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Atom layer deposition (ALD)-Al2O3 thin films are considered effective passivation layers for p-type silicon surfaces. A lower surface recombination rate was obtained through optimizing the deposition parameters. The effects of some of the basic substrate characteristics including material type, bulk resistivity and surface morphology on the passivation performance of ALD-Al2O3 are evaluated in this paper. Surface recombination velocities of 7.8 cm/s and 6.5 cm/s were obtained for p-type and n-type wafers without emitters, respectively. Substrates with bulk resistivity ranging from 1.5 to 4 Ω · cm were all great for such passivation films, and a higher implied Voc of 660 mV on the 3 Ω · cm substrate was achieved. A minority carrier lifetime (MCL) of nearly 10 μs higher was obtained for cells with a polished back surface compared to those with a textured surface, which indicates the necessity of the polishing process for high-efficiency solar cells. For n-type semi-finished solar cells, a lower effective front surface recombination velocity of 31.8 cm/s was acquired, implying the great potential of (ALD)-Al2O3 thin films for high-efficiency n-type solar cells.  相似文献   
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随着多能源耦合程度的加深,电-热耦合能源系统发生级联事故的概率日益增大,其安全性面临新的挑战。针对现有区域综合能源系统安全域研究中未深入考虑风电不确定性影响的问题,建立了考虑风电接入的电-热耦合能源系统实用化安全域模型,提出了考虑风电接入的电-热耦合能源系统实用化安全上边界仿真求解流程。结合算例验证了所提模型的有效性,并对系统安全域的二维/三维安全上边界进行求解观测。结果表明,在二维/三维空间中,风电的不确定性会导致系统实用化安全上边界在一定区域内分布,不再是唯一确定的一条直线或一个平面,分布区域范围的大小与可视化观测管线容量和风机额定容量有关。  相似文献   
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