Growth of CuInSe2 by metallorganic chemical vapour deposition (MOCVD): new copper precursor

Metallorganic chemical vapour deposition (MOCVD) of Cu-In-Se ternary compounds is performed in a horizontal reactor at atmospheric pressure. A copper precursor has been specially developed for this purpose and is used around room temperature. It is hexafluoroacetylacetonato copper mixed with trimethylamine (Cu(hfa)₂, NMe₃). The other source materials are triethylindium (TEIn), trimethylindium (TMIn) and hydrogen selenide (H₂Se). Experimental parameters are detailed and related to the film composition. Properties of thin films are also investigated in the whole range of compositions obtained.     

Low pressure metalorganic chemical vapor deposition of InP and related compounds

The low pressure metalorganic chemical vapor deposition epitaxial growth and characterization of InP, Ga_0.47In_0.53 As and Ga_xIn_1-xAs_yP_1-y, lattice-matched to InP substrate are described. The layers were found to have the same etch pit density (EPD) as the substrate. The best mobility obtained for InP was 5300 cm² V⁻¹S⁻¹ at 300 K and 58 900 cm² V⁻¹ S⁻¹ at 77₂K, and for GaInAs was 11900 cm² V⁻¹ S⁻¹ at 300 K, 54 600 cm² V⁻¹ S⁻¹ at 77 K and 90 000 cm V⁻¹S⁻¹ at 2°K. We report the first successful growth of a GaInAs-InP superlattice and the enhanced mobility of a two dimensional electron gas at a GaInAs -InP heterojunction grown by LP-MO CVD. LP MO CVD material has been used for GaInAsPInP, DH lasers emitting at 1.3 um and 1.5 um. These devices exhibit a low threshold current, a slightly higher than liquid phase epitaxy devices and a high differential quantum efficiency of 60%. Fundamental transverse mode oscillation has been achieved up to a power outpout of 10 mW. Threshold currents as low as 200 mA dc have been measured for devices with a stripe width of 9 um and a cavity length of 300 um for emission at 1.5 um. Values of T in the range 64–80 C have been obtained. Preliminary life testing has been carried out at room temperature on a few laser diodes (λ = 1.5μm). Operation at constant current for severalthousand hours has been achieved with no change in the threshold current.     

Room temperature CW operation of GaInAsP/InP double heterostructure diode lasers emitting at 1.5 ?m grown by low pressure metalorganic chemical vapour deposition (LP-MO CVD)

Room temperature continuous wave (CW) operation at 1.5 ?m has been achieved in GaInAsP/InP DH lasers fabricated on material grown by low-pressure metalorganic chemical vapour deposition (LP-MO CVD). Threshold currents as low as 200 mA DC have been measured for devices with a stripe width of 9 ?m and a cavity length of 300 ?m. Values of To as high as 64 K have been obtained, where To is defined by the expression Jth(T) = Jth(0) exp (T/To). Fundamental transverse mode oscillation has been achieved up to an output power of 10 mW.     

Estimation of the dynamics and yields of cereals in a semi-arid area using remote sensing and the SAFY growth model

In semi-arid areas, a strongly variable climate represents a major risk for food safety. An operational grain yield forecasting system, which could help decision-makers to make early assessments and plan annual imports, is thus needed. It can be challenging to monitor the crop canopy and production capacity of plants, especially cereals. In this context, the aim of the present study is to analyse the characteristics of two types of irrigated and non-irrigated cereals: barley and wheat. Through the use of a rich database, acquired over a period of two years for more than 30 test fields, and from 20 optical satellite SPOT/HRV images, two research approaches are considered. First, statistical analysis is used to characterize the vegetation’s dynamics and grain yield, based on remotely sensed (satellite) normalized difference vegetation index (NDVI) measurements. A relationship is established between the NDVI and LAI (leaf area index). Different robust relationships (exponential or linear) are established between the satellite NDVI index acquired from SPOT/HRV images, just before the time of maximum growth (April), and grain and straw, for barley and wheat vegetation covers. Following validation of the proposed empirical approaches, yield maps are produced for the studied site. The second approach is based on the application of a Simple Algorithm for Yield Estimation (SAFY) growth model, developed to simulate the dynamics of the LAI and the grain yield. An inter-comparison between ground yield measurements and SAFY model simulations reveals that yields are underestimated by this model. Finally, the combination of multi-temporal satellite measurements with the SAFY model estimations is also proposed for the purposes of yield mapping. Although the results produced by the SAFY model are found to be reasonably well correlated with those determined by satellite measurements (NDVI), the grain yields are nevertheless underestimated.     

Preparation and characterization of In2Se3 thin films

The spray pyrolysis conditions required preparing In₂Se₃ films were optimised. The structural, optical and morphological properties of the films and their evolution are related with the variation of some preparation parameters, which are the substrate temperature and the Se/In molar concentration ratio in the solution.     

GM1 increases the content and mRNA of NGF in the brain of aged rats

Aged (20-22 months old) and young (3 months old) Sprague-Dawley rats were treated with GM1 ganglioside, 30 mg/kg i.p. for 30 days, and the content of nerve growth factor (NGF) and the high-affinity tyrosine receptor kinase (Trk) examined. NGF, estimated by a two-site enzyme immunoassay, was found moderately decreased in the frontal cortex and hippocampus, but not in the striatum of aged animals compared with young animals. The NGF decrease was accompanied by a reduction of NGF mRNA, evaluated by northern blot. Trk protein, determined by western blot with a pan-Trk antibody, was not altered in any region studied in the aged brain. GM1 treatment partially restored NGF and NGF mRNA in frontal cortex and hippocampus in the aged brain, but treatment had no effect on Trk protein. GM1 did not modify any of the parameters investigated in young animals.     

Characteristics of the gas phase in a plasma deposition reactor

We have investigated phenomena occurring in the gas phase during etching of a silicon monocrystal in an epitaxial reactor working at low pressures (0.1-1 Torr). From measurements of the effect of the electric field along the axis of the electrodes, it was determined that the reaction was uniform over the surface. The presence of a stagnant layer above the surface was sought. We found that if it is present this layer does not influence the transfer of matter between the surface and the gas phase. Mass spectra taken during the etching indicated that diffusion is important in relation to the gas flow in the reactor.     

Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility

Mobility in high-k/metal-gate Ultra-Thin Body and Box Fully Depleted SOI devices has been extensively investigated by means of multi-scale simulations and experimental data. Split-CV mobility measurements have been performed for various Interfacial Layer Equivalent Oxide Thickness allowing an investigation of the physical mechanisms responsible for the mobility degradation at high-k/Interfacial layer interface. The impact of the back bias on transport properties is investigated and mobility enhancement in the reverse regime (back gate inversion) is studied. A multi-scale simulation strategy is ranging from quantum Non-equilibrium Green’s Functions to semi-classical Kubo Greenwood approach. These advanced solvers made possible a throughout calibration of empirical TCAD mobility models.     

Low-threshold distributed feedback lasers fabricated on material grown completely by LP-MOCVD

GaInAsP-InP distributed feedback (DFB) lasers emitting at 1.57 μm have been fabricated on material grown completely by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The CW threshold current of 60 mA and an output power of 6 mW per facet at room temperature have been obtained. The lasing wavelength λLunder CW operation showed a temperature coefficient (d_{lambdaL}/dT) of 0.9 Å/°C for this DFB laser over the range of10-90degC. A stable single longitudinal mode was maintained under high speed pulse modulation up to 500 ps, and sinusoidal modulation at 1 Ghz.