Comparison of the Crystallization Behavior of Silica Between Mg- and Al-Phosphate Used in Tension Coatings of Grain-Oriented Electrical Steel

Metals and Materials International - The effect of the phosphate component on the thermal stability of tension coatings was investigated with a focus on the crystallization behavior of amorphous...     

Comparison of hole mobility in LOCOS-isolated thin-film SOIp-channel MOSFET's fabricated on various SOI substrates

The hole mobility of LOCOS-isolated thin-film silicon-on-insulator (SOI) p-channel MOSFET's fabricated on SOI substrates with different buried oxide thickness has been investigated. Two types of SOI wafers are used as a substrate: (1) SIMOX wafer with 100-nm buried oxide and (2) bonded SOI wafer with 100-nm buried oxide. Thin-film SOI p-MOSFET's fabricated on SIMOX wafer have hole mobility that is about 10% higher than that on bonded SOI wafer. This is caused by the difference in the stress under which the silicon film is after gate oxidation process. This increased hole mobility leads to the improved propagation delay time by about 10%     

Threshold voltage dependence of LOCOS-isolated thin-film SOINMOSFET on buried oxide thickness

Effects of buried oxide thickness on short-channel effect of LOCOS-isolated thin-film SOI n-MOSFETs have been investigated. Devices fabricated on SOI substrate with thin (100 nm) buried oxide have smaller roll-off of threshold voltage than those fabricated on SOI substrate with thick (400 nm) buried oxide. This is caused by a different boron concentration at the silicon film that results from the difference of stress with the buried oxide thickness. In the case of thin buried oxide, higher volumetric expansion of the field oxide causes higher stress at the interface between the silicon film and the surrounding oxide, including field and buried oxide, which prevents boron atoms from diffusing beyond the interface     

Design and experimental verification of a port plate in a gerotor pump to reduce pressure pulsation

In a gerotor pump, pressure pulsation occurs in a chamber through contact with the internal and external rotors. This causes an overhung load on the pump shaft bearing and cavitation, which affect the durability and noise of the pump. In this study, relief grooves on the port plate were designed to reduce pressure pulsation and verified experimentally. The opening areas between the port plate and chamber with and without relief grooves were obtained. The relation between the pressure pulsation and relief grooves was examined through a simulation and verified experimentally. The results indicated that the relief grooves were very effective at reducing and stabilizing the pressure pulsation of the pump outlet and in the chamber. Thus, installing relief grooves on the port plate can improve the durability of the pump and allow the size of the motor coupled with the pump to be reduced.     

Effect of Asymmetric Hot Rolling on the Texture Evolution of Fe–3%Si Steel

In Fe–3%Si steel, the hot rolling process affects not only the hot rolling texture but also the primary recrystallization texture. Here, the effect of asymmetric hot rolling was studied by comparing the difference in the texture evolved between asymmetric and symmetric hot rolling. The effect of asymmetric hot rolling on the texture of primary recrystallized Fe–3%Si steel was also studied. The symmetric hot rolling of Fe–3%Si steel produces a rotated cube texture at the center but Goss and copper textures near the surface. Asymmetric hot rolling tends to produce Goss and copper textures even at the center like the texture near the surface. After primary recrystallization, the dominant texture at the center changes from {001} <210> to {111} <112> and the new texture has a higher fraction of the grains which make the low energy boundary with Goss grains than that of symmetric hot rolling.     

Ammonia IRMS-TPD Characterization of Brønsted Acid Sites in Medium-pore Zeolites with Different Framework Topologies

Brønsted acidity in a series of zeolites with 8- and/or 10-rings (clinoptilolite, TNU-10, SUZ-4, ZSM-57, ZSM-5, TNU-9, and IM-5) was characterized by the ammonia infrared/mass spectroscopy-temperature-programmed desorption (IRMS-TPD) technique. The zeolites with mutually intersecting 10-ring channels were found to have lower acid strength than those with intersecting 10- and 8-ring channels.     

Hot-carrier degradation behavior of thin-film SOI nMOSFET withisolation scheme and buried oxide thickness

Hot-carrier degradation behavior of thin-film SOI (silicon-on-insulator) nMOSFETs with various isolation techniques and buried oxide (BOX) thickness has been investigated focused on the stress behavior in the SOI structure. LOCOS (local oxidation of silicon) and STI (shallow trench isolation) processes are used as isolation techniques. Buried oxide thickness is 100 and 400 nm, respectively. From the isolation point of view, STI-processed SOI devices have better hot-carrier immunity than LOCOS-isolated SOI devices. In terms of BOX thickness, the thick BOX case has better hot-carrier degradation characteristics than the thin one. It is found that STI process and thick BOX cases induce smaller stress than LOCOS process and thin BOX cases, resulting in better hot-carrier immunity     

Characterization of microstructure and surface oxide of Ti1.2Fe hydrogen storage alloy

In this study, we investigated the microstructures, hydrogen absorption kinetics, and oxide layers of TiFe and Ti_1.2Fe hydrogen storage alloys. Whereas the TiFe alloy has a single phase, the Ti_1.2Fe alloy is composed of three phases: TiFe, Ti₂Fe, and Ti₄Fe. Under no thermal activation process, the TiFe alloy does not absorb hydrogen, though the Ti_1.2Fe alloy starts to absorb hydrogen after 4 min of incubation time. From the XPS results, it is revealed that the Ti concentration in the oxide layer on the Ti₄Fe phase is higher than that on the TiFe phase, indicating that the Ti concentration in the oxide layer would be important in improving hydrogen absorption kinetics. Based on these results, the hydrogen absorption kinetics could be improved by adjusting composition, enabling the formation of a Ti-rich oxide layer.     

Body-contacted SOI MOSFET structure and its application to DRAM

A body-contacted (BC) SOI MOSFET structure without the floating-body effect is proposed and successfully demonstrated. The key idea of the proposed structure is that the field oxide does not consume the silicon film on buried oxide completely, so that the well contact can suppress the body potential increase in SOI MOSFET through the remaining silicon film between the field oxide and buried oxide. The junction capacitance of the proposed structure which ensures high-speed operation can also maintain that of the conventional thin-film SOI MOSFET at about 0.5 V. The measured device characteristics show the suppressed floating-body effect as expected. A 64 Mb SOI DRAM chip with the proposed BC-SOI structure has been also fabricated successfully. As compared with bulk MOSFET's, the proposed SOI MOSFET's have a unique degradation-rate coefficient that increases with increasing stress voltage and have better ESD susceptibility. In addition, it should be noted that the proposed SOI MOSFET's have a fully bulk CMOS compatible layout and process