A process model for active brazing of ceramics: Part II Optimization of brazing conditions and joint properties

In the present investigation, the process model developed in Part I has been applied to evaluate the microstructure and strength evolution during active brazing of ceramics. As a starting point, reaction-layer growth is assumed to occur isothermally with no restrictions in the supply of reactive element. Different kinds of diagrams are then constructed to show how specific process variables (e.g. the heating and cooling period, the limiting layer thickness, and the diffusion mechanism) affect the growth kinetics. It is concluded that the key to improved joint properties lies in control of the reaction-layer thickness through optimization of the brazing conditions, and an illustration of this is given. This revised version was published online in November 2006 with corrections to the Cover Date.     

An 8-bit, 200 MSPS Folding and Interpolating ADC

An 8-bit, 200 MSPS folding and interpolating analog-to-digitalconverter, ADC, has been implemented in a 1.2 µmBiCMOS-process. It achieves 7.5 effective bits with a power dissipationof 575mW. The active area is 4mm². The implementationand measured results are presented. A simple analytical modelfor the interpolation-induced nonlinearity in a folding and interpolatingADC using sinusoidal folding is presented. The bowing of thereference ladder due to interaction with the input stages isanalyzed, and analytical models are derived.     

Treatment of Humic Waters By Ozone

Two different generators for ozone were tested, a traditional electrical discharge generator and a generator based upon UV–irradiation of air at 150–180 nm. It was demonstrated that the traditional generator gave slightly higher reductions in levels of color for equivalent ozone dosages. Both gases affected the molecular weight distribution in the way that the bigger molecules were broken down to smaller ones. No significant difference between the molecular weight reduction efficiency of the gases was found.     

Galanin-receptor ligand M40 peptide distinguishes between putative galanin-receptor subtypes

The galanin-receptor ligand M40 [galanin-(1-12)-Pro3-(Ala-Leu)2-Ala amide] binds with high affinity to [mono[125I]iodo-Tyr26]galanin-binding sites in hippocampal, hypothalamic, and spinal cord membranes and in membranes from Rin m5F rat insulinoma cells (IC50 = 3-15 nM). Receptor autoradiographic studies show that M40 (1 microM) displaces [mono[125I]iodo-Tyr26]galanin from binding sites in the hippocampus, hypothalamus, and spinal cord. In the brain, M40 acts as a potent galanin-receptor antagonist: M40, in doses comparable to that of galanin, antagonizes the stimulatory effects of galanin on feeding, and it blocks the galaninergic inhibition of the scopolamine-induced acetylcholine release in the ventral hippocampus in vivo. In contrast, M40 completely fails to antagonize both the galanin-mediated inhibition of the glucose-induced insulin release in isolated mouse pancreatic islets and the inhibitory effects of galanin on the forskolin-stimulated accumulation of 3',5'-cAMP in Rin m5F cells; instead M40 is a weak agonist at the galanin receptors in these two systems. M40 acts as a weak antagonist of galanin in the spinal flexor reflex model. These results suggest that at least two subtypes of the galanin receptor may exist. Hypothalamic and hippocampal galanin receptors represent a putative central galanin-receptor subtype (GL-1-receptor) that is blocked by M40. The pancreatic galanin receptor may represent another subtype (GL-2-receptor) that recognizes M40, but as a weak agonist. The galanin receptors in the spinal cord occupy an intermediate position between these two putative subtypes.     

Activated dissociative chemisorption of methane on Ni(100): a direct mechanism under thermal conditions?

The dissociative chemisorption of methane on a Ni(100) single crystal has been studied under thermal conditions as a function of pressure and temperature. The initial sticking coefficient was measured in the pressure range of 0.010–7.0 mbar at temperatures ranging from 375 to 500 K. A strong pressure dependence was observed, consistent with a direct dissociation mechanism under these thermal conditions. This was further confirmed by experiments where the gas at a low pressure was heated by a thermal finger facing the crystal surface. With the thermal finger at the same temperature as the surface, it was possible to ensure that the methane was fully equilibrated to the crystal and an activation energy of 59±1.5 kJ/mol was determined under isothermal conditions.     

Fe calculations of stress fields from cracks located at the fusion line of weldments

This paper investigates the stress fields for a crack located at the fusion line of a weldment. The strength mis-matching and the size of the HAZ were varied, and the corresponding distribution of the maximum principal stress was examined. The weld metal strength was globally overmatched with respect to the base material, but locally over- and undermatched with respect to the heat affected zone. Three cases of mis-match were compared, and it was found that reducing the strength of the HAZ lowered the maximum principal stresses.     

On the solubility of aluminum in cryolitic melts

The solubility of aluminum in NaF-AlF₃-Al₂O₃ melts with various additives was found to increase with increasing NaF/AlF₃ molar ratio (CR) and increasing temperature and to decrease with additions of A1₂O₃, CaF₂, MgF₂, and LiF to the melts. With the use of literature data for the activities of NaF and A1F₃ in cryolitic melts, three dissolution reaction models were found to give a good fit to the experimental solubility data. According to the most probable of these models the total concentration of dissolved aluminum (aluminum and sodium species) is given by c_Al = c_Na(diss) + c_AlF2- + c_Al2F3- + c_Al3F4- + c_Al4F5- In NaF rich melts, aluminum will dominantly dissolve as sodium, while at cryolite ratios commonly used in aluminum electrowinning (CR = 2.25 to 2.7) the AlF _-2 ^- -ion is the predominant dissolved metal species. Other species (A1₂F₃ ^-, A1₃F₄-, A1₄F₅-) were found to be of some significance only in melts with high excess A1F₃ (CR < 2).     

Passivation of the aluminium cathode during deposition of aluminium from aluminium chloride-sodium chloride melts

The kinetics of aluminium deposition from NaCl-AlCl₃ melts (c_AlCl3 < 10 mol%) contained in alumina crucibles was studied by linear sweep voltammetry and potential step amperometry at temperatures around 820°C. At low concentrations (c_AlCl3 < 0.4 mol%) the reduction of AlCl₃ on liquid aluminium has been found to be diffusion controlled. At higher concentrations a passivation of the aluminium electrode was observed during the deposition reaction. The passivation appears to be caused by precipitation of alumina from supersaturated melt in the diffusion layer at the aluminium cathode.