Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

A Convenient Synthesis of Some Coumarin Derivatives Using SnCl2 · 2H2O as Catalyst

Some substituted coumarins have been synthesized by von-Pechmann condensation using SnCl₂ · 2H₂O (10 mol %) as catalyst in ethanolic medium. The reactions are simple, easy in handling and environmentally benign.     

Lipid free radical generation and brain cell membrane alteration following nitric oxide synthase inhibition during cerebral hypoxia in the newborn piglet

Nitric oxide (NO) is reported to cause neuronal damage through various mechanisms. The present study tests the hypothesis that NO synthase inhibition by N(omega)-nitro-L-arginine (NNLA) will result in decreased oxygen-derived free radical production leading to the preservation of cell membrane structure and function during cerebral hypoxia. Ten newborn piglets were pretreated with NNLA (40 mg/kg); five were subjected to hypoxia, whereas the other five were maintained with normoxia. An additional 10 piglets without NNLA treatment underwent the same conditions. Hypoxia was induced with a lowered FiO2 and documented biochemically by decreased cerebral ATP and phosphocreatine levels. Free radicals were detected by using electron spin resonance spectroscopy with a spin trapping technique. Results demonstrated that free radicals, corresponding to alkoxyl radicals, were induced by hypoxia but were inhibited by pretreatment with NNLA before inducing hypoxia. NNLA also inhibited hypoxia-induced generation of conjugated dienes, products of lipid peroxidation. Na+,K+-ATPase activity, an index of cellular membrane function, decreased following hypoxia but was preserved by pretreatment with NNLA. These data demonstrate that during hypoxia NO generates free radicals via peroxynitrite production, presumably causing lipid peroxidation and membrane dysfunction. These results suggest that NO is a potentially limiting factor in the peroxynitrite-mediated lipid peroxidation resulting in membrane injury.     

Freestanding Alumina Membrane by Double-Layer Anodization

A novel method has been developed for fabricating full or partial freestanding anodic alumina. In our method a sacrificial metal layer is introduced between an Al film and a Si₃N₄ substrate. A freestanding alumina film at wafer scale is successfully achieved by anodizing the double metal layer, during which the alumina is spontaneously stripped off the Si₃N₄ substrate due to the anodic oxidation of the sacrificial layer. The barrier oxide of the alumina film is effectively removed either by H₃PO₄ dissolution or by CF₄ reactive ion etching. The freestanding alumina film is utilized as a contact mask to transfer its nanoporous pattern to a Si substrate. By patterning the sacrificial metal layer with contact lithography, a partial freestanding alumina film is successfully achieved on the silicon chip, producing a unique micro/nanofluidic channel. Compared with previous techniques, the method reported here is advantageous for its simplicity and flexibility     

AlGaN/GaN HEMTs-an overview of device operation and applications

Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar. Of the various materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems.     

Concurrent error detection of fault-based side-channel cryptanalysis of 128-bit RC6 block cipher

Fault-based side channel cryptanalysis is very effective against symmetric and asymmetric encryption algorithms. Although straightforward hardware and time redundancy based concurrent error detection (CED) architectures can be used to thwart such attacks, they entail significant overhead (either area or performance). In this paper we investigate two systematic approaches to low-cost, low-latency CED for symmetric encryption algorithm RC6. The proposed techniques have been validated on FPGA implementations of RC6, one of the advanced encryption standard finalists.     

Viscous behaviour of glass-forming liquids: a thermodynamic approach

The temperature dependence of the viscosity of the undercooled melts exhibits an important role in the study of nucleation, crystal growth and the glass-forming ability of materials. Several attempts have been made to study the viscous behaviour of the glass-forming melts and these investigations are mainly based on free volume theory as well as on the configurational entropy model. In the present investigation, an attempt has been made to correlate the thermodynamic parameters with the viscosity of the glass-forming melts and to study the temperature dependence of the viscosity of undercooled liquids on the basis of the free volume theory as well as on the basis of the configurational entropy model of Adam and Gibbs. The entire study is confined on the expression for thermodynamic parameters reported by the authors recently. The expression obtained has been successfully applied to study the temperature dependence of the viscosity of the metallic, molecular and oxide glass-forming liquids.