高容量移动应用的NOR闪存和NAND闪存

高速数据传输网络和多媒体服务的大量部署使得具有更大的存储量成为新型手机和3G手机共有的要素。这些手机的存储量有望超过1Gb，而低端3G手机的存储能力将军少是32Mb。     

Three ways to implement interfacial techniques: application tomeasurements of chromatic dispersion, birefringence, and nonlinearsusceptibilities

Depending on the spectal width of the source illuminating an interferometer, measurement procedures can utilize either the whole interferogram, or only the fringe envelope, or only the fringe quick oscillations. With an ultraband spectrum source, a simplified adaptation of the methods of Fourier transform spectroscopy yields the variations of the test-fiber propagation constant over the whole wavelength-interval of the source. Chromatic dispersion can then be computed from a single interferogram. With narrower spectrum sources, only the fringe envelopes are utilized and yield measurements of mode delay, with application to chromatic and polarization mode dispersion. In this case, however, interferograms at several wavelengths are necessary. With even narrower spectrum sources, the fringe quick oscillations provide measurements of phase shifts, related to changes in the mode propagation constant, when outside perturbations are applied to the test fiber. A direct method for measuring the third-order nonlinear susceptibilities is discussed. In this case the outside perturbation is an intense pump laser field     

Allelopathic effect of phenolic acids from humic solutions on two spruce mycorrhizal fungi:Cenococcum graniforme andLaccaria laccata

The aim of this investigation was to determine the impact ofp-hydroxyacetophenone,p-hydroxybenzoic acid, catechol, and protocatechuic acid on respiration of two spruce mycorrhizal fungi:Laccaria laccata andCenococcum graniforme. These phenols are produced byVaccinium myrtillus,Athyrium filixfemina, andPicea abies, predominant species of spruce forests in the Alps, and they are also present in humic solutions at 10^–10 M or 10^–5 M. Respiration of the two fungi was inhibited by the four phenolic acids, even at concentrations ranging from 10^–5 M to 10^–7 M. These data show phenolic acids from humic solutions have biological activity at extremely low concentrations, suggesting a contribution ofV. myrtillus, A. filixfemina, andP. abies to allelopathic inhibition of mycorrhizal fungi.     

Polymer aqueous solutions as quenching media. II. Ethylene oxide–propylene oxide copolymers

The cooling power of aqueous solutions of ethylene oxide-propylene oxide copolymers are studied with a silver standard sample by using two apparatuses quench with injection and quench with agitation. For temperature T>400°C, the viscosity plays the predominant role; for T<400°C, the cooling is controlled by the polymer precipitation and the cooling rate decreases by lowering the cloud point of the polymer solution. This work demonstrates the possibility of adjusting the cooling curves by taking into account the thermodynamical properties of the polymer.     

An EKV-based high voltage MOSFET model with improved mobility and drift model

An EKV-based high voltage MOSFET model is presented. The intrinsic channel model is derived based on the charge based EKV-formalism. An improved mobility model is used for the modeling of the intrinsic channel to improve the DC characteristics. The model uses second order dependence on the gate bias and an extra parameter for the smoothening of the saturation voltage of the intrinsic drain. An improved drift model [Chauhan YS, Anghel C, Krummenacher F, Ionescu AM, Declercq M, Gillon R, et al. A highly scalable high voltage MOSFET model. In: IEEE European solid-state device research conference (ESSDERC), September 2006. p. 270–3; Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, et al. Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron 2006;50(11–12):1801–13] is used for the modeling of the drift region, which gives smoother transition on output characteristics and also models well the quasi-saturation region of high voltage MOSFETs. First, the model is validated on the numerical device simulation of the VDMOS transistor and then, on the measured characteristics of the SOI-LDMOS transistor. The accuracy of the model is better than our previous model [Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, et al. Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron 2006;50(11–12):1801–13] especially in the quasi-saturation region of output characteristics.     

Structural evolution of alumina-γ-aluminium oxynitride composites during high-temperature compression creep

TEM studies of Al₂O₃--AION composites show the presence of precipitates in the -AION phase, due to a partial decomposition of this metastable phase formed during heat treatment. Thermal treatment (1650°C) has no effect on the microstructure, while compressive creep deformation (1650°C, 10–30 MPa) leads to a decrease of the -AION content. This phase decomposes, probably into alumina or alumina-poor AION. The precipitation process can be activated by the presence of dislocations, and is associated with a slight increase in strain rate during creep.     

The correlation between the thermoelectric properties and stoichiometry in the boron carbide phase B4C-B10.5C

Electrical conductivity, thermoelectrical power and thermal conductivity measurements on boron carbide samples show that the electrical conductivity follows the small polaron hopping theory and that thermal conductivity occurs by phonon diffusion. The evolution of these properties with carbon content illustrates the particular role played by the 13.3 at% C compound in the phase homogeneity range B_10.5C to B₄C. The value of the figure of merit (0.85×10^–3 K at 1250 K) proves that this particular boron carbide compound could be a very interesting candidate material for high-temperature thermoelectrical conversion.     

Pressureless sintering of boron carbide with an addition of polycarbosilane

Boron carbide B _x C (x 4) is pressureless sintered with an addition of both polycarbosilane and a small amount of phenolic resin. After testing many green mixtures, it was found that it was necessary to have a minimal addition of carbon which could denxydize the B _x C and also a second phase (SiC in this work) which could act in inhibiting grain coarsening. The resulting B _x C ceramics have high relative density ( 92% theoretical density) and contain no free carbon and a small amount of SiC (about 5 wt%).