Enhanced photoelectric properties of PbSnSe thin films via quick oxygen ion-implantation sensitization

Journal of Materials Science - Although chalcogenide materials continue to generate considerable interest due to great potentials for various optoelectronic devices, annealing for a long time in...     

Detection of crowdedness in bus compartments based on ResNet algorithm and video images

Multimedia Tools and Applications - The crowding in bus is an important factor affecting passenger satisfaction and bus dispatching level. However, how to use video images to detect crowding...     

用于射频滤波器的LN单晶薄膜XBAR的性能研究

基于铌酸锂(LN)薄膜的横向激发体声波谐振器(XBAR)能够兼具大机电耦合系数(K²)和高谐振频率(f)特性，有望满足5G应用的频段要求。然而，常规LN薄膜单层XBAR结构的温度稳定性较差，频率温度系数(TCF)较低。该文提出一种具有SiO₂温度补偿层的SiO₂/LN双层结构XBAR，并建立了精确分析层状结构XBAR的有限元模型。理论分析表明，该双层结构XBAR上激励的主模式是一阶反对称(A1)兰姆波。通过合理优化结构参数配置，能够获得高谐振频率(f~4.75 GHz)和大机电耦合系数(K²~8%)，同时其温度稳定性也得到显著改善(TCF~-36.1×10^-6/℃)，相较于单层XBAR结构提高了近70×10^-6/℃，这为研制温补型高频、大带宽声学滤波器提供了理论基础。     

Improving gelling properties of myofibrillar proteins incorporating with cellulose micro/nanofibres

The effects of cellulose microfibres (CMFs, Average size: 100 ± 5 μm) and cellulose nanofibres (CNFs, Average size: 60 ± 3 nm) on the properties of myofibrillar protein (MP) gels from duck breast meat were studied. The results demonstrated that CMFs and CNFs were mostly connected to MP by non-covalent bonds, the diffusion and cross-linking of MP molecules was promoted, and a denser and more complete gel network was formed. With the increases of CMFs and CNFs concentration (0–10%), the hardness was increased by 13.15% and 19.78% for CMFs10% and CNFs10% gels, respectively, and the elasticity was increased by 40% and 80%, respectively. At the same concentration (0–10%), the increase in gel hardness, viscoelasticity and immobilised water content was greater in the CNFs-MP group than in the CMFs-MP group. The CNFs-MP group had a tighter gel network, and CNFs had a better potential to improve the gelation performance of MP.     

用于电弧检测的电力专用SoC设计

针对传统的电弧电路故障检测结果不准确的问题,设计用于电弧检测的SoC系统,并且在55nm工艺下进行流片验证。采用包含两种结构的模数转换器的片上电压源,设计了锁相环以及复位电路,精度最高可达8.67 bit。验证结果表明,本设计可提高电弧检测的准确性。