3D Investigation of 8-nm Tapered n-FinFET Model

The miniaturization has become a key word for advanced integrated circuits over the last few years. It is within this context that the fin field effect tra     

Micro-prober for wafer-level low-noise measurements in MOS devices

Low-frequency noise measurements represent an interesting investigation technique for the characterization of the quality and reliability of microelectronic materials and devices. Performing meaningful noise measurements at low and very low (f<1 Hz) frequencies, however, may be quite challenging, particularly because of the many sources of interference that superimpose on the noise signal. For this reason, packaged samples are preferred because they allow accurate shielding from the external environment, and because keeping the sample in close proximity to the low-noise biasing system and amplifier reduces microphonic and electromagnetic disturbances. Notwithstanding this, the possibility of performing low-frequency noise measurements at wafer level would be quite interesting, both because of the ease of obtaining wafer-level samples from industries with respect to packaged samples, and because this would avoid possible packaging-process induced device degradation. The purpose of this work is to demonstrate that it is, in fact, possible to design and build a dedicated probe system for performing high-sensitivity, low-frequency noise measurements on metal-oxide-semiconductor devices at wafer level.     

New insights into the relation between channel hot carrier degradation and oxide breakdown short channel nMOSFETs

In this letter, we report new findings in the relation between channel hot-carrier (CHC) degradation and gate-oxide breakdown (BD) in short-channel nMOSFETS biased at V/sub G/>V/sub D/. We observe that the time-to-BD is strongly reduced in the hot carrier regime and that although the channel hot-electron injection into the oxide occurs mainly at the drain side, stress-induced leakage current (SILC) generation and oxide BD always occur at the source side. The results of these measurements indicate that not solely the energy of the injected electrons but also the oxide electric field is determinant in the oxide BD process.     

The GAUGAA Motif Is Responsible for the Binding between circSMARCA5 and SRSF1 and Related Downstream Effects on Glioblastoma Multiforme Cell Migration and Angiogenic Potential

Circular RNAs (circRNAs) are a large class of RNAs with regulatory functions within cells. We recently showed that circSMARCA5 is a tumor suppressor in glioblastoma multiforme (GBM) and acts as a decoy for Serine and Arginine Rich Splicing Factor 1 (SRSF1) through six predicted binding sites (BSs). Here we characterized RNA motifs functionally involved in the interaction between circSMARCA5 and SRSF1. Three different circSMARCA5 molecules (Mut1, Mut2, Mut3), each mutated in two predicted SRSF1 BSs at once, were obtained through PCR-based replacement of wild-type (WT) BS sequences and cloned in three independent pcDNA3 vectors. Mut1 significantly decreased its capability to interact with SRSF1 as compared to WT, based on the RNA immunoprecipitation assay. In silico analysis through the “Find Individual Motif Occurrences” (FIMO) algorithm showed GAUGAA as an experimentally validated SRSF1 binding motif significantly overrepresented within both predicted SRSF1 BSs mutated in Mut1 (q-value = 0.0011). U87MG and CAS-1, transfected with Mut1, significantly increased their migration with respect to controls transfected with WT, as revealed by the cell exclusion zone assay. Immortalized human brain microvascular endothelial cells (IM-HBMEC) exposed to conditioned medium (CM) harvested from U87MG and CAS-1 transfected with Mut1 significantly sprouted more than those treated with CM harvested from U87MG and CAS-1 transfected with WT, as shown by the tube formation assay. qRT-PCR showed that the intracellular pro- to anti-angiogenic Vascular Endothelial Growth Factor A (VEGFA) mRNA isoform ratio and the amount of total VEGFA mRNA secreted in CM significantly increased in Mut1-transfected CAS-1 as compared to controls transfected with WT. Our data suggest that GAUGAA is the RNA motif responsible for the interaction between circSMARCA5 and SRSF1 as well as for the circSMARCA5-mediated control of GBM cell migration and angiogenic potential.     

Straightforward modeling of dynamic I–V characteristics for microwave FETs

This work presents a straightforward approach aimed at modeling the dynamic I–V characteristics of microwave active solid‐state devices. The drain‐source current generator represents the most significant source of nonlinearity in a transistor and, therefore, its correct modeling is fundamental to predict accurately the current and voltage waveforms under large‐signal operation. The proposed approach relies on using a small set of low‐frequency time‐domain waveform measurements combined with numerical optimization‐based estimation of the nonlinear model parameters. The procedure is applied to a gallium nitride HEMT and silicon FinFET. The effectiveness of the modeling procedure in terms of prediction accuracy and generalization capability is demonstrated by validation of the extracted models under operating conditions different than the ones used for the parameters estimation. Good agreement between measurements and model simulations is achieved for both technologies and in both low‐ and high‐frequency range. © 2013 Wiley Periodicals, Inc. Int J RF and Microwave CAE 24:109–116, 2014.     

Investigation on TG n-FinFET Parameters by Varying Channel Doping Concentration and Gate Length

In this paper, a 3D process of a nanometric n-channel fin field-effect transistor (FinFET) is discussed and the impact of variations of the fin parameter, the gate work function, and doping concentration on device characteristics are studied using the ATLAS Silvaco device simulator. Simulation results for various gate lengths are reported and analyzed. As the quantum effects are pronounced in nanoscale devices, we have included these effects in our study and simulation. We have then compared the achieved results to classical simulations to assess their performance limits. Finally, a comparison of our results with recently published data is presented to confirm our study.     

Gate‐level body biasing for subthreshold logic circuits: analytical modeling and design guidelines

Gate‐level body biasing provides an attractive solution to increase speed and robustness against process and temperature variations while maintaining energy efficiency. In this paper, the behavior of basic logic gates, designed according to the proposed design technique, is analytically examined with the main purpose of furnishing important guidelines to design efficient subthreshold digital circuits. Our modeling has been fully validated by comparing the predicted results with SPICE simulations performed for a commercial 45‐nm complementary metal oxide semiconductor technology. Considering process, temperature and loading capacitance variations, the delay of an inverter is predicted with a maximum error lower than 16.5%. Even better results are obtained when our modeling is applied to more complex logic gates. Under process, loading capacitance and temperature variations, the delay of NAND2 and NOR2 logic gates is always predicted with an error below 10%. Good agreement between the predicted and simulated results makes our modeling a valuable support during the circuit design phase. Copyright © 2014 John Wiley & Sons, Ltd.     

Neural approach for temperature‐dependent modeling of GaN HEMTs

Gallium nitride high electron‐mobility transistors have gained much interest for high‐power and high‐temperature applications at high frequencies. Therefore, there is a need to have the dependence on the temperature included in their models. To meet this challenge, the present study presents a neural approach for extracting a multi‐bias model of a gallium nitride high electron‐mobility transistors including the dependence on the ambient temperature. Accuracy of the developed model is verified by comparing modeling results with measurements. Copyright © 2014 John Wiley & Sons, Ltd.     

Investigation on the non‐quasi‐static effect implementation for millimeter‐wave FET models

The present article analyzes in detail different intrinsic small‐signal models for transistors. Particular attention is devoted to the non‐quasi‐static effects, which play a crucial role at microwave and millimeter‐wave frequencies. The advantages and disadvantages of these different equivalent circuit topologies are analyzed from both theoretical and experimental standpoints. This study clearly proves that best choice among these model representations depends on the specific device technology besides the investigated frequency range. © 2009 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2010.