Impact of Mole Fractions due to Work Function Variability (WFV) of Metal Gate on Electrical Parameters in Strained SOI-FinFET

In the recent sub-20 nm technology node, the process variability issues have become a major problem for scaling of MOS devices. We present a design for a strained Si/SiGe FinFET on an insulator using a 3D TCAD simulator. The impact of metal gate work function variability (WFV) on electrical parameters is studied. Such impact of WFV for different mole fractions (x) of the SiGe layer in a strained SOI-FinFET with varying grain size is presented. The results show that as the mole fraction is increased, the variability in threshold voltage (σVT) and off current (σIoff) is decreased; while, the variability of on-current (σIon) is increased. A notable observation is the distribution of electrical parameters approaches a normal distribution for smaller grain sizes.     

Analysis of spring softening effect on the collapse voltage of capacitive MEMS ultrasonic transducers

Microsystem Technologies - This paper explained the dependency of collapse voltage on semiconductor device structural features (membrane diameter, membrane thickness and the vertical distance...     

A Comprehensive Survey of Emergency Communication Network and Management

Wireless Personal Communications - The performance of wireless communication network is important in emergency rescue operations while ensuring optimum usage of limited wireless resources. Due to...     

Novel approach for the development of dietary fibre-anthocyanin enriched functional bread from culinary banana bract

Dietary fibre (DF)-anthocyanin formulation was incorporated in bread to develop anthocyanin rich DF powder (ARDFP) fortified bread. Prior to incorporation of DF-anthocyanin formulation in bread preparation, the cytotoxicity of DF and anthocyanin extracts was assessed. The effect of incorporation of different level of ARDFP with moisture on bread quality characteristics such as specific volume, textural, colour, sensory properties and starch digestibility was studied. The results revealed that extracted DF and anthocyanin of culinary banana bracts were nontoxic towards peripheral blood mononuclear cell and cytotoxic towards HT29 cancerous cell line. Incorporation of 2% ARDFP with 68% moisture was rated as best with higher specific volume (5.50 cm³ g⁻¹), improved textural properties (high springiness and cohesiveness), anthocyanin content (9.08 mg per 100 g), colour characteristics and sensory acceptability next to control. The in vitro digestibility study suggested increased incorporation of ARDFP in bread flour reduced the rate of starch digestibility (0.0035 min⁻¹).     

Impact of temperature on RF characteristics and electrical noise analysis of an L‐shaped gate tunnel FET with hetero‐stacked source configuration

In this article, a pocket doped hetero‐stacked L‐shaped gate silicon‐on‐insulator (SOI) tunnel FET (HS‐LG‐TFET) has been proposed and investigated. The band‐to‐band tunneling (BTBT) feature of LG‐TFET in a direction perpendicular to the channel facilitates higher ON current due to relatively larger tunneling area. The channel appears to be U‐shaped that is primarily distributed along the vertical direction, which increases the device scalability. Besides, the HS source architecture owns an upper source layer, which consists of larger bandgap material silicon and an underlying source layer, which consists of smaller bandgap material germanium. This underlying layer of smaller bandgap material in HS‐LG‐TFET provides enhanced ON current as well as steeper subthreshold swing behavior. The electrical noise behavior of the proposed structure is addressed to test its viability. Furthermore, a complete radio frequency (RF) characterization, including transconductance, capacitances, cutoff frequency, gain bandwidth product, maximum oscillation frequency, transit time, and minimum noise figure of the proposed device are analyzed to examine its analog applicability. Moreover, for checking the reliability issues associated with temperature, the temperature dependence on transfer and RF characteristics are also explored and presented. Further, the non‐quasi‐static equivalent circuit of the proposed structure is presented to analyze its behavior in the high frequency range.     

The beneficial impact of a p–p+ junction on DC and analog/radio frequency performance of a vertical super-thin body FET

This article investigates the impact of the p–p⁺ junction (at the body-substrate interface) on different direct current (DC) and analog/radio frequency (RF) performance parameters of a newly invented structure called vertical super-thin body field effect transistor (VSTB FET) through a well-calibrated TCAD tool. At a fixed body doping, the influence of p–p⁺ junction was inspected for different substrate doping (N_s); which reveals that N_s has a robust control on the device electrostatics. Interestingly, higher N_s is seen to significantly suppress different short channel effects (SCEs), which in turn helps to improve various DC parameters excellently. An increase in N_s from 10¹⁵ to 10¹⁸ cm^?3 improves off-state leakage current and on-to-off current ratio by three orders of magnitude. Also, such a change in N_s decreases subthreshold swing and drain-induced-barrier-lowering by 8.78 mV/dec and 11.15 mV/V, respectively. The underlying physics behind such improvement at higher N_s is explored through the off-state channel electron density profiles corresponding to different N_s values. Further, different analog/RF parameters such as transconductance, input capacitance, gate-drain capacitance, output conductance, gain-bandwidth-product, and transconductance frequency product (TFP) show slight improvement for increasing N_s. In contrast, TGF, GFP, and GTFP offer large enhancement at higher N_s. This study is expected to demonstrate the significance of N_s on device performance.     

Performance analysis of RF MEMS capacitive switch with non uniform meandering technique

This Paper reports on investigation of High C_on C_off ratio Capacitive Shunt RF MEMS Switch and detailed comparison between uniform three meander beam with non-uniform single meander beam RF MEMS switch. RF MEMS Switches are designed for operation in the range 5–40 GHz. Pull in analysis is performed with gold as a beam material. Simulation reveals that use of high K dielectric material can drastically improve the capacitance ratio of switch. For the same geometry, pull in voltage is 2.45 V for HfO₂, 2.7 V for Si₃N₄ and Capacitive Ratio of the switch with Si₃N₄ is 83.75 and Capacitive Ratio with HfO₂ is 223 at 2g₀ (air gap) and 0.8 μm thickness of beam. The Radio Frequency performance of RF MEMS switch is obtained by scattering parameters (insertion loss, Return loss and isolation) which are mainly dominated by down to up capacitance ratio and MEMS bridge geometries. RF analysis shows that insertion loss as low as ?0.4 dB at 20 GHz and isolation as high as 80 dB at 20 GHz can be achieved. Investigation of three uniform meander Design and non-uniform single meander design reveals that use of non-uniform design reduces the design complexity and saves substrate area still maintaining almost same device performance. S-parameter analysis is carried out to compare device performance for both structures. DC analysis of the proposed switch is carried out using Coventorware and RF analysis is performed in MATLAB.     

Effect of ultrasound,centrifugation, and enzymatic pretreatments on phytochemical properties and membrane fouling during microfiltration of Sohiong (Prunus nepalensis L.) juice

Food Science and Biotechnology - The study aimed to investigate the effects of various pretreatment methods on sohiong fruit juice during the microfiltration process. The ultrasound,...     

Effect of Ge Mole Fraction on Electrical Parameters of Si1−xGex Source Step-FinFET and its Application as an Inverter

Silicon - This paper proposes device geometry of Fin-Field-Effect-Transistor (FinFET) with a step-fin. The source region of the proposed device consists of Si1−xGexand the effects of Ge-mole...     

Subthreshold surface potential and drain current models for short-channel pocket-implanted MOSFETs

An analytical subthreshold surface potential model for short-channel pocket-implanted (double-halo) MOSFET is presented. The effect of the depletion layers around the source and drain junctions on channel depletion layer depth, which is very important for short-channel devices, is included. Using this surface potential, a drift-diffusion based analytical subthreshold drain current model for short-channel pocket-implanted MOSFETs is also proposed. A physically-based empirical modification of the channel conduction layer thickness that was originally proposed for relatively long-channel conventional device is made for such short-channel double-halo devices. Very good agreement for both the surface potential and drain current is observed between the model calculation and the prediction made by the 2-D numerical device simulation using Dessis.