排序方式: 共有82条查询结果,搜索用时 15 毫秒
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研究了退火处理对ZnO薄膜结晶性能的影响.ZnO薄膜由直流反应磁控溅射技术制得,并在O2气氛中不同温度(200~1000℃)下退火,利用X射线衍射(XRD)、原子力显微镜(AFM)和X射线光电子能谱(XPS)对其结晶性能进行了研究,提出了一个较为完善的ZnO薄膜退火模型.研究表明:热处理可使c轴生长的薄膜取向性增强;随退火温度的升高,薄膜沿c轴的张应力减小,压应力增加;同时晶粒度增大,表面粗糙度也随之增加.在640℃的应力松弛温度(SRT)下,ZnO薄膜具有很好的c轴取向,沿c轴的应力处于松弛状态,晶粒度不大,表面粗糙度较小,此时ZnO薄膜的结晶性能最优. 相似文献
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Ternary Zn1-x CdxO alloying films were deposited on silicon substrates by a reactive magnetron sputtering method. The structures of the films were characterized by transmission electron microscopy(TEM) and X-ray diffraction(XRD) analysis, respectively. The XRD measurement shows that the wurtzite-type structure of Zn1-xCdxO can be stabilized up to Cd content of x=0.53 without a cubic CdO phase separation. The TEM measurement shows that the films have a columnar structure and the grains are highly c-axis oriented perpendicularly on silicon substrate although some grain boundaries are slightly tilted. High resolution TEM observation indicates that a native layer of amorphous SiO2 exists at the ZnCdO/Si interface and that ZnCdO grains with c-axis preferred orientation nucleate directly on substrate surface. 相似文献
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p-ZnxMg1-xO:Na/n-ZnO p-n junction light emitting diode (LED) was produced on n-ZnO (0001) single-crystal substrate using pulsed laser deposition. The realization of band gap engineering was achieved by the incor-poration of Mg in ZnO layers and was confirmed by photoluminescence spectrum. The p-type ZnxMg1-xO:Na film with low resistance was obtained at 500 ℃ and in which, Na has taken effect evidenced by Hall and X-ray photo-electron spectroscopy measurements. The current-voltage curve of LED showed a rectifying behavior and obvious electroluminescence was realized by feeding a direct current up to 40 mA. Furthermore, its structural and electric characters are discussed as well. 相似文献
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系统分析了利用超高真空CVD技术在Si衬底上外延Si-xGex合金的体内组分分布情况和Ge的表面偏析现象。用SIMS对Si和Ge的组分作了深度剖析。在生长过程中,组分均匀,在表面Ge浓度减小,Si浓度没有明显变化。在不经HF酸清洗和在HF酸中去掉表面自然氧化层的两种情况下,用XPS分别对外延层表面进行了定量分析,得到Ge的表面偏析与表面自然氧化相关的结论。 相似文献
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采用脉冲激光沉积法制备了Al掺杂ZnO(AZO)薄膜, 研究了不同沉积氧压下薄膜的光电性能。当沉积压强为0.1 Pa时, AZO薄膜光电性能最优。将该薄膜用于GaN基LED透明电极作为电流扩展层, 在20 mA正向电流下观察到了520 nm处很强的芯片发光峰, 但芯片工作电压较高, 约为10 V, 芯片亮度随正向电流的增大而增强。二次离子质谱测试表明, AZO薄膜与GaN层界面处两种材料导电性能的变化以及钝化层的形成是导致芯片工作电压偏高的原因。 相似文献
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以Na2S、Na2SnO3、稀盐酸及水合肼为原料成功合成了锡硫化合物(Metalchal cogenidometalates,MCCs)。该化合物在离子溶液中解离出SnS44-或Sn2S46-,这两种低聚阴离子因其电子空间结构特殊而具有配位作用,故能置换CdSe量子点表面原有的长链有机配体,从而实现量子点从有机相到无机相的转移。配体交换后的量子点可以较好地分散在水、氨水、水合肼和二甲亚砜等一系列极性溶剂中。我们分别用透射电子显微镜(TEM)、紫外吸收光谱(UV)、荧光发射光谱(PL)和红外吸收光谱(FTIR)表征了CdSe的分散性、光学性质及表面配体情况。 相似文献