Development of Manufacturing Technology of High-Power Gamma-Radiation Sources Based on Low-Leachable Materials with Cesium-137 Radionuclide

Theoretical Foundations of Chemical Engineering - A set of measures to establish the technology for manufacturing highly active sources of γ radiation with an active part from...     

An automated system based on cryogenic probe station for integrated studies of semiconductor light-emitting structures and wafers in the range of 15 to 475 K

An automated system for integrated electrophysical and optical studies of semiconductor nanoheterostructures, which operates in a wide temperature range from 15 to 475 K, is designed. The setup is intended to measure the temperature and frequency admittance and electroluminescence spectra of light-emitting diode and laser chips formed on substrates of diameter up to 50.2 mm, and the distribution of parameters over the wafer. The setup includes the closed-cycle helium cryogenic station, LCR meter, and temperature controller. The characterization results of nanoheterostructures with InGaN/GaN multiple quantum wells, which are used for creating highly efficient white and blue light-emitting diodes, are presented.     

On the Electrochemical Deposition and Properties of Nickel-Based Composite Coatings

Protection of Metals and Physical Chemistry of Surfaces - Nickel-based composite electrochemical coatings (CECs) modified with graphite nitrate have been obtained. Their microstructure and...     

High-efficiency LEDs of 1.6–2.4 µm spectral range for medical diagnostics and environment monitoring

High efficient LED structures covering the spectral range of 1.6–2.4 μm have been developed on the basis of GaSb and its solid solutions. The electroluminescent characteristics and their temperature and current dependences have been studied. The radiative and nonradiative recombination mechanisms and their effect on the quantum efficiency have been investigated. A quantum efficiency of 40–60% has been obtained in the quasi-steady mode at room temperature. A short-pulse optical power of 170 mW was reached. __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 8, 2003, pp. 996–1009. Original Russian Text Copyright ? 2003 by Stoyanov, Zhurtanov, Astakhova, Imenkov, Yakovlev.     

Electronic transport in a type-II GaInAsSb/p-InAs heterojunction with different doping levels of the solid solution

Galvanomagnetic phenomena and photoconductivity in broken-gap type-II GaInAsSb/p-InAs heterojunctions with different levels of doping of the solid solution with donor (Te) or acceptor (Zn) impurities have been investigated. It has been determined that in such structures an electronic channel, which determines the galvanomagnetic effects in a wide range of doping levels, is present at the heterojunction. A sharp decrease of the Hall mobility was observed in the experimental heterostructures with a high level of doping of the epitaxial layer with an acceptor impurity. The observed effect is due to exhaustion of the electronic channel as a result of carrier localization in potential wells at the heterojunction. Fiz. Tekh. Poluprovodn. 31, 897–901 (August 1997)     

On solving systems of ordinary differential equations on MIMD-computers

The error of solution of Cauchy problems for systems of ordinary differential equations is estimated in the case where the input data are approximate. It is shown how to prepare a program for computing the right-hand sides of the system automatically and simultaneously. Diagrams are presented to illustrate the efficiency of parallelization. __________ Translated from Kibernetika i Sistemnyi Analiz, No. 2, pp. 175–182, March–April 2007.     

Spectral and mode characteristics of InAsSbP/InAsSb/InAsSbP lasers in the spectral region near 3.3 µm

The characteristic features of the continuous-wave lasing spectra near 3.3 μm of multimode InAsSbP/InAsSb/InAsSbP double-heterostructure diode lasers are shown. The observation of mode switching to longer and shorter wavelengths at cryogenic temperatures is reported. It is shown that suppression of the longitudinal side modes closest to the main mode results in large mode jumps in energy during mode tuning by current. The characteristics which were observed are explained by gain spectrum inhomogeneity due to spectral hole burning in narrow-gap semiconductors. The intraband charge-carrier relaxation times in the active region are estimated. Fiz. Tekh. Poluprovodn. 39, 1139–1144 (September 1998)