Electrical Breakdown Properties and Space Charge Formation in High Temperature Region in Ultraviolet Ray Irradiated PVC

Polyvinyl chloride (PVC) is the most popular insulating material for electric wiring instruments. However, an exothermic reaction above 150 °C may cause deterioration of the insulating properties of PVC. Therefore, it is important to clarify the heat degradation in PVC, not only to investigate the ignition of electrical wiring products but also to use electrical products safely. It is known that ultraviolet (UV) irradiation causes chemical deterioration of PVC and an increase in its conductivity. Generally, it has been thought that the electrical breakdown properties, electrical conduction, and insulating performance are affected by space charge accumulation in an insulating material. A high temperature pulsed electroacoustic (PEA) system usable up to 250 °C has been developed, and the PEA system can measure the space charge distribution and conduction current in the high temperature range simultaneously. In this investigation, the space charge distribution and conduction current were measured up to electrical breakdown in a non‐UV irradiated sample (normal PVC) and in 353 nm and 253 nm UV‐irradiated PVC samples in the range from room temperature to 200 °C in a DC electric field. In the short wavelength UV irradiated PVC sample (253 nm, 300 h), a deterioration of breakdown strength at 90 °C to 150 °C and negative packet‐like charges were observed at 60 °C and 100 °C, a positive charge accumulated in front of both the anode and cathode above 90 °C, and a higher electric field near the cathode side because the positive charge of the cathode side was greater.     

Novel method for simultaneous formation of wires and vias of a printed circuit board using nanoporous body

A new type of a flexible printed circuit board with landless vias is developed using a novel method called interconnection via nanoporous structure (INPS). This method can make wires and vias of the printed circuit board simultaneously by a single photo-exposure process. A new photo-induced selective plating method was used to impregnate a nanoporous substrate with copper, and a new photomask was designed, which constitutes of a completely vacant large hole for via and aggregation patterns of very fine holes for wire. Because of the simple process, the INPS board is characterized by landless vias and very fine circuit. Owing to the structure, it is also characterized by flexibility and detachable wires.     

Super-multi-fibre PLC connector utilising angled connection between PLC and tens of fibres

A novel super-multi-fibre planar lightwave circuit (PLC) connector, designed to connect tens of optical fibres and a PLC for super-multichannel PLC-based optical modules with a receptacle interface, is proposed. This connector employs an angled connection instead of a PC connection. A 0.127 mm pitch 32-fibre connector is also demonstrated, which exhibits low connection and high return losses.     

Mobile robot control by neural networks using self-supervisedlearning

A reinforcement learning algorithm based on supervised learning is described. It uses associative search to discover and learn actions that make the system perform a desired task. One problem with associative search is that the system's actions are often inconsistent. In the searching process, the system's actions are always decided stochastically, so the system cannot perform learned actions more than once, even if they have been determined to be suitable actions for the desired task. To solve this problem, a neural network that can predict an evaluation of an action and control the influence of the stochastic element is used. Results from computer simulations using the algorithms to control a mobile robot are described     

Hot-carrier degradation of submicrometer p-MOSFETs withthermal/LPCVD composite oxide

It is shown that while gate oxides containing thermal/LPCVD composite oxide have lower defect densities than gates using only thermal oxides, they are more susceptible to hot-carrier degradation. The hot-carrier-induced degradation of composite oxides is worse in p-channel MOSFETs than in n-channel MOSFETs. This sensitivity of p-channel MOSFETs is caused by higher electron trapping levels in LPCVD oxides. For 150-Å gate technology, the hot-carrier-degradation resistance of thermal/LPCVD composite gate oxides with a 70-Å or thicker thermal oxide layer approaches that of high-quality pure thermal oxide     

Isotachophoretic analysis of surfactants

The qualitative and quantitative determination of anionic surfactants (sodium and lithium alkylsulfate, sodium dodecylbenzenesulfonate, sodium di-2-ethylhexyl sulfosuccinate, sodium and lithium perfluoroalkylcarboxylate, and lithium perfluorooctanesulfonate) were investigated by a capillary tube isotachophoresis using a potential gradient detector. The leading electrolyte solution was the mixture of acetonitrile and aqueous solution of histidine buffer containing calcium chloride. The terminating electrolyte solution was the aqueous solution of sodium octanoate. These electrolytes were effective for the analysis of the mixtures of strongly acidic surfactants.     

Evaluation of the wettability of spherical cement particle surfaces using penetration rate method

The wettability of cement particles is related to the fluidity of cement paste. This paper describes the mechanism of the higher fluidity imparted by the spherical cement particles in light of their wettability. In addition, the effects of gypsum on the wettability were also studied. This study has shown the following: (1) The weight of water and water-reducing agent solution penetrating the spherical cement powder bed is 24-150% higher than that for the ordinary Portland cement powder bed. This results in the improvement of the wettability of the particle surfaces of spherical cement. The high wettability of spherical cement contributes to its high fluidity. (2) The presence of many fine gypsum particles on the spherical cement particle surface reduces the wettability. (3) To prepare spherical cement, the optimum amount of gypsum added is determined by the acceleration of the formation of spherical particles and the wettability of particle surfaces.     

Growth of β-Alumina (Na2O · 11Al2O3) Single Crystals by the Flux Method

The crystal-growth process and growth conditions of β-alumina (Na₂O · Al₂O₃) were investigated using the Na₂B₄O₇-Na₃AlF₆ flux method. β-Alumina (electric fusion brick) was used as both nutrient and seed. Weight loss of the flux varied widely for various runs: ≅ 10 wt% of flux evaporated at 100 h, ≅ 17 wt% at 150 h, and 43 wt% at 600 h. When β-alumina crystal was grown, only 20 wt% Na₂B₄O₇ was added to the Na₃AlF₆ flux. The linear growth rates of the β-alumina single crystal grown by an Na₃AlF₆-20 wt% Na₂B₄O₇ flux method at 1040°C and Δ t = 18°C were ≅ 1.0 × 10⁻³ mm/h ( a face) and ≅0.3 × 10⁻³ mm/h ( c face). The β-alumina single crystals grown were bounded by only c [001] and a [100] and were colorless and transparent.     

Single-crystal growth and characterization of Cu2O and CuO

We have prepared a large number of crystals of cuprous oxide (Cu2O) by various procedures. Photoluminescence spectra of these crystals were studied to examine the concentration of defects, especially copper vacancy VCu to seek favourable conditions for growing Cu2O crystal. High-quality single crystals of Cu2O were prepared by the floating-zone melting method in air. Several synthetic crystals (specimens FA, FZ and GZ) and also a natural crystal were studied by X-ray analysis, inductively coupled plasma spectroscopy analysis, optical absorption, photoluminescence, photoconductivity and cyclotron resonance absorption, photoluminescence, photoconductivity and cyclotron resonance absorption to characterize their optical and electrical qualities. The best values of mobility and scattering time of photocarriers at T = 4.2 K are estimated to be h1.8 × 105 cm2 V–1 s–1 and h60 ps for positive holes, and 1.3 × 105 cm2 V–1 s–1 and 70 ps for electrons in Cu2O. Further, we report preliminary experimental results on transport property of crystals also of cupric oxide (CuO) purified by the floating-zone melting method.