Impact of Mole Fractions due to Work Function Variability (WFV) of Metal Gate on Electrical Parameters in Strained SOI-FinFET

In the recent sub-20 nm technology node, the process variability issues have become a major problem for scaling of MOS devices. We present a design for a strained Si/SiGe FinFET on an insulator using a 3D TCAD simulator. The impact of metal gate work function variability (WFV) on electrical parameters is studied. Such impact of WFV for different mole fractions (x) of the SiGe layer in a strained SOI-FinFET with varying grain size is presented. The results show that as the mole fraction is increased, the variability in threshold voltage (σVT) and off current (σIoff) is decreased; while, the variability of on-current (σIon) is increased. A notable observation is the distribution of electrical parameters approaches a normal distribution for smaller grain sizes.     

Effect of Temperature on Reliability Issues of Ferroelectric Dopant Segregated Schottky Barrier Tunnel Field Effect Transistor (Fe DS-SBTFET)

This paper addresses reliability issues associated with temperature of Ferroelectric Dopant Segregated Schottky Barrier Tunnel Field Effect Transistor (Fe DS-SBTFET). The simulated results are compared with Dopant Segregated Schottky Barrier TFET (DS-SBTFET). This is achieved by varying the operating temperature from 300 to 500 K. DC parameters such as I_ON/I_OFF ratio, drain current characteristics and subthreshold swing (SS) for a range of temperature have been highlighted. Moreover, the influence of temperature on various RF figure of merits such as gate capacitance (C_GG), intrinsic delay, cutoff frequency (f_T) etc. have been investigated. The device linearity has been analyzed by considering the effect of temperature variation on linearity parameters like g_m2, g_m3, 1-dB compression point, VIP₂, VIP₃ and IIP₃. The device characteristics get upgraded by the increase in cut-off frequency and reduction in intrinsic delay at elevated temperature.

     

Optimization of a Hetero-Structure Vertical Tunnel FET for Enhanced Electrical Performance and Effects of Temperature Variation on RF/Linearity Parameters

Silicon - A new hetero-structure vertical tunnel field effect transistor is proposed and investigated using Sentaurus Technology Computer-aided Design simulation. Since the direction of the gate...     

Responses of Human Cells to PAH-Induced DNA Damage

Benzo[ a ]pyrene (B[ a ]P) and dibenzo[ a,l ]pyrene (DB[ a,l ]P) induce cytochrome P450 (CYP) CYP1A1 and CYP1B1, which metabolize these polycyclic aromatic hydrocarbons (PAHs) into DNA-binding species. In order to detail roles of CYP1A1 and CYP1B1 in activation of DB[ a,l ]P to the diol epoxide, we here report the inhibition of CYP1A1 in human MCF-7 cells with phosphorodiamidate morpholino antisense oligomers (morpholinos). PAH-DNA adduct formation was also determined after treatment with morpholinos and B[ a ]P or DB[ a,l ]P. p53 is involved in DNA repair, cell cycle arrest, and apoptosis. Cells with normal p53 protein arrest in the G1 phase of the cell cycle on exposure to DNA-damaging agents (presumably allowing the cell sufficient time to repair damaged DNA prior to replication). Previous studies in human MCF-7 cells indicate that cells with PAH-DNA adducts escape cell cycle arrest and accumulate in the S phase. In the present study the effect of PAH-DNA adducts on the cell cycle were observed in human diploid fibroblasts (HDF). We found that treatment of HDF with the diol epoxide of DB[ a,l ]P causes cell cycle arrest in G 1 . An increase in DNA adduct formation with increase in concentration of dibenzo[ a,l ]pyrene diol epoxide {( m )- anti -DB[ a,l ]PDE} was also observed.     

Enrichment of H(2)(17)O from tap water, characterization of the enriched water, and properties of several (17)O-labeled compounds

A low-abundance form of water, H(2)(17)O, was enriched from 0.04% to ～90% by slow evaporation and fractional distillation of tap water. The density and refractive index for H(2)(17)O are reported. Gas chromatography-mass spectrometry (GC-MS) of (16)O- and (17)O-1-hexanols and their trimethyl silyl ethers and of (16)O- and (17)O-hexamethyl disiloxanes was used to determine the percentage of (17)O enrichment in the H(2)(17)O. Furthermore, the chemical shifts of labeled and nonlabeled water dissolved in CDCl(3) differed sufficiently that we could verify the enrichment of H(2)(17)O. (17)O hexanol was synthesized by the reaction of iodohexane with Na(17)OH. (17)O-Labeled trimethylsilanol and (17)O-labeled hexamethyldisiloxane were prepared by the reaction of H(2)(17)O with bis(trimethylsilyl)trifluoroacetamide (BSTFA). To generate standards for (17)O NMR, H(2)(17)O(2), and (17)O camphor were prepared. H(2)(17)O was electrolyzed to form (17)O-labeled hydrogen peroxide which was quantified using two colorimetric assays. (17)O-Labeled camphor was prepared by exchanging the ketone oxygen of camphor using H(2)(17)O. The (17)O-labeled compounds were characterized using (17)O, (1)H, and (13)C NMR and GC-MS. While we were characterizing the labeled camphor, we also detected an unexpected oxygen exchange reaction of primary alcohols, catalyzed by electrophilic ketones such as camphor. The reaction is a displacement of the alcohol OH group by water. This is an example of the usefulness of (17)O NMR in the study of a reaction mechanism that has not been noticed previously.     

Study on induced work-function variation of titanium metal gate on various electrical parameters for delta-doped layer germanium source vertical tunnel FET

Journal of Computational Electronics - Workfunction variation (WFV) in a high-k/titanium metal gate stack vertical tunnel field-effect transistor (FET) with a delta-doped layer in the germanium...     

TFET on Selective Buried Oxide (SELBOX) Substrate with Improved ION/IOFF Ratio and Reduced Ambipolar Current

Silicon - This paper proposes a new structure for tunnel field effect transistor on a selective buried oxide (SELBOX) substrate. An extensive simulation study and a comparative performance analysis...     

Source-Drain Junction Engineering Schottky Barrier MOSFETs and their Mixed Mode Application

Silicon - In this paper, a new structure for a silicon on insulator Schottky barrier MOSFET (SOI SB-MOSFET) has been proposed. The simulated device is calibrated with experimental result. Here...     

Identifying Malicious Secondary User Presence Within Primary User Range in Cognitive Radio Networks

Wireless Personal Communications - Cognitive Radio (CR) Network is a wireless communication technology, in which a detection device smartly detects occupied and unoccupied channels. During traffic,...