BIN PACKING中γm≤1.20的直接证明

ＢＩＮＰＡＣＫＩＮＧ中γ_ｍ≤１．２０的直接证明刘明堂，越民义（中国科学院应用数学研究所，北京１０００８０）ＡＤＩＲＥＣＴＰＲＯＯＦＯＦＴＨＥＩＮＥＱＵＡＬＩＴＹγ_ｍ≤１．２０ＩＮＭＵＬＴＩＰＲＯＣＥＳＳＯＲＳＣＨＥＤＵＬＩＮＧ￥ＬＩＵＭＩＮＧＴＡＮ...     

Two-dimensional models of threshold voltage and subthreshold current for symmetrical double-material double-gate strained Si MOSFETs

The two-dimensional models for symmetrical double-material double-gate(DM-DG) strained Si(s-Si) metal–oxide semiconductor field effect transistors(MOSFETs) are presented. The surface potential and the surface electric field expressions have been obtained by solving Poisson's equation. The models of threshold voltage and subthreshold current are obtained based on the surface potential expression. The surface potential and the surface electric field are compared with those of single-material double-gate(SM-DG) MOSFETs. The effects of different device parameters on the threshold voltage and the subthreshold current are demonstrated. The analytical models give deep insight into the device parameters design. The analytical results obtained from the proposed models show good matching with the simulation results using DESSIS.