A stochastic realization algorithm via block LQ decomposition in Hilbert space

A stochastic realization problem of a stationary stochastic process is re-visited, and a new stochastically balanced realization algorithm is derived in a Hilbert space generated by second-order stationary processes. The present algorithm computes a stochastically balanced realization by means of the singular value decomposition of a weighted block Hankel matrix derived by a “block LQ decomposition”. Extension to a stochastic subspace identification method explains how the proposed abstract algorithm is implemented in system identification.     

Stabilization of bioethanol recovery with silicone rubber‐coated ethanol‐permselective silicalite membranes by controlling the pH of acidic feed solution

In order to produce highly concentrated bioethanol by pervaporation using an ethanol‐permselective silicalite membrane, techniques to suppress adsorption of succinic acid, which is a chief by‐product of ethanol fermentation and causes the deterioration in pervaporation performance, onto the silicalite crystals was investigated. The amount adsorbed increased as the pH of the aqueous succinic acid solution decreased. The pervaporation performance also decreased with decreasing pH when the ternary mixtures of ethanol/water/succinic acid were separated. Using silicalite membranes individually coated with two types of silicone rubber, pervaporation performance was significantly improved in the pH range of 5 to 7, when compared with that of non‐coated silicalite membranes in ternary mixtures of ethanol/water/succinic acid. Moreover, when using a silicalite membrane double‐coated with the two types of silicone rubber, pervaporation performance was stabilized at lower pH values. In the separation of bioethanol by pervaporation using the double‐coated silicalite membrane, removal of accumulated substances having an ultraviolet absorption maximum at approximately 260 nm from the fermentation broth proved to be vital for efficient pervaporation. Copyright © 2005 Society of Chemical Industry     

A high resolution negative working resist,LMR-UV,for g- and i-line lithography

LMR-UV (“low molecular weight resist for uv lithography”), a naphthoquinone-diazide sulfonic acid ester of a novolak resin, is a negative working resist. The mechanism of insolubilization of LMR-UV is based on the facts that the naphthoquinone-diazide moiety is decomposed to indenecarboxylic acid (polar compound) by photolysis upon UV irradiation and that the irradiated resist film insolubilizes in a non-polar developer. LMR-UV reliably forms 0.6 μm lines and spaces over a reflective substrate with steps by using a g-line stepper having a 0.35 NA lens. 0.6 μm-wide aluminum patterns over topography are obtained by use of g-line exposure and reactive ion etching. By use of an i-line aligner (NA = 0.42), LMR-UV resolves 0.25 μm space patterns with overhang profiles. The profiles are due to the large absorption coefficient of 3.8 μm^?1. 0.3 μm wide aluminum patterns are formed by i-line exposure and lift-off metallization.     

Radiation damage induced in Si photodiodes by high-temperature neutron irradiation

Results are presented of a detailed study of the effects of high-temperature 4-MeV neutron irradiation on the performance degradation of Si pin photodiodes together with the radiation-induced defects, observed by deep level transient spectroscopy (DLTS). It was found that the dark current increases after irradiation, while the photocurrent decreases. After irradiation, two majority electron capture levels with (E _c–0.22 eV) and (E _c–0.40 eV) were induced in the n-Si substrate, while one minority hole capture level with (E _v+0.37 eV) was found. Additionally, the degradation of the device performance and the introduction rate of the lattice defects decreases with increasing irradiation temperature. For a 250 °C irradiation, the reduction of the reverse current is only 20% of the starting value. This result suggests that the creation and recovery of the radiation damage proceeds simultaneously at high temperatures.     

Rates for intramolecular excimer formation of poly(α-methylstyrene) measured by using picosecond pulse radiolysis

Summary The rate constants for intramolecular excimer formation, k_DM, of poly(α-methylstyrene) with different molecular weight were determined by using picosecond pulse radiolysis. Values of k_DM for poly(α-methylstyrene) are a little smaller than those for polystyrene with nearly same molecular weight. It appears to be mainly due to steric hindrance by methyl substituent of main chain.     

Involvement of specific mechanism in plasmid DNA uptake by mouse peritoneal macrophages

Lamina-associated polypeptide (LAP)2, which directly interacts with B-type lamins and chromosomes, is an integral membrane protein specifically distributed along the inner nuclear membrane of the nuclear envelope. Multiple regions of its large nucleoplasmic domain promote this localization, including the first (residues 1-296) and the second (residues 298-409) halves of the LAP2 N terminus. The second half is involved in LAP2 association with the nuclear lamina [Furukawa, K., Panté, N., Aebi, U. & Gerace, L. (1995) EMBO J. 14, 1626-1636]. In this study to further define its role, we examined which domain of B-type lamin interacts with LAP2 by means of a binding assay with bacterially expressed proteins and a yeast two-hybrid system. We found that amino acids in the region of residues 78-258 of the lamin B1 rod domain directly bound with LAP2. The data suggest that LAP2 may modulate the assembly of nuclear lamins.     

Stability of tetragonal ZrO2 phase in Al2O3 prepared from Zr-Al organometallic compounds

Zr-Al organometallic compounds have been spray-dried and heated at temperatures 600 to 1400°C to prepare ZrO₂-Al₂O₃ composite powders. The powders consist of balloon-like particles 0.5 to 2 m in diameter with homogeneously dispersed tetragonal ZrO₂ grains 0.1 to 0.2 m in diameter. The tetragonal fraction of ZrO₂ in the composite powders is higher than that in the powders prepared from sols of Zr(OBuⁿ)₄ and Al[OCH(CH₃)₂]₃. The fraction is affected by the organofunctional group in the Zr-Al compounds.Zr(OBuⁿ)₄ = Zr(OC₄Hgⁿ)₄; Al[OCH(CH₃)₂]₃ = Al(OPrⁱ)₃.