On the Use of Indium Arsenide as the Waveguide Material in the Measurements by Attenuated Total Reflectance

Optics and Spectroscopy - The current–voltage characteristics and photocurrent of “monolithic” diode optical pairs optically coupled by a substrate made of InAs common for them...     

Simulation of characteristics of optical gas sensors based on diode optopairs operating in the mid-IR spectral range

An analytic model is proposed for an optical gas sensor based on diode optopairs, which takes into account the line spectral structure of gases being analyzed, as well as peculiarities of spectral characteristics of immersion-type light-emitting diodes and photodiodes operating in the mid-IR spectral range. The model makes it possible to calculate the transfer characteristic of the sensor and to estimate the measurement error for gas analyzers operating on the basis of these sensors. The experiments demonstrate bright prospects of application of sensors based on immersion-type diode optopairs in small-size gas analyzers; the expected values of the threshold sensitivity of a CO₂ sensor at a level of 10 ppm and the absolute error of measurements below 0.1% (reduced error is 1%) in a range of up to 10 vol % at a speed of up to 10 counts per second exceed the parameters of available portable CO₂ gas analyzers. The validity of the model is confirmed by conformity between the calculated data and the experimental results obtained on a prototype of a CO₂ diode sensor.     

Current-voltage characteristics and photocurrent collection in radially symmetric front-surface-illuminated InAsSb(P) photodiodes

The I–V characteristics of front-surface-illuminated InAsSb(P) photodiodes are simulated in terms of a simple model that takes into account the radial variation of the lateral resistance of a semiconductor layer on the irradiated side. The applicability of the model for predicting the form of the photocurrent density distribution and its influence on the sensitivity of the photodiodes is demonstrated.     

InAsSb Diode Optical Pairs for Real-Time Carbon Dioxide Sensors

Technical Physics - Efficiencies of optical pairs consisting of fast low-noise uncooled immersion LEDs and photodiodes based on InAsSb solid solution are studied. The proposed optical pairs are...     

InAsSbP Photodiodes for 2.6–2.8-μm Wavelengths

Research data for photovoltaic, I–V, and C–V characteristics of InAsSbP/InAs heterostructure photodiodes that operate at room temperature in the wavelength range 2.6–2.8 μm have been reported. Based on these data and available publications, conclusions have been drawn about the prospects for using these photodiodes in a number of applications.     

InGaAsSb negative luminescent devices with built-in cavities emitting at 3.9 μm

An As₂S₃ fiber coupled to an InGaAsSb photodiode was used to record the radiation distribution over the emitting surface in InGaAsSb episide-down-bonded negative luminescence devices (λ=3.9 μm). Emission spectra were recorded under forward and reverse bias and both were modulated by a Fabry–Perot resonator formed by the anode contact and emitting InAs surface in 45-μm thick diodes. The results show that the current/emission distribution crowds in the vicinity of the contact under forward bias, while a uniform current/emission distribution over the emitting surface is seen under reverse bias.