Microscopic simulation of electronic noise in semiconductormaterials and devices

We present a microscopic interpretation of electronic noise in semiconductor materials and two-terminal devices. The theory is based on Monte Carlo simulations of the carrier motion self-consistently coupled with a Poisson solver. Current and voltage noise operations are applied and their respective representations discussed. As application we consider the cases of homogeneous materials, resistors, n⁺nn ⁺ structures, and Schottky-barrier diodes. Phenomena associated with coupling between fluctuations in carrier velocity and self-consistent electric field are quantitatively investigated for the first time. At increasing applied fields hot-carrier effects are found to be of relevant importance in all the cases considered here. As a general result, noise spectroscopy is found to be a source of valuable information to investigate and characterize transport properties of semiconductor materials and devices     

A biased percolation model for the analysis of electronic-device degradation

The biased percolation model is proposed for investigating device degradation and failure associated with the generation of defects due to local Joule heating. The degradation processes of a thin conducting or semiconducting film is monitored by a set of relevant indicators, such as: the evolution of damage pattern, the current distribution, the film resistance and its fluctuations, the defect concentration, the film lifetime, etc. The conductor-insulator (CI) and conductor-superconductor (CS) like degradation processes are considered. The results can be used to propose non-destructive indicators to test the reliability of samples and to interpret the corresponding experiments.     

Discordance Rate of HER2 Status in Primary Gastric Carcinomas and Synchronous Lymph Node Metastases: A Multicenter Retrospective Analysis

Background: The assessment of human epidermal growth factor receptor 2 (HER2) gene amplification is essential in order to identify those patients affected by advanced gastric cancer who may benefit from Trastuzumab targeted therapy. Materials and Methods: With the aim to investigate the concordance rate in HER2 status between primary gastric carcinoma (GC) and synchronous lymphnode metastases, we investigated HER2 status in a cohort of 108 surgical formalin-fixed paraffin-embedded specimens of GC and matched synchronous metastatic lymph nodes collected from three different units of Anatomic Pathology in southern of Italy. Fleiss-Cohen weighted k statistics were used to assess the concordance rate of HER2 status. Results: HER2 amplification was observed in 17% of primary GCs and the overall concordance rate with corresponding nodal metastases was 90.74%. Changes in HER2 status between primary GC and matched synchronous metastases were evidenced in 10 (9.26%) cases. Of these, 6 cases were HER2 amplified in the primary GC and not amplified in the metastases, while 4 were HER2 not amplified in the primary tumour and amplified in the lymph node metastases. Conclusions: Although at present the simultaneous determination of HER2 in advanced gastric cancer and corresponding metastatic lymph nodes is not mandatory, the possibility that the synchronous metastases of GC have a different HER2 status from that of the primary tumour is of remarkable significance; Indeed this may have influence on the therapeutic management and prognosis of the patients.     

Resilience: An Evolutionary Approach to Spatial Economic Systems

The concept of resilience has received a great deal of attention in the past decades. Starting from the first fundamental definitions offered by Holling, Pimms and Perrings in an economic-ecological modeling context, the present paper explores the evolution of the resilience concept—as well as related different measures—in both a continuous and discrete time setting.From this perspective, the paper explores the relevance of the resilience concept in socio-economic systems, by focussing the attention on the relationships among resilience, transition dynamics and lock-in effects, in particular in the light of the dynamics of technological innovation diffusion and adaptive behaviour of firms. In this framework we will describe an empirical application, in which the resilience and dynamics of the West-German labour market will be investigated. This empirical illustration is offered by making use of an algorithm constructed for detecting Lyapunov exponents, so as to classify the resilience among employment sectors in our case study.     

Evaluation of virtual fixtures for a robot programming by demonstration interface

We investigate the effectiveness of several types of virtual fixtures in a robot programming by demonstration interface. We show that while all types of virtual fixtures examined yield a significant reduction in the number of errors in tight tolerance peg-in-hole tasks, color and sound fixtures generally outperform a tactile fixture in terms of both execution time of successful trials and error rate. We have found also that when users perceive that the task is very difficult but the system is providing some help by means of a virtual fixture, they tend to spend more time trying to achieve a successful task execution. Thus, for difficult tasks the benefits of virtual fixturing are better reflected in a reduction of the error rate than in a decreased execution time. We conjecture that these trends are related to the limitations of currently available interfaces for human-robot interaction through virtual environments and to the different strategies adopted by the users to cope with such limitations in high-accuracy tasks.     

Network Analysis of Commuting Flows: A Comparative Static Approach to German Data

The analysis of complex networks has recently received considerable attention. The work by Albert and Barabási presented a research challenge to network analysis, that is, growth of the network. The present paper offers a network analysis of the spatial commuting network in Germany. First, we study the spatial evolution of the commuting network over time. Secondly, we compare two spatial interaction model (SIM) specifications, in order to replicate the actual network structure. Our findings suggest that the commuting network appeared to become more dense and clustered, while the SIMs seem to require more sophisticated specifications, in order to replicate such a connectivity structure.     

Connectivity and concentration in airline networks: a complexity analysis of Lufthansa's network

Information, communication and transport networks have always been in a state of flux, while they also influence each other. Extensive research efforts have been made to investigate the dynamics in the structure and use of networks, for example, by means of network geometries, Small-World effects and Scale-Free phenomena. We will illustrate these new developments on the basis of airline network evolution. Using Lufthansa's networks as an example, this paper aims to show the empirical relevance of various network indicators – such as connectivity and concentration – for understanding changing patterns in airline network configurations. After an extensive discussion of various statistical results, a decision-aid method, viz. multi-criteria analysis, is used to investigate the robustness of our findings. The results highlight the actual strategic choices made by Lufthansa for its own network, as well in combination with its partners in Star Alliance.     

A compact double-gate MOSFET model comprising quantum-mechanicaland nonstatic effects

In this work, we investigate the electrical properties of the Double-Gate MOSFET (DG-MOSFET), which turn out to be very promising for device miniaturization below 0.1 μm. A compact model which accounts for charge quantization within the channel, Fermi statistics, and nonstatic effects in the transport model is worked out. The main results of this investigation are: (1) the ideality factor in subthreshold is equal to unity, i.e., the slope of the turn-on characteristic is 60 mV/decade at room temperature; (2) the drain-induced barrier lowering is minimized by the shielding effect of the double gate, which allows us to reduce the channel length below 30 nm; and (3) the device transconductance per unit width is maximized by the combination of the double gate and by a strong velocity overshoot which occurs in response to the sudden variation of the electric field at the source end of the channel, and which can be further strengthened near the drain in view of the short device length. As a result, a sustained electron velocity of nearly twice the saturation velocity is achievable. The above results prove that the potential performance advantages of the double-gate device architecture may be worth the development effort     

Effect of itaconic acid on the wet scrub resistance of highly pigmented paints for architectural coatings

This study investigates the influence of carboxylic monomers, such as itaconic acid (IA), on the colloidal properties of the latexes made by semi-continuous emulsion copolymerization of styrene (STy) with n-butyl acrylate (BA). A number of copolymerization runs were carried out with different IA concentrations. The effect of functional monomer on the overall conversion, the colloidal properties of the latexes, and the distribution of the carboxylic groups (buried, particle surface and aqueous phase) were examined. The carboxylic groups present in the latexes were analyzed using conductimetric and potentiometric titrations. The behavior of the IA on the wet scrub resistance of highly pigmented paints for architectural coatings was examined and correlated with the distribution of the carboxylic groups. The results obtained showed that the properties of highly pigmented paints are greatly dependent on the amount and distribution of the carboxylic groups. The carboxylic acid distributed in the aqueous phase has a strong influence on the wet scrub resistance and on the characteristics of the final products.     

Direct Monte Carlo simulation of hot-carrier conductivity

We present a Monte Carlo procedure which, by including the mechanism of generation and recombination from impurity centers, enables us to calculate directly from the simulation the field dependent conductivity for the first time. The reliability of the theoretical model has been checked by comparing numerical results with experiments provided by the Montpellier group and performed on p-Si at different acceptor concentrations and temperatures.