AIN-SiC固溶体的制备及介电性能

以碳化硅和铝粉为原料,均匀混合后在不同气氛中于2000℃下保温0．5h制得粉体。用X射线衍射分析（XRD）和扫描电子显微镜（SEM）对其进行表征。同时在8．2～12．4GHz频率范围内测试其介电性能。结果表明：在N2气氛中,当铝的含量较少时,未出现AIN物相,当铝含量超过10at%时,AIN相开始出现,并且AIN的含量随着铝含量的增加而增加。掺杂铝样品与未掺杂铝样品相比,其介电常数实部ε′和介电损耗tanδ皆降低,且随着铝含量的增加而逐步降低,主要是因为AIN具有较低的介电常数实部和损耗。     

Aluminum doping and dielectric properties of silicon carbide by CVD

Cubic β-SiC coating was grown onto the graphite substrate by the normal pressure chemical vapor deposition using CH3SiCl3 （MTS） as a source precursor at 1 150 ℃. But the hexagonal Al4SiC4 phase was generated in the doped process with trimethylaluminium （TMA） as the dopant. Microstructure of the deposit coating as-prepared was characterized by scanning electron microscope （SEM）, which consists of spherical particles with a very dense facet structure. The real component of permittivity ε＇ and dielectric loss tang of the coatings undoped and doped by TMA were carried out by a vector network analyzer in the microwave frequency ranges from 8.2 GHz to 12.4 GHz. The results show that both of them have low values, and doped coating has lower ε＇ and tan δ than undoped one due to the existence of Al4SiC4 impurity phase, which indicates that the desired Al/SiC solid solution at 1 150 ℃ in a normal argon atmosphere is not produced.     

棉麻纤维遗态功能材料的制备技术

遗态转化制备技术是以天然生物材料为模板,通过生物结构和形态的遗传、化学组分的变异处理,制备保持自然界生物材料精细结构和形貌的新型功能材料.本文归纳和分析了近年来国内外关于以天然纤维为模板制备遗态材料的研究进展,并对该领域今后的研究和发展提出了一些建议.     

Dielectric properties of doped silicon carbide powder by thermal diffusion

The doped SiC powders were prepared by the thermal diffusion process in nitrogen atmosphere at 2 000℃. Graphite film with holes was used as the protective mask, The dielectric properties of the prepared SiC powders at high frequencies were investigated. The complex permittivity of the undoped and doped SiC powders was measured within the microwave frequency range from 8.2 to 12.4 GHz. The XRD patterns show that before and after heat treatment no new phase appears in the samples of undoped and nitrogen-doped, however, in the aluminum-doped sample the AIN phase appears. At the same time the Raman spectra indicate that after doping the aluminum and nitrogen atoms affect the bond of silicon and carbon. The dielectric real part （ε） and imaginary part （ε＂） of the nitrogen-doped sample are higher than those of the other samples. The reason is that in the nitrogen-doped the N atom substitutes the C position of SiC crystal and induces more carriers and in the nitrogen and aluminum-doped the concentration of carriers and the effect of dielectric relaxation will decrease because of the aluminum and nitrogen contrary dopants.     

真空碳化处理对聚丙烯腈基碳纤维介电性能的影响

将聚丙烯腈基预氧化纤维编织布在真空烧结炉中以10℃/min速率升温到650℃、700℃、750℃、800℃和850℃进行2h保温碳化处理.在固定碳化温度为650℃的情况下,保温10min、2h和4h后随炉冷却至室温.研究了真空碳化处理温度和保温时间对聚丙烯腈基预氧化碳纤维结构、电导率和介电性能的影响,结果表明,经真空碳化处理后,纤维电导率随温度的升高先增大后减小.当碳化温度为650～800℃时,纤维的介电常数实部(ε′)和虚部(ε″)都随碳化处理温度的升高而增大,且虚部的增大速度高于实部的增大速度.当碳化温度高于750℃后,在8.2～12.4GHz内纤维介电常数随频率的增大而减小.当碳化处理温度达到850℃时,纤维的介电常数相对于800℃时有所减小.在650℃,经过不同保温处理的纤维布,随保温时间的延长,纤维的介电常数实部和虚部都增大.根据以上研究结果,可以为制定以经适当碳化处理的纤维布为吸收体的吸波材料提供有效参考.     

超细球形镍粉的制备

在不使用分散剂和表面活性剂的条件下,以水溶液为反应体系,水合肼为还原剂,采用液相还原法制备超细镍粉。通过扫描电子显微镜、X射线衍射仪、激光粒度分析仪、能谱分析仪等测试仪器对粉体进行表征,研究了反应温度和[N₂H₄]/[Ni2+]浓度比对镍粉平均粒径、形貌、分散性、还原率以及纯度的影响,探讨了镍粉从刺球形向球形转变过程中粉体分散性的变化规律。结果表明:在反应温度80 ℃、[N₂H₄]/[Ni2+]=8的条件下,制备的镍粉纯度较高,球形度较好,粒径分布窄,平均粒径为380 nm,且具有较高的还原率。     

化学气相沉积铝掺杂碳化硅的微波介电特性

以三氯甲基硅烷(CH3SiCl3,MTS)为原料,三甲基铝(Al(CH3)3,TMA)为掺杂源,氢气和氩气分别作为两者的载气,氩气同时作为稀释气以常压化学气相沉积在石墨基体上沉积碳化硅涂层.采用XRD、EDS和介电性能测试,结果表明铝已经进入碳化硅晶格中并占据硅的位置,同时引起介电常数实部和虚部有不同程度的增大,这可能是由于SiC中固溶了Al原子,在掺杂后的SiC中形成大量的带电缺陷,这些带电缺陷在电磁波交变电场作用下产生极化耗散电流和强烈的极化弛豫.     

AlN-SiC固溶体的制备及介电性能

以碳化硅和铝粉为原料,均匀混合后在不同气氛中于2000℃下保温0.5h制得粉体.用X射线衍射分析(XRD)和扫描电子显微镜(SEM)对其进行表征.同时在8.2～12.4 GHz频率范围内测试其介电性能.结果表明:在N2气氛中,当铝的含量较少时,未出现AlN物相,当铝含量超过10at%时,AlN相开始出现,并且AlN的含量随着铝含量的增加而增加.掺杂铝样品与未掺杂铝样品相比,其介电常数实部ε'和介电损耗tanδ皆降低,且随着铝含量的增加而逐步降低,主要是因为AlN具有较低的介电常数实部和损耗.     

铜电子浆料的研究发展现状

铜电子浆料中铜粉具有高的导电性且价格低廉容易获得,但是由于其在高温时容易氧化,因此如何提高铜粉的表面抗氧化性成为近年来的研究热点.本文综述了铜电子浆料的发展状况,主要包括导电铜浆的制备;超细铜粉表面氧化原理;铜粉表面改性技术,并对铜粉表面改性技术的不足和铜电子浆料的应用前景进行了展望与总结.