厚度与应变效应对La0.67Ca0.33MnO3薄膜电输运与居里温度的影响

在厚度为25—400nm范围内，系统地研究了 (001)SrTiO_3(STO), (001)LaAlO_3(LAO)衬底上La_0.67Ca_0.33Mn_O.3 (LCMO)薄膜的电输运与居里温度T_C随薄膜厚度及衬底的变化. 结果表明，随薄膜变薄，电阻率ρ增加，T_C降低. 对于同一薄膜厚度，LCMO/STO薄膜的ρ大于LCMO/LAO基上的薄膜的ρ. T_C衬底的依赖关系则与ρ相反. 分析表明，LCMO薄膜的低温区电阻温度(ρ-T) 符合关系式ρ=ρ_0+Bω_s/sin h^2(ω_s/2/k_BT)+CT^n， 其中ρ_0为剩余电阻；等号右端第二项反映软光学模声子对电子散射的贡献；第三项包括其余可能散射机 理在电输运过程中所起的作用；B，ωs（软光学模声子的平均频率）与C都为拟合系数. 高温区的电输运则由小极化子跃迁模型ρ=DT×exp（E_a/k_BT）描述（E_a为极化子激 发能）. 根据ρ_0，ωs，E_a以及T_Ｃ变化，初步讨论了薄膜中的厚度与应变效应. 进一步 研究发现ωs，E_a的变化与T_C相关，从而说明极化子效应为影响T_C变化的主要因素. 关键词： 锰氧化物薄膜 电输运 居里温度 极化子     

Abundant photoelectronic behaviors of La_(0.67)Sr_(0.33)MnO_3/Nb:SrTiO_3 junctions

Temperature dependence on rectifying and photoelectronic properties of La_(0.67)Sr_(0.33)MnO_3/Nb:SrTiO_3(LSMO/STON) junctions with the thickness values of LSMO film varying from 1 nm to 54 nm are systematically studied. As shown experimentally, the junctions exhibit good rectifying properties. The significant differences in photoemission property among the LSMO/STON junctions are observed. For the junction in a thicker LSMO film, the photocurrent shows a monotonic growth when temperature decreases from 300 K to 13 K. While for the junction in an ultrathin LSMO film, the behaviors of photocurrent are more complicated. The photocurrent increases rapidly to a maximum and then smoothly decreases with the decrease of temperature. The unusual phenomenon can be elucidated by the diffusion and recombination model of the photocarrier.     

Direct measurement of the interfacial barrier height of the manganite p–n heterojunction

A manganite p-n heterojunction composed of Lao.67Sro.33MnO3 film and 0.05 wt% Nb-doped SrTiO3 substrate is fabricated. Rectifying behavior of the junction well described by the Shockley equation is observed, and the transport properties of the interface are experimentally studied. A satisfactorily logarithmic linear dependence of resistance on temperature is observed in a temperature range of 150 K-380 K, and the linear relation between bias and activation energies deduced from the R - lIT curves is observed. According to activation energy, the interfacial barrier of the heterojunction is obtained, which is 0.91 eV.     

厚度与应变效应对La0.67 Ca0.33 MnO3薄膜电输运与居里温度的影响

在厚度为25-400nm范围内,系统地研究了(001)SrTiO3(STO),(001)LaAlO3(LAO)衬底上La0.67Ca0.33MnO3(LCMO)薄膜的电输运与居里温度TC随薄膜厚度及衬底的变化.结果表明,随薄膜变薄,电阻率ρ增加,TC降低.对于同一薄膜厚度,LCMO/STO薄膜的ρ大于LCMO/LAO基上的薄膜的ρ.TC与衬底的依赖关系则与ρ相反.分析表明,LCMO薄膜的低温区电阻温度(ρ-T)符合关系式ρ=ρ0+Bωs/sinh2(hωs/2/kBT)+CTn,其中ρ0为剩余电阻;等号右端第二项反映软光学模声子对电子散射的贡献;第三项包括其余可能散射机理在电输运过程中所起的作用;B,ωs(软光学模声子的平均频率)与C都为拟合系数.高温区的电输运则由小极化子跃迁模型ρ=DT×exp(Ea/kBT)描述(Ea为极化子激发能).根据ρ0,ωs,Ea以及TC变化,初步讨论了薄膜中的厚度与应变效应.进一步研究发现ωs,Ea的变化与TC相关,从而说明极化子效应为影响TC变化的主要因素.     

Rotation of ferromagnetic clusters induced magnetoresistance in the junction composed of La0.9Ca0.1MnO3 +δ and 1 wt.% Nb-doped SrTiO3

A junction composed of ultrathin La0.9Ca0.1MnO3＋δ （LCMO） film and 1 wt.% Nb-doped SrTiO3 was fabricated and its magnetoresistance （MR） was studied and compared with LCMO film. It was found that the resistance of the junction has a similar dependence on magnetic field as that of the LCMO film： the curvature of R-H curves is upward above Curie temperature （Tc） and downward below TC. These behaviours strongly suggest that the rotation of ferromagnetic clusters in manganite also causes MR in the corresponding junction. This MR can be qualitatively understood by the change of the width of the barrier induced by the rotation of ferromagnetic clusters. These results suggest a possibility to obtain junctions with large low-field MR.     

La0.67Ca0.33MnO3薄膜中的矫顽力随膜厚与衬底的变化

系统研究了衬底为SrTiO3和LaAlO3上的La0.67Ca0.33MnO3薄膜中的矫顽力随厚度和应变的变化。结构分析表明薄膜为（001）方向织构，而且薄膜中的晶粒尺寸随着薄膜厚度的减小而减小。磁测量表明矫顽力先随着膜厚的减小而增加，在t=10-25nm附近到达一极大值。随后，矫顽力随厚度的减小而降低。还得出矫顽力的大小与测量方向有关：t≥25nm (t≤10nm)时，难磁化方向的矫顽力大于（小于）易磁化方向的矫顽力。据此，我们提出：在厚膜（t≥25nm）中，矫顽力变化由畴壁钉扎机制决定；在超薄膜（t≤10nm）中，则与磁畴的形核机制有关。根据t= 5、10、25、400nm的LCMO/STO薄膜的初始磁化曲线，以及t=5，50nm的LCMO/LAO薄膜的小磁滞回线的测量，我们对薄膜中矫顽力机制作了验证，并且还讨论了钉扎和形核机制发生的非均匀区的尺寸。     

Effect of charge order transition on tunneling resistance in Pr_(0.6)Ca_(0.4)MnO_3/Nb-doped SrTiO_3 heterojunction

An oxide p–n heterojunction composed of Pr0.6Ca0.4MnO3film, with a charge order(CO) transition, and 1wt% Nbdoped SrTiO3substrate is fabricated, and the transport properties of the interface are experimentally studied. The rectifying behavior of the junction, well described by the Newman equation, is observed, indicating that tunneling is the dominant process by which the carriers pass through the interface. Above and below the CO transition temperature, satisfactory linear dependencies of junction resistance on temperature are observed, but the slopes of the two resistance-temperature relations are different. The CO process is believed to be relevant to this difference.