一种针对弱场搜寻态冷极性分子的可控静电表面囚禁方案

提出一种使用带电金属环和六个球电极和一个外加偏置电场实现对冷极性分子静电囚禁的新方案.计算装载和囚禁时空间电场分布.囚禁中心距离芯片表面的高度可以通过外电场和环形电极所加电压来操控.蒙特卡罗模拟表明对于中心速度为15 m·s^-1的ND₃分子束,装载效率可以达到70%,得到冷分子的温度大约为45 mK.当继续增加偏置电场强度时,单阱分裂为对称的两个阱.如果同时改变球形电极上所加电压,得到不对称的两个阱,可以借此来调节两个阱中所囚禁的冷分子数目的比例.为了易于理解,用蒙特卡罗方法模拟了装载、囚禁、分裂冷分子波包的动力学过程.     

Production of CH （A2△） by multi-photon dissociation of （CH3）2CO,CH3NO2, CH2Br2, and CHBr3 at 213 nm

In order to realize electrostatic Stark deceleration of CH radicals and study cold chemistry, the fifth harmonic of a YAG laser is used to prepare CH(A2△) molecules through using the multi-photon dissociation of(CH3)2CO, CH3NO2, CH2Br2,and CHBr3 at ～ 213 nm. The CH product intensity is measured by using the emission spectrum of CH(A2△→ X2Π). The dependence of fluorescence intensity on laser power is studied, and the probable dissociation channels are analyzed. The relationship between the fluorescence intensity and some parameters, such as the temperature of the beam source, stagnation pressure, and the time delay between the opening of pulse valve and the photolysis laser, are also studied. The influence of three different carrier gases on CH signal intensity is investigated. The vibrational and rotational temperatures of the CH(A2△) product are obtained by comparing experimental data with the simulated ones from the LIFBASE program.     

Adiabatic cooling for cold polar molecules on a chip using a controllable high-efficiency electrostatic surface trap

We propose a controllable high-efficiency electrostatic surface trap for cold polar molecules on a chip by using two insulator-embedded charged rings and a grounded conductor plate. We calculate Stark energy structure pattern of ND3 molecules in an external electric field using the method of matrix diagonalization. We analyze how the voltages that are applied to the ring electrodes affect the depth of the efficient well and the controllability of the distance between the trap center and the surface of the chip. To obtain a better understanding, we simulate the dynamical loading and trapping processes of ND3 molecules in a ｜J, KM = ｜1,-1 state by using classical Monte–Carlo method. Our study shows that the loading efficiency of our trap can reach ～ 88%. Finally, we study the adiabatic cooling of cold molecules in our surface trap by linearly lowering the potential-well depth（i.e., lowering the trapping voltage）, and find that the temperature of the trapped ND3 molecules can be adiabatically cooled from 34.5 m K to ～ 5.8 m K when the trapping voltage is reduced from-35 k V to-3 k V.     

Electrostatic surface trap for cold polar molecules on a chipElectrostatic surface trap for cold polar molecules on a chipElectrostatic surface trap for cold polar molecules on a chip

We propose a simple scheme for trapping cold polar molecules in low-field seeking states on the surface of a chip by using a grounded metal plate and two finite-length charged wires that half embanked in an insulating suhstrate, calculate the electric field distributions generated by our charged-wire layout in free space and the corresponding Stark potentials for ND3 molecules, and analyze the dependence of the trapping center position on the geometric parameters. Moreover, the loading and trapping processes of cold ND3 molecules are studied by using the Monte Carlo method. Our study shows that the loading efficiency of the trap scheme can reach 11.5%, and the corresponding temperature of the trapped cold molecules is about 26.4 inK.     

芯片表面的冷极性分子静电阱与微阱阵列

提出一种利用三根载荷金属杆来实现在芯片表面陷俘冷极性分子的静电阱.给出空间静电场等高线分布.通过调节电极电压操控阱中心距离芯片表面的高度.用经典的蒙特卡罗方法模拟冷分子被装载和囚禁的动力学过程.方案对中心速度为11 m·s^-1的冷分子束,最大装载效率可以达到40%,阱中分子的温度大约为25 mK.方案可以进一步微型化、集成化,形成一维和二维静电微阱阵列,在量子计算、低维物理等方面有应用价值.     

A versatile electrostatic trap with open optical access

A versatile electrostatic trap with open optical access for cold polar molecules in weak-field-seeking state is proposed in this paper. The trap is composed of a pair of disk electrodes and a hexapole. With the help of a finite element software, the spatial distribution of the electrostatic field is calculated. The results indicate that a three-dimensional closed electrostatic trap is formed. Taking ND₃ molecules as an example, the dynamic process of loading and trapping is simulated. The results show that when the velocity of the molecular beam is 10 m/s and the loading time is 0.9964 ms, the maximum loading efficiency reaches 94.25% and the temperature of the trapped molecules reaches about 30.3 mK. A single well can be split into two wells, which is of significant importance to the precision measurement and interference of matter waves. This scheme, in addition, can be further miniaturized to construct one-dimensional, two-dimensional, and three-dimensional spatial electrostatic lattices.     

Electrostatic surface trap for cold polar molecules on a chip

We propose a simple scheme for trapping cold polar molecules in low-field seeking states on the surface of a chip by using a grounded metal plate and two finite-length charged wires that half embanked in an insulating substrate, calculate the electric field distributions generated by our charged-wire layout in free space and the corresponding Stark potentials for ND3 molecules, and analyze the dependence of the trapping center position on the geometric parameters. Moreover, the loading and trapping processes of cold ND3 molecules are studied by using the Monte Carlo method. Our study shows that the loading efficiency of the trap scheme can reach 11.5%, and the corresponding temperature of the trapped cold molecules is about 26.4 mK.     

Combination of multiple tools for surface manipulation of polar molecules

A scheme of surface manipulation and control of polar molecules is proposed, which combines three tools of electrostatic velocity filtering, bunching, and storing. In the scheme, a slow molecular beam is produced from an effusive beam by surface velocity filtering. Then the velocity spread of the slow molecular beam is compressed by a buncher consisting of a series of electrodes. Following that the molecular beam with a narrow velocity spread is stored in a storage ring. Using ND_3 molecule as a tester, the feasibility of our scheme is analyzed theoretically and verified via numerical simulations that cover all three manipulation processes. The results show that cold molecular samples can be prepared from a thermal gas reservoir and stored in the storage ring with more than 10 round trips. Our combined scheme facilitates the production and manipulation of polar molecules, offering new opportunities for basic research and intriguing applications such as quantum information science and cold collisions.     

Theoretical derivation and simulation of a versatile electrostatic trap for cold polar molecules

We propose a versatile electrostatic trap scheme using several charged spherical electrodes and a bias electric held.We hrst give the two-ball scheme and derive the analytical solution of the electric held.In order to make a comparison,we also give the numerical solution calculated by the hnite element software(Ansoft Maxwell).Considering the loading of cold polar molecules into the trap,we give the three-ball scheme.We hrst give the analytical and numerical solutions of the distribution of the electric held.Then we simulate the dynamic process of the loading and trapping cold molecules using the classical Monte Carlo method.We analyze the influence of the velocity of the incident molecular beam and the loading time on the loading efficiency.After that,we give the temperature of the trapped cold molecules.Our study shows that the loading efficiency can reach 82%,and the corresponding temperature of the trapped molecules is about 24.6 mK.At last,we show that the single well divides into two ones by increasing the bias electric held or decreasing the voltages applied to the spherical electrodes.     

在芯片表面囚禁冷极性分子的多功能静电阱EI北大核心CSCD

提出了一种用一对金属平板电容器和4根半埋入绝缘介质的杆电极组成的用于囚禁处于弱场搜寻态的冷极性分子的静电表面阱方案。用有限元软件计算了单阱囚禁时的空间电场分布,发现芯片表面上方2.2 mm左右形成了一个三维封闭的静电阱。选用重氨(ND_3)分子作为测试分子,用经典的蒙特卡罗方法模拟了ND_3分子被装载和囚禁的动力学过程。模拟结果表明,当ND_3分子束中心速度为13m/s、装载时刻为0.576ms时,最大装载效率可达53%,被囚禁的冷极性分子的温度约为35mK;如果继续增大平板电极的电压,则原先的单阱将对称分裂为两个阱,两个阱中的分子数目比为1…1;通过改变中间两个杆电极的电压,可实现非对称分裂,以此来调节两阱中囚禁分子数目比;可实现在0%~100%范围内左阱和右阱的分子数目占总分子数目的比例的调节。该方案为进一步研究三维囚禁型冷极性分子静电表面干涉仪打下基础,对于精密测量和研究物质波干涉有着重要的意义。