The effect of annealing on the properties of Ga2O3 anodic films

The effect of annealing and oxygen plasma on the electrical characteristics of gallium oxide films has been investigated. Ga₂O₃ films with thicknesses of 200–300 nm were formed by the anodic oxidation of n-GaAs wafers with the donor concentration N _d = (1–2) × 10¹⁶ cm⁻³. It is shown that, after annealing at 900°C for 30 min, the gallium arsenide films contain only the β Ga₂O₃ phase. The effect of the duration of oxygen plasma treatment prior to annealing on the nucleation of β-phase crystallites with different orientations has been studied. It has been established that the electrical conductivity of the Ga₂O₃ films can be managed by annealing and variation in the duration of oxygen plasma treatment. It is shown that the response of the V/Ni-GaAs-Ga₂O₃-V/Ni structure to a mixture exhaled by a person depends on the value and sign of the potential on the control electrode.     

Properties of TiO2 films on silicon substrate

Influence of the substrate material and the effect of oxygen plasma on the microprofile and electrical properties of TiO₂ films deposited by radio-frequency magnetron sputtering are studied. It is shown that the most continuous films with the smallest roughness are obtained when deposited onto silicon substrates. The change in the capacitance-voltage and conductance-voltage characteristics of the structures upon their exposure to oxygen plasma is accounted for by the diffusion of oxygen atoms across the titanium-dioxide film and by the appearance of a SiO₂ layer at the Si-TiO₂ interface.     

Effect of annealing in argon on the properties of thermally deposited gallium-oxide films

The effect of the annealing temperature on the I–V, C–I, and G–V characteristics and transparency of gallium-oxide films is investigated. The films are fabricated by the thermal evaporation of Ga₂O₃ powder on n-GaAs wafers. It is shown that the films which are amorphous after deposition crystallize upon annealing at temperatures T _an ≥ 800°C. The electrical characteristics and photoresponse of the V/Ni-GaAs-GaAs-Ga _x O _y -V/Ni samples to visible radiation depend on the structure and phase composition of the films.     

Solid-state image converters on the basis of the GaAs/ZnS structures

Semiconductors - Emission-voltage characteristics and frequency dependences of the luminescence intensity of electroluminescent capacitors on the basis of the ZnS:(Cu,Al) phosphor are studied. The...     

Joint processing of surface and underground microseismic monitoring data in hard mineral mining

The article discusses optimization of microseismic monitoring in hard mineral mining. A procedure has been developed to estimate accuracy of positioning of seismic event hypocenters. The advantage of combination observation system with distributed underground receiving antennas and additional sensors installed at a distance from a productive seam plane is illustrated. The obtained results are important for optimizing observation systems and improving efficiency of microseismic monitoring in hard mineral mining.     

Effect of oxygen plasma on the properties of tantalum oxide films

The effect of oxygen plasma on the leakage current, permittivity, and the dielectric loss tangent of Ta₂O₅ thin layers (300–400 nm) is studied. It is suggested to treat tantalum oxide films in oxygen plasma to control their electrical and dielectric characteristics.