Optimization of Selective Epitaxial Growth of Silicon in LPCVD

Selective epitaxial growth (SEG) of silicon has attracted considerable attention for its good electrical properties and advantages in building microstructures in high‐density devices. However, SEG problems, such as an unclear process window, selectivity loss, and nonuniformity have often made application difficult. In our study, we derived processing diagrams for SEG from thermodynamics on gas‐phase reactions so that we could predict the SEG process zone for low pressure chemical vapor deposition. In addition, with the help of both the concept of the effective supersaturation ratio and three kinds of E‐beam patterns, we evaluated and controlled selectivity loss and nonuniformity in SEG, which is affected by the loading effect. To optimize the SEG process, we propose two practical methods: One deals with cleaning the wafer, and the other involves inserting dummy active patterns into the wide insulator to prevent the silicon from nucleating.     

Reduction of sodium-accelerated oxidation of silicon nitride ceramics by aluminium implantation

Norton NBD 200 silicon nitride ceramics were implanted with sodium to a dose of 7.0×10¹⁵cm^-2 at 72 keV (1 at% peak sodium content at 100 nm). The sodium-implanted samples were further implanted with aluminium to 7.3×10¹⁵cm^-2 at 87 keV (1 at% peak aluminium content at 100 nm). The implanted and unimplanted samples were oxidized in 1 atm dry oxygen at 1100 and 1300°C for 2–6 h. Profilometry and scanning electron microscopy measurements indicated that sodium implantation led to up to a two-fold increase in the oxidation rate of silicon nitride. The sodium effect was effectively neutralized when aluminium was co-implanted. The opposite effects of sodium and aluminium on the oxidation resistance of silicon nitride can be attributed to their different roles in modifying the structure and properties of the oxide formed. This revised version was published online in November 2006 with corrections to the Cover Date.     

An effective rhodium catalyst system on the synthesis of acetic acid from methyl formate

Rh/Lil/SnR₄ is an effective catalyst system for the conversion of methyl formate to acetic acid under carbon monoxide pressure. The effects of solvent and initial CO partial pressure on the turnover rate of the reaction were investigated. The possibility of replacing some of the iodide promoters by tin compounds has been probed.     

Temporal order and functional analysis of mutations within the Fli-1 and p53 genes during the erythroleukemias induced by F-MuLV

The erythroleukemias induced by Friend murine leukemia virus (F-MuLV) result from the accumulation of a number of genetic changes, including activation of the Fli-1 proto-oncogene and inactivation of the p53 tumor suppressor gene. We have determined the temporal order of mutation of the genes involved in this multistage malignancy, by serial in vivo transplantation of F-MuLV induced primary erythroleukemias into syngenic Balb/c mice. These primary tumors are capable of growing when transplanted into syngenic mice, but die after several days of in vitro culture. From the transplanted tumors grown in syngenic mice, erythropoietin-dependent cell lines were established in culture that are clonally related to cells in the primary tumors. We show that retroviral insertional activation of the Fli-1 ets family member is the first detectable genetic event in F-MuLV induced primary erythroleukemias. Mutations in the p53 gene were observed in the Epo-dependent cell lines but not in the transplanted erythroleukemias used to establish these cell lines in culture. These data suggest that activation of Fli-1 plays an important role in the early stages of F-MuLV-induced leukemia, perhaps by altering the self-renewal probabilities of erythroid progenitor cells and that p53 mutations immortalize these cells, enabling them to grow in vitro in the presence of Epo.     

Static and Dynamic Spins in Superconducting La2−x Sr x CuO4: The Risø Years

One important area of modern condensed matter research is the investigation of the nature of the superconducting cuprates. Much progress in this field has been obtained with the technique of neutron scattering. We here present a review of neutron scattering studies of the high-temperature superconductor La_2?xSr_xCuO₄, performed at Risø National Laboratory. We review the work on the mapping of the incommensurate spin fluctuations, the investigation of the gap in the fluctuation spectrum, the magnetic properties of the vortices appearing in an applied field, and the quantum critical behaviour of the system. We discuss our findings in the light of results of neutron scattering from other groups, on other cuprate systems, and results from other experimental methods, e.g. NMR, μSR, STM, X-ray diffraction, and ARPES. We end with a discussion on the implications of the experimental results for the progress in the general understanding of high-temperature superconductivity. PACS numbers: 61.12.Ex, 74.20.Mn, 74.72.Dn, 75.25.+z, 78.70.Nx.     

Channel-carrier mobility parameters for 4H SiC MOSFETs

In this paper, mobility parameters for enhancement-mode N-channel 4H SiC MOSFETs are extracted and implemented into 2-D device simulation program and SPICE circuit simulator. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide–semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing interface-trap density (D_it) toward the edge of the conduction band is included during the 2-D device simulation. Using measured distribution of interface-trap density for simulation of the transfer characteristics leads to a good agreement with the experimental transfer characteristic.     

High-Temperature Deformation and Microstructural Analysis for Silicon Nitride–Scandium (III) Oxide

Limited past studies have indicated that Si₃N₄ doped with Sc₂O₃ may exhibit high-temperature mechanical properties superior to Si₃N₄ systems with various other oxide sintering additives. High-temperature deformation of this system was studied by characterizing the microstructures before and after deformation. It was found that elements of the additive, Sc and O, exist in small amounts at thin grain boundary layers and within secondary phases at triple and multiple grain boundary junctions. The secondary phase is devitrified as crystalline Sc₂Si₂O₇. Deformation of the samples was dominated by cavitation rather than dislocation processes. Thus, the excellent deformation resistance of the samples at high temperature can be attributed to the high refractories and enhanced crystallization of a secondary phase.     

Electrical and optical studies of ZnO:Ga thin films fabricated via the sol–gel technique

The effects of dopant (Ga) concentration, post-heat treatment temperatures, and different heat treatment environments on the morphology, electrical and optical properties of ZnO films were studied. ZnO films doped with Ga are derived from non-alkoxide zinc acetate via the alcoholic route by a sol–gel dip-coating technique. Introduction of Ga, as a dopant, can reduce crystallite size, which is attributed to the increased number of nucleation centers. Grain growth was also observed at high post-heat treatment temperature. It was discovered that different post-heat treatment environments (air or reduced atmosphere) did not change the structure orientation, microstructure shapes and size. It was found that the sheet resistance, R_s could be reduced by an order of magnitude, using post-heat treatment in reduced atmosphere (4%H₂–96%N₂).