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Improved thermal property of strained InGaAlAs/AlGaAs quantum wells for 808-nm vertical cavity surface emitting lasers 下载免费PDF全文
Zhuang-Zhuang Zhao 《中国物理 B》2022,31(3):34208-034208
The 808-nm vertical cavity surface emitting laser (VCSEL) with strained In0.13Ga0.75Al0.12As/Al0.3Ga0.7As quantum wells is designed and fabricated. Compared with the VCSELs with Al0.05Ga0.95As/Al0.3Ga0.7As quantum wells, the VCSEL with strained In0.13Ga0.75Al0.12As/Al0.3Ga0.7As quantum wells is demonstrated to possess higher power conversion efficiency (PCE) and better temperature stability. The maximum PCE of 43.8% for 10-μm VCSEL is achieved at an ambient temperature of 30 ℃. The size-dependent thermal characteristics are also analyzed by characterizing the spectral power and output power. It demonstrates that small oxide-aperture VCSELs are advantageous for temperature-stable performance. 相似文献
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Beam steering in implant defined coherently coupled vertical cavity surface emitting laser(VCSEL) arrays is simulated using the FDTD solution software. Angular deflection dependent on relative phase differences among elements, inter-element spacing, element size and emitted wavelength is analyzed detailedly and systematically.We design and fabricate 1×2 implant defined VCSEL arrays for optimum beam steering performance. Electronically controlled beam steering with a maximum deflection angle of 1.6° is successfully achieved in the 1×2 VCSEL arrays. The percentage of the power in the central lobe is above 39% when steering. The results show that the steering is controllable. Compared with other beam steering methods, the fabrication process is simple and of low cost. 相似文献
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质子注入型面发射激光器相干耦合阵列能够实现同相模式的激射,但是由于制作过程中的工艺不均匀性引起单元间存在相位差,影响光束的质量。本文通过设计分离电极结构,使每个单元注入的电流得到分别的控制,实现了3单元三角排列阵列高光束质量同相耦合模式的激射。阵列远场发散角仅为3.4°,大约有25.6%的全部能量聚集在中心光斑。激射光谱的线宽为0.24 nm,边模抑制比为27 dB。该方法能够有效提高相干耦合阵列的光束质量,弥补制作工艺中引入的单元不均匀性,提高器件的可靠性和实用性。质子注入方法简单、成本低,能够成为制作高光束质量相干耦合阵列的一个重要方法。 相似文献
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