Influence of Carrier Mobility and Interface Trap States on the Transfer and Output Characteristics of Organic Thin Film Transistors

We have used two dimensional drift diffusion simulations to calculate the electrical properties of bottom contact pentacene based organic thin film transistor, taking into account field-dependent mobility and interface or bulk trap states. In order to derive from basic principles the transport properties of the organic semiconductor we have developed a Monte Carlo simulator to calculate the field dependent mobility. We analyzed the presence of trap states at the interface between organic material and gate insulator and we show the influence of trap states combined with the effect of field-dependent mobility on the transfer characteristic. Numerical calculations are also reported for the output characteristics of the device showing a very good agreement with the available experimental results.     

In Vitro and In Silico Analysis of New n-Butyl and Isobutyl Quinoxaline-7-carboxylate 1,4-di-N-oxide Derivatives against Trypanosoma cruzi as Trypanothione Reductase Inhibitors

American trypanosomiasis is a worldwide health problem that requires attention due to ineffective treatment options. We evaluated n-butyl and isobutyl quinoxaline-7-carboxylate 1,4-di-N-oxide derivatives against trypomastigotes of the Trypanosoma cruzi strains NINOA and INC-5. An in silico analysis of the interactions of 1,4-di-N-oxide on the active site of trypanothione reductase (TR) and an enzyme inhibition study was carried out. The n-butyl series compound identified as T-150 had the best trypanocidal activity against T. cruzi trypomastigotes, with a 13% TR inhibition at 44 μM. The derivative T-147 behaved as a mixed inhibitor with Ki and Ki’ inhibition constants of 11.4 and 60.8 µM, respectively. This finding is comparable to the TR inhibitor mepacrine (Ki = 19 µM).     

Validation of a Cleanroom Compliant Sonication-Based Decellularization Technique: A New Concept in Nerve Allograft Production

Defects of the peripheral nervous system are extremely frequent in trauma and surgeries and have high socioeconomic costs. If the direct suture of a lesion is not possible, i.e., nerve gap > 2 cm, it is necessary to use grafts. While the gold standard is the autograft, it has disadvantages related to its harvesting, with an inevitable functional deficit and further morbidity. An alternative to autografting is represented by the acellular nerve allograft (ANA), which avoids disadvantages of autograft harvesting and fresh allograft rejection. In this research, the authors intend to transfer to human nerves a novel technique, previously implemented in animal models, to decellularize nerves. The new method is based on soaking the nerve tissues in decellularizing solutions while associating ultrasounds and freeze–thaw cycles. It is performed without interrupting the sterility chain, so that the new graft may not require post-production γ-ray irradiation, which is suspected to affect the structural and functional quality of tissues. The new method is rapid, safe, and inexpensive if compared with available commercial ANAs. Histology and immunohistochemistry have been adopted to evaluate the new decellularized nerves. The study shows that the new method can be applied to human nerve samples, obtaining similar, and, sometimes better, results compared with the chosen control method, the Hudson technique.     

Design, synthesis, and biological activity of prazosin-related antagonists. Role of the piperazine and furan units of prazosin on the selectivity for alpha1-adrenoreceptor subtypes

Prazosin-related quinazolines 4-20 were synthesized, and their biological profiles at alpha1-adrenoreceptor subtypes were assessed by functional experiments in isolated rat vas deferens (alpha1A), spleen (alpha1B), and aorta (alpha1D) and by binding assays in CHO cells expressing human cloned alpha1-adrenoreceptor subtypes. The replacement of piperazine and furan units of prazosin (1) by 1, 6-hexanediamine and phenyl moieties, respectively, affording 3-20, markedly affected both affinity and selectivity for alpha1-adrenoreceptor subtypes in functional experiments. Cystazosin (3), bearing a cystamine moiety, was a selective alpha1D-adrenoreceptor antagonist being 1 order of magnitude more potent at alpha1D-adrenoreceptors (pA2, 8.54 +/- 0.02) than at the alpha1A- (pA2, 7.53 +/- 0.01) and alpha1B-subtypes (pA2, 7.49 +/- 0. 01). The insertion of substituents on the furan ring of 3, as in compounds 4 and 5, did not improve the selectivity profile. The simultaneous replacement of both piperazine and furan rings of 1 gave 8 which resulted in a potent, selective alpha1B-adrenoreceptor antagonist (85- and 15-fold more potent than at alpha1A- and alpha1D-subtypes, respectively). The insertion of substituents on the benzene ring of 8 affected, according to the type and the position of the substituent, affinity and selectivity for alpha1-adrenoreceptors. Consequently, the insertion of appropriate substituents in the phenyl ring of 8 may represent the basis of designing new selective ligands for alpha1-adrenoreceptor subtypes. Interestingly, the finding that polyamines 11, 16, and 20, bearing a 1,6-hexanediamine moiety, retained high affinity for alpha1-adrenoreceptor subtypes suggests that the substituent did not give rise to negative interactions with the receptor. Finally, binding assays performed with selected quinazolines (2, 3, and 14) produced affinity results, which were not in agreement with the selectivity profiles obtained from functional experiments. This rather surprising and unexpected finding may be explained by considering neutral and negative antagonism.     

IP QoS delivery in a broadband wireless local loop: MAC protocoldefinition and performance evaluation

The wireless approach to the last mile access (wireless local loop, known as WLL) is becoming increasingly attractive to network operators and service providers since it offers a flexible and cost-effective solution to enable delivery of even broadband services to end customers. In this paper, a full-blown broadband WLL network is presented. The proposal is based on the OFDM-CDMA technique, to which an added dynamic reservation/request MAC protocol is proposed, fully exploiting the OFDM-CDMA platform. Central to our proposal is the support of different QoS profiles, in the context of QoS aware networks. As a case study, the explicit presentation of the IETF integrated services support over our WLL system is addressed. An extensive performance evaluation focused on the MAC layer is then reported. We prove that our scheme achieves high utilization efficiency, as well as a fair share of the available radio capacity, even in the presence of highly heterogeneous traffic mix. Delay performance is provided for both reference traffic models, as well as for measured IP and MPEG traffic traces offered to the system     

Polythiophene–polyoxyethylene copolymer in polyfluorene-based polymer blends for light-emitting devices

Polyfluorene (PFO) films doped with different amount of a polythiophene-co-polyoxyethylene (P1) polymer were studied with the aim to obtain white emission. The Förster resonant energy transfer (FRET) is the basic mechanism that takes place in the photoluminescence of these blends. The non-conducting poly(oxyethylene) behaves as a inert spacer leading to a larger donor–acceptor chromophores separation and then a better control of FRET efficiency. As result, the light-emitting device with the architecture Al/Ca/P1:PFO/PEDOT:PSS/ITO was found to be more efficient than either the devices using pure PFO or P1. Near white CIE coordinates of (0.26, 0.33) with a maximum luminance of 2500 cd/m² were found for 2 wt.% device.A maximum external quantum efficiency of 1% was obtained, hence, suggesting that the enhancement of the electronic and optoelectronic properties could be achieved by incorporating P1 into the PFO.     

Metamorphic Heterostructure InP/GaAsSb/InP HBTs on GaAs Substrates by MOCVD

Good-quality metamorphic InP buffer layers have been successfully grown on GaAs substrates by metal-organic chemical vapor deposition. Characterization by atomic force microscope, transmission electron microscopy, high-resolution X-ray diffraction, and Hall measurements indicated that the layers are of high crystalline quality, good mobility, and excellent surface morphology. On this buffer, we demonstrated the first metamorphic InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) with good material quality and device performance. Metamorphic DHBTs showed direct-current and radio-frequency characteristics that are comparable to those grown on lattice-matched InP substrates.     

Surface recombination currents in "Type-II" NpN InP-GaAsSb-InP self-aligned DHBTs

Surface recombination effects are studied in non-passivated non-self-aligned and self-aligned NpN InP-GaAsSb-InP double heterostructure bipolar transistors (DHBTs) down to submicrometer emitter dimensions, and over current densities ranging from 10 A/cm/sup 2/ to 100 kA/cm/sup 2/. The present study is motivated by the drive to scale InP DHBTs for higher speeds and integration densities. Self-aligned InP-GaAsSb-InP DHBTs are characterized by weak emitter size effects (ESEs), and periphery recombination currents are found to be very nearly identical to published results for InP-GaInAs SHBTs despite the major differences in emitter junction band alignments ("type-II" versus "type-I") and injection mechanisms (thermal versus hot electron injection). The correspondence of measured periphery currents in both systems indicates that ESEs are dominated by a mechanism common to InP-GaAsSb and InP-GaInAs devices: this requirement is fulfilled by the direct electron injection from the InP emitter mesa sidewalls onto the extrinsic base surface. Consideration of band alignments and surface depletion effects at the extrinsic base surface is used to explain the commonality of emitter size effects in InP-GaAsSb and InP-GaInAs devices.     

Switching and memory devices based on a polythiophene derivative for data-storage applications

In this article, we report electrical characteristics of devices based on oriented and unoriented films of a polymer, namely poly[3-(6-methoxyhexyl)thiophene]. The current–voltage characteristics of sandwiched devices, based on unoriented polymer, showed hysteresis behavior, while oriented versions exhibited switching characteristics, i.e. presence of two conducting states depending on sweep direction of voltage scans. The ratio between the device current of two conducting states has been as high as 10⁵. This is comparable, if not better, than the results reported so far with complicated device architecture or doped polymeric materials. We have also demonstrated that the switching devices have an associated memory effect for data-storage applications.