物理升华法生长ZnO晶体的研究

Zinc oxide（ZnO） has a wide band gap, high stability and a high thermal operating range that makes it a suitable material as a semiconductor for fabricating light emitting diodes（LEDs） and laser diodes, photodiodes, power diodes and other semiconductor devices. Recently, a new crystal growth for producing ZnO crystal boules was developed, which was physical vapor transport（PVT）, at temperatures exceeding 1500 ？C under a certain system pressure. ZnO crystal wafers in sizes up to 50 mm in diameter were produced. The conditions of ZnO crystal growth, growth rate and the quality of ZnO crystal were analyzed. Results from crystal growth and material characterization are presented and discussed. Our research results suggest that the novel crystal growth technique is a viable production technique for producing ZnO crystals and substrates for semiconductor device applications.     

地方院校半导体物理实验教学的改革实践

半导体物理实验是专门为半导体物理所开设的实验课程,在培养高质量半导体人才的过程中起着关键作用。本文分析了目前半导体物理实验开设现状,针对地方院校特点,结合我校多年实践经验,从实验教师队伍、实验设备、实验教学内容、实验教学方法、实验考核方式、实验安全等方面对半导体物理实验进行了一系列改革。实践结果表明,在地方院校师资、经费受限的情况下,实验教学效果良好。结果可供其他开设半导体物理实验的地方院校参考。     

Al掺杂6H-SiC铁磁性研究(英文)北大核心CSCD

使用物理气象沉积法生长了轻Al掺杂6H-SiC样品,并使用超导量子干涉磁强计(SQUID)对无腐蚀及腐蚀后的样品进行了测试,发现了腐蚀后的样品在室温下表现出铁磁性。经过计算,样品磁信号并非来源于腐蚀剂KOH及K2CO3。同时腐蚀后的样品形貌表明杂质聚集在腐蚀后的缺陷附近从而形成了一定的铁磁性,因此缺陷被腐蚀放大是样品形成铁磁性的主要原因。