一种基于四甲基氢氧化铵溶液蒸汽的新型硅刻蚀方法

在微机电技术中，利用刻蚀方法对硅进行体结构加工是一步重要的工艺程序. 本文提出了一种基于四甲基氢氧化铵的新型刻蚀方法，四甲基氢氧化铵刻蚀溶液被加热到沸点，单晶硅片置于刻蚀液面的上方，通过刻蚀溶液的蒸汽实现对硅片的各向异性气相刻蚀，此方法并不依赖于昂贵的传统干法刻蚀真空设备. 相比于传统湿法刻蚀，本文提出的刻蚀方法具有若干优点，例如低粗糙度、高刻蚀速率和高均匀性，刻蚀速率和表面粗糙度分别可达到2.13 μm/min和1.02 nm. 同时，在背腔刻蚀工艺中，在硅片非刻蚀面上的隔膜结构和Al基图形可被完好无损地保存下来. 最后，本文提出了一种可能的刻蚀机理说明观察到的实验现象. 与传统湿法刻蚀不同，在本文的气相刻蚀中，由于刻蚀溶液的蒸发过程，刻蚀表面将形成一层薄的水汽层，四甲基氢氧化铵刻蚀剂的离化和刻蚀反应均在这一层中进行，这有助于H₂气泡的快速脱附，以及反应界面分子交换速率的提升.     

The measuring of spectral emissivity of object using chaotic optimal algorithm

There exist a considerable variety of factors affecting the spectral emissivity of an object. The authors have designed an improved combined neural network emissivity model, which can identify the continuous spectral emissivity and true temperature of any object only based on the measured brightness temperature data. In order to improve the accuracy of approximate calculations, the local minimum problem in the algorithm must be solved.Therefore, the authors design an optimal algorithm, i.e. a hybrid chaotic optimal algorithm, in which the chaos is used to roughly seek for the parameters involved in the model, and then a second seek for them is performed using the steepest descent. The modelling of emissivity settles the problems in assumptive models in multi-spectral theory.