Biodegradation of monoaromatic hydrocarbons in aquifer columns amended with hydrogen peroxide and nitrate

The ability of indigenous microorganisms to degrade benzene, toluene, ethylbenzene and xylenes (BTEX) in laboratory scale flow-through aquifer columns was tested separately with hydrogen peroxide (110 mg/l) and nitrate (330 mg/l as NO₃⁻) amendments to air-saturated influent nutrient solution. The continuous removal of individual components from all columns relative to the sterile controls provided evidence for biodegradation. In the presence of hydrogen peroxide, the indigeneous microorganisms degraded benzene and toluene (> 95%), meta- plus para-xylene (80%) and ortho-xylene (70%). Nitrate addition resulted in 90% removal of toluene and 25% removal of ortho-xylene. However, benzene, ethylbenzene, meta- and para-xylene concentrations were not significantly reduced after 42 days of operation. Following this experiment, low dissolved oxygen (< 1 mg/l) conditions were initiated with the nitrate-amended column influent in order to mimic contaminated groundwater conditions distal from a nutrient injection well. Toluene continued to be effectively degraded (> 90%), and more than 25% of the benzene, 40% of the ethylbenzene, 50% of the meta- plus para-xylenes and 60% of the ortho-xylene were removed after several months of operation.     

西藏南部地区人工爆炸地震探测的地壳结构

众所周如,西藏地区是研究地球深部结构和构造的窗口,是研究大陆板块学说的重要场所,也是寻找热源和其它矿产资源的有利地区.因此,世界各国地学科学家都希望在本地区进行科学研究工作,或与我国科学工作者协作共同探索这一重要地区.中国和法国的地质、地球物理科学家经商讨共同组成“中法喜马拉雅山地质研究队”,对西藏中部广大地区进行地质、地球物理的科学研究工作.深部地震探测是地球物理研究中的重要内容.中法双方共同决定,在中国西藏南部的日喀则地区至北边的那曲地区作地震探测工作.为了探测地壳上地幔的结构,1981年在西藏的南部佩枯错至普莫雍错500公里的喜马拉雅山北麓——雅鲁藏布江地区进行了人工爆炸地震探测工作.本文是中法地质研究队合作的深部地震探测资料的解释结果.     

Reverse short channel effects in high-k gated nMOSFETs

Anomalous threshold voltage roll-up behavior, commonly referred as reverse short channel effect (RSCE), has been observed in high-k (HfO₂ on SiON buffer, Al₂O₃ on SiON buffer) gated submicron nMOSFETs, while the SiO₂ or SiON control samples show normal short channel effect (SCE) behavior. The possible causes such as inhomogeneous channel doping profile and gate oxide thickness variation near S/D ends have been ruled out. The results indicate that interface trap density that dependents on channel length is the main cause of the RSCE observed here. In addition, oxide charge also plays a role.