Quantitative Analysis of Valley–Orbit Coupling in Germanium Doped with Group-V Donors

Semiconductors - The wave functions of electrons localized at P, As, and Sb shallow donors in Ge are calculated in the envelope function approximation taking into account valley–orbit...     

On the Intracenter Relaxation of Shallow Antimony Donors in Strained Germanium

Semiconductors - Long-wavelength acoustic phonon-assisted relaxation rates for the excited 1s(T), 2p0, 2s, 3p0, 2p±, 4p0, and 3p± states of antimony donors in a germanium crystal are...     

Terahertz emission at impurity electrical breakdown in Si(Li)

Terahertz electroluminescence caused by impurity-induced breakdown in lithium-doped silicon crystals is studied. The spectrum of the terahertz emission exhibits lines corresponding to intracenter electronic transitions between excited states of the impurity and sublevels of the ground state of the lithium donor. The spectrum also shows a background signal, which, apparently, is a manifestation of the effects due to heating at electric excitation.     

Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission

Semiconductors - The results of experiments aimed at the observation of split 1s states in Mg-doped Si are reported. From the results, it is possible to determine the chemical shift and exchange...     

Relaxation of the Excited States of Arsenic in Strained Germanium

Semiconductors - The relaxation times of the lower p states of the arsenic donor in a germanium crystal strained along the [111] crystallographic direction are studied. Measurements are performed...     

Frequency Tuning of Terahertz Stimulated Emission under the Intracenter Optical Excitation of Uniaxially Stressed Si:Bi

Semiconductors - The results of experimental and theoretical investigations of terahertz-emission-spectrum tuning by means of uniaxial stress of a silicon crystal doped with shallow bismuth donors...     

On the Possibility of Ramsey Interference in Germanium Doped with Shallow Impurities

Semiconductors - The dynamics of the formation and decay of coherent states of shallow impurity centers in crystalline germanium resonantly excited by a pair of laser pulses, following one another...     

Fluoride and tellurite glasses for thin-film IR viewers

We have studied optical characteristics of Er³⁺-, Ho³⁺-, and Yb³⁺-doped ZBLAN and TWL glasses. Their luminescence was excited at wavelengths of 975, 378, and 449 nm. The 975-nm radiation excited the Yb³⁺ (² F _7/2 → ² F _5/2), and the excitation energy was then transferred to the Er³⁺ and Ho³⁺. The short-wavelength excitation led to cross-relaxation processes: (⁴ F _7/2, ² F _7/2) → (⁴ I _11/2, ² F _5/2) for the Er³⁺-Yb³⁺ pair (378 nm) and (⁵ F ₃, ² F _7/2) → (⁵ I ₅, ² F _5/2) for the Ho³⁺-Yb³⁺ (449 nm). At the three excitation wavelengths, we observed green luminescence in the range 525–550 nm. Using the glasses studied here, we prepared thin colorless lacquer films potentially attractive for hidden information recording and hidden labeling of various objects and materials.