On the Use of Indium Arsenide as the Waveguide Material in the Measurements by Attenuated Total Reflectance

Optics and Spectroscopy - The current–voltage characteristics and photocurrent of “monolithic” diode optical pairs optically coupled by a substrate made of InAs common for them...     

Laws of Influence of Structural Characteristics on the Strength and Crack Resistance of Aging Metallic Materials

The structural characteristics (the volume fraction, size, and shape of and the distance among hardening-phase particles) of aging alloys and steels, which define the behavior of the critical stress intensity factor during thermal hardening, are determined using the structural-mechanical approach we have developed. It is experimentally demonstrated for maraging steels that our approach is capable of proving the correlations of strength, plasticity, and crack- resistance with the structural characteristics, which were varied by changing the chemical composition of steel and thermokinetic aging conditions__________Translated from Prikladnaya Mekhanika, Vol. 41, No. 1, pp. 94–101, January 2005.     

Structural approach to enhance the fracture resistance of high-strength metallic materials

The paper proposes an approach to form (by special heat treatment) a structure and phase composition of martensitic steel that would enhance its ductility in the high-strength state. A correlation is experimentally established between the stability of fracture resistance and ductility in linear and plane stress states. The behavior of the scatterband of the ultimate strength with increase in the degree of ductility is analyzed. The possibility of predicting the ultimate strength from the lower edge of its scatterband is demonstrated with an example of a circular cylindrical shell __________ Translated from Prikladnaya Mekhanika, Vol. 42, No. 8, pp. 68–78, August 2006.     

Dark current-voltage characteristic of triple-junction solar cells: Their relation with the efficiency and the influence of passivating treatments

A correlation between the main parameter of a solar cell, the conversion efficiency, and its dark I–V characteristic is investigated. A formula is derived that expresses an increment (decrement) of the efficiency through a decrement (increment) of the current measured at a certain voltage (here at 2.4 V). Relationships are deduced based on which six methods for passivating the sidewalls of triple-junction InGaP/GaAs/Ge heterostructures grown by metal-organic vapor-phase epitaxy are tested to see how they influence the dark I–V characteristic. The influence of different factors, such as post-growth annealing, damaging radiation, etc., on the solar cell efficiency can be estimated by taking the dark I–V characteristic.     

Experimental study of the distribution of plastic strains near a crack tip during static loading

S. P. Timoshenko Institute of Mechanics, National Academy of Sciences of Ukraine, Kiev. Translated from Prikladnaya Mekhanika, Vol. 30, No. 11, pp. 69–75, November, 1994.     

Examination of the Capabilities of Metalorganic Vapor-Phase Epitaxy in Fabrication of Thin InAs/GaSb Layers

Technical Physics - The capabilities of metalorganic vapor-phase epitaxy (MOVPE) in fabrication of structures with thin (1–2 nm) alternating InAs/GaSb layers on a GaSb substrate are studied....     

InSb/InAsSb nanostructures for Mid-IR optoelectronics

The technique of preparation of nanostructures with InSb quantum dots in an InAs(Sb) matrix, emitting in the mid-IR range upon optical and injection pumping, by molecular beam epitaxy is considered and the structural and optical properties of these nanostructures are investigated. The characteristics of the first injection lasers based on III–V/II–VI hybrid heterostructures with InSb/InAs(Sb) quantum dots in the active region are reported.     

Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices

The miniband conductivity in short-period GaAs/AlAs superlattices with a terahertz cavity has been studied. A stepwise decrease in the current caused by the formation of the electrical domains has been observed in current–voltage characteristics at a certain threshold voltage. It has been found that this threshold voltage changes considerably under the variation of the cavity parameters. The shift of the threshold has been explained by the excitation of high-amplitude oscillations in the cavity.     

InAsSbP Photodiodes for 2.6–2.8-μm Wavelengths

Research data for photovoltaic, I–V, and C–V characteristics of InAsSbP/InAs heterostructure photodiodes that operate at room temperature in the wavelength range 2.6–2.8 μm have been reported. Based on these data and available publications, conclusions have been drawn about the prospects for using these photodiodes in a number of applications.