfer from PbS NCQDs to Si.