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Russian Microelectronics - The recently developed nanomaterials and their production technologies as intellectual property objects (IPOs) are considered. The role of the informational-analytical...  相似文献   
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Russian Microelectronics - The creation of new types of radio-absorbing materials (RAMs) is relevant due to the intensive development of microwave radio electronic devices, their increasing power,...  相似文献   
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Russian Microelectronics - Triple FeCoNi nanoparticles, distributed and stabilized in the carbon matrix of FeCoNi/C metal-carbon nanocomposites, are synthesized. The nanocomposites are synthesized...  相似文献   
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New materials based on carbon nanocrystalline material and metal carbon nanocomposites, which have specific properties and are promising for the use in the fabrication of electron and electrochemical sensor devices and catalysts, have been suggested for the development of electronics.  相似文献   
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The results of creating a system of models and algorithms for calculating the parameters of technological processes for obtaining materials of micro- and nanoelectronics and designing equipment are considered. It is shown that the distinctive feature of the teaching methods for special technological courses in electronic engineering materials is the construction of courses by analogy with the technological processes for obtaining materials for electronics: from a bulk single crystal to instrumental structures, whose dimensions do not currently exceed several tens of nanometers. A scientific model approach to the solution of technological problems was formed in the study of heat and mass transfer processes, which together with the processes of interaction in liquids and gas, taking heterogeneous reactions into account, are the theoretical basis of the technology of electronic engineering materials. The possibilities of physical and mathematical modeling are compared. Approaches to create mathematical models of the growth processes of single crystals of semiconductors, epitaxial layers, and heterostructures are considered and the possibilities of their practical use are determined. It is determined that the ideas proposed by V.V. Krapukhin at the initial stages of training specialists in the field of the technology of electronic material and developed by his students identified the possibility of training several generations of qualified specialists.  相似文献   
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We describe a method to study the structure of semiconductor autoepitaxial layers grown in the form of closed cylinders on the external side surface of hollow cylindrical single-crystal substrates. We compare the values of dislocation density in the structure of nonplanar layers obtained by single-crystal X-ray diffraction analysis (measurements of rocking curves) and by the etch pit method in the [111] plane. The results of singlecrystal X-ray diffraction analysis of nonplanar autoepitaxial silicon layers are shown to be reliable.  相似文献   
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Russian Microelectronics - Modification of boron-carbon nanotubes (BCNTs) by functional groups is an urgent task in relation to the intensive development of the nanoindustry, in particular, nano-...  相似文献   
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The surface tension of liquid francium is evaluated in a wide temperature range, from its melting point to 800 K, using the correlation between the surface tension of alkali metals (full electronic analogs) and the universal parameter tan in Prikhod'ko's system of unpolarized ionic radii. The credibility of the surface tension data for liquid francium is assessed. The approach used to evaluate the surface tension of Fr is highly reliable because each quantity in the fundamental theoretical relation is determined independently.  相似文献   
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