Author Keywords: Radiation detection; Long-lasting phosphor; Luminescence; Temperature dependence; Fade-out effect 相似文献
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Mie Kurosawa Yosuke Shikama Masae Furukawa Rieko Arakaki Naozumi Ishimaru Kenji Matsushita 《International journal of molecular sciences》2021,22(5)
Immunosenescence is characterized by age-associated changes in immunological functions. Although age- and autoimmune-related sialadenitis cause dry mouth (xerostomia), the roles of immunosenescence and cellular senescence in the pathogenesis of sialadenitis remain unknown. We demonstrated that acquired immune cells rather than innate immune cells infiltrated the salivary glands (SG) of aged mice. An analysis of isolated epithelial cells from SG revealed that the expression levels of the chemokine CXCL13 were elevated in aged mice. Senescence-associated T cells (SA-Ts), which secrete large amounts of atypical pro-inflammatory cytokines, are involved in the pathogenesis of metabolic disorders and autoimmune diseases. The present results showed that SA-Ts and B cells, which express the CXCL13 receptor CXCR5, accumulated in the SG of aged mice, particularly females. CD4+ T cells derived from aged mice exhibited stronger in vitro migratory activity toward CXCL13 than those from young mice. In a mouse model of Sjögren’s syndrome (SS), SA-Ts also accumulated in SG, presumably via CXCL12-CXCR4 signaling. Collectively, the present results indicate that SA-Ts accumulate in SG, contribute to the pathogenesis of age- and SS-related sialadenitis by up-regulating chemokines in epithelial cells, and have potential as therapeutic targets for the treatment of xerostomia caused by these types of sialadenitis. 相似文献
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A Oyane M Kasahara N Ichinose Y Yokoyama M Uchida A Ito 《武汉理工大学学报(材料科学英文版)》2005,20(B12):220-222
A synthetic polymer with a laminin-apatite composite layer on its surface would be useful as a percutaneous device. The preparation of such a composite was attempted in the present study using poly( ethylene terephthalate ) (PET) and polyethylene (PE) as the synthetic polymer. PET and PE plates and those pretreated with an oxygen plasma were alternately dipped in calcium and phosphate ion solutions, and then immersed in a metastable calcium phosphate solution supplemented with laminin ( LCP solution ). The PET and PE plates pretreated with an oxygen plasma formed a uniform and continuous layer of a laminin-apatite composite on their surfaces. In contrast, the PET and PE plates that had not been pretreated with an oxygen plasma did not form a continuous layer of a laminin-apatite composite on their surfaces. The hydrophilic functional groups on the PET and PE surfaces introduced by the plasma treatment were responsible for the successful laminin-apatite coruposite coating. 相似文献
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The polarization properties of iodine complex layer deposited by oxidation of poly(vinyl alcohol) (PVA) containing metal iodide were investigated. Heat-resistant polarizing films with high polarization efficiency were produced by oxidizing and stretching the PVA containing metal iodide. The results indicate that i) the polarization efficiency of a polarizing film prepared by oxidation of a PVA film containing 1 mmol or more of potassium iodide (KI)/g PVA at 0°C for 120 s in a 10 wt.-% aqueous solution of H2O2 and a degree of stretching of 400% is high, ii) the heat resistance of the polarizing film in this experiment is higher than that of a filter prepared from a commercial PVA film. 相似文献
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Noda K. Tatsumi T. Uchida T. Nakajima K. Miyamoto H. Chenming Hu 《Electron Devices, IEEE Transactions on》1998,45(4):809-814
A simple fabrication technology for delta-doped MOSFETs, named post-low-energy implanting selective epitaxy (PLISE) is presented. The PLISE technology needs no additional photo-lithography mask, deposition step or etching step even for CMOS devices. The only additional step is growing undoped epitaxial channel layers by UHV-CVD after the channel implantation. With this technology, delta-doped NMOSFETs with 0.1-μm gate length were successfully fabricated. By optimizing the epi-layer thickness and the channel doping level, short-channel effects are suppressed enough to achieve 0.1-μm gate length. Moreover, the junction capacitance at zero bias is reduced by 50% 相似文献
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Munehiko Kowatari Daisuke Koyama Yoshiyuki Satoh Kouichi Iinuma Shunsuke Uchida 《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》2002,480(2-3):431-439
The temperature dependence of luminescence from a long-lasting phosphor (LLP), SrAl2O4 : Eu2+,Dy3+, exposed to ionizing radiation has been measured to understand the LLP luminescence mechanism. Evaluation of the decay constants of the LLP exposed to -, β- or γ-rays at temperatures from 200 to 390 K showed that the decay constant is divided into four components ranging from 10−4 to 10−1 s−1 with activation energies of 0.02–0.35 eV.
Total luminous intensity from the LLP with changing irradiation temperature has its maximum value around the room temperature. Irradiation at elevated temperature (390 K) has the total luminescence pattern with monotonous decrease as temperature rises. As a result of evaluating the temperature dependence of luminescence, the luminescence mechanism is considered as follows:
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Recent developments on fiber-optic devices are reviewed from the local area network (LAN) application viewpoint. Future technical trends are also discussed, along with current research activities. In local area network systems, low device cost and easy maintenance or maintenance-free devices are especially required. Light sources and photodetectors suitable for the systems are described. InGaAsP/InP light emitting diodes can cover a broad application field, up to a gigabits per second super high-speed network region. Optical passive devices, which include branching couplers, switches and connectors, are mentioned as essential components. Compact transmitter/receiver module technology is a key factor in realizing optical-fiber local area network systems. An example of 200-Mbit/s transmitter/receiver module is reported. 相似文献
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