Single display gamut size metric

To measure the relative gamut sizes of wide‐gamut displays, it is herein proposed that the CIE 1931 xy chromaticity diagram be used rather than the nominally perceptually uniform CIE 1976 u′v′ chromaticity diagram. High correlations were found between the area‐coverage ratios in the xy diagram and the volume‐coverage ratios in the CIE 1976 L^*a^*b^* color space for major standard wide‐gamut color spaces. It is also demonstrated herein that performing planimetry in the uniform u′v′ diagram does not yield accurate relative display gamut sizes, even though the large sizes obtained using the u′v′ diagram are often reported regardless of the fact that its uniformity is valid only when the luminance factor is constant. The single display gamut size metric using the xy diagram will facilitate the unbiased development of wide‐gamut displays.     

Analysis of standard chromaticity gamut area metrics

It is herein proposed to measure display gamut sizes by employing the International Telecommunication Union—Radiocommunication Sector Recommendation BT.2020 (Rec. 2020) area‐coverage ratios in the xy chromaticity diagram rather than the standard gamut area metrics that use the horseshoe‐shaped spectrum chromaticity area as the target in the u′v′ chromaticity diagram. It is more reasonable to use the Rec. 2020 gamut than the spectrum gamut as the target because the Rec. 2020 area‐coverage ratios in the xy diagram are better correlated than the spectrum area‐coverage ratios with the volume‐coverage ratios of object color gamuts that are visually significant in displaying natural scenes.     

Active sensing control improving SLAM accuracy for a vehicle robot

Artificial Life and Robotics - This study considers an autonomous mobile vehicle using SLAM technology in an unknown environment. The focused problem is the decrease of trajectory following...     

Organic–inorganic nanomatrix structure and properties of related naturally occurring rubbery macromolecules

The outstanding mechanical properties of soft materials i.e. natural rubber are partly due to the organic–inorganic nanomatrix structure because numerous organic microparticles are dispersed in a small amount of an inorganic nanomatrix composed of inorganic nanoparticles and organic macromolecules. Here we form an organic–inorganic nanomatrix using graft-copolymerization of a vinyl monomer with an inorganic oxide precursor onto natural rubber particles with an average diameter of 1 μm dispersed in water. The inorganic oxide precursor is converted into inorganic oxide nanoparticles through hydrolysis and condensation, forming chemical linkages between natural rubber microparticles and inorganic oxide nanoparticles. Transmission electron microscopy indicates that the organic–inorganic nanomatrix is densely filled with inorganic oxide nanoparticles and the natural rubber microparticles are dispersed in the nanomatrix. This nanomatrix composite realizes both energetic elasticity and entropic elasticity of a soft material, opening a novel field of building block chemistry with respect to a pair of organic microparticles and inorganic nanoparticles.     

Study of all-optical clock recovery performance by the primary and the secondary temporal Talbot effects in a second-order dispersive medium

We theoretically and experimentally study the all-optical clock recovery performance using the primary or the secondary temporal Talbot effects (PTTE or STTE, respectively) in a dispersive medium having the first-order dispersion together with the second-order dispersion (e.g., conventional single-mode fibers: SMFs). Our preliminary numerical simulations have indicated that the STTE-based all-optical clock recovery technique can improve double its performance as compared with the conventional PTTE-based technique when the second-order dispersion (dispersion slope) can be neglected. The following simulation results have revealed that the second-order dispersion, that the normal SMFs possess, limits the performance improvements in the STTE-based clock recovery, whereas the limited performance can be improved by appropriately compensating for the second-order dispersion. On the basis of our simulation results, experiments of the STTE-based clock recovery were conducted by compensating for the second-order dispersion of SMFs used as dispersive media. To be specific, SMFs’ second-order dispersion has been reduced to the one-sixteenth of its original value by combining with the reverse-dispersion fibers (RDFs) which can provide the second-order dispersion of the opposite sign to the SMFs. As a result, the performance improvements in the STTE-based clock recovery was demonstrated so that the 10-GHz clear optical clock pulses were successfully recovered from 10-Gbit/s return-to-zero (RZ) pseudo-random bit sequence (PRBS) optical signals.     

Risk assessment of airborne fine particles and nanoparticles

Pulmonary health effects of fine particles and nanoparticles are overviewed in this paper, mainly based on the researches conducting in our laboratory. For the hazard assessment, we exposed rats to aerosolized asbestos-substitutes or nanoparticles aerosols (nickel oxide and titanium dioxide), and examined the biological and pathological effects of the particle on lung, a major target organ for the particles, and cytokines which are related to inflammation, fibrosis and carcinogenesis in the lung. It is essential to perform comprehensive evaluation of the toxicity of poorly soluble powder samples using the precise characterization data and exposure methods, such as single instillation or aerosol inhalation.     

To develop a quantitative method for predicting shrinkage porosity in squeeze casting

In order to secure high strength and high elongation of suspension parts, it is critical to predict shrinkage porosity quantitatively. A new simulation method for quantitative predic'don of shrinkage porosity when replenishing molten metal has been proposed for squeeze casting process. To examine the accuracy of the calculation model, the proposed method was applied to a plate model.     

Temporal-Talbot-effect-based preprocessing for pattern-effect reduction in all-optical clock recovery using a semiconductor-optical-amplifier-based fiber ring laser

We propose and experimentally demonstrate the temporal-Talbot-effect (TTE)-based preprocessing for the pattern-effect reduction in the all-optical clock recovery using a semiconductor-optical-amplifier (SOA)-based fiber ring laser (SOA-FRL). The TTE-based preprocessing successfully reduced the pattern effects of the recovered clock pulses, so that the 10-GHz clear optical clock pulses were recovered from a 10-Gbit/s return-to-zero on–off keying (RZ-OOK) pseudo-random bit sequence (PRBS) optical signal. “Peak variation” and “Pattern-dependent intensity noise (PDIN)” were proposed and were utilized as parameters to quantitatively evaluate the pattern effects, from which recovered clock pulses suffer, in the temporal domain and the frequency domain, respectively. Peak variation was reduced from 77.2% to 36.2%, and PDIN was improved from ?103 dBc/Hz to ?110 dBc/Hz with the aid of the TTE-based preprocessing. Furthermore, we examined the tolerance of the proposed technique by intentionally deviating the input signal’s bit-rate by ±190 Mbit/s (±2% of the bit-rate) from the optimum condition for the TTE. As compared with the PDIN value for the pulse train obtained by the direct injection of the non-processed signal into the SOA-FRL, the PDIN of the recovered clock pulses using the preprocessed signal indicated improvements over the entire measurement range of ±190 Mbit/s, which corresponds to the wavelength-dispersion deviation of ±56 ps/nm (±4% of the wavelength-dispersion applied to the input signal) from the optimum value.     

Advanced fabrication technologies of integrated-type structure for a-Si solar cells

This paper proposes a new advanced fabrication technology for a low-cost integrated-type a-Si solar cell. Integrated-type cells provide many advantages and have been industrialized with a laser patterning method. However, a higher throughput and more efficient patterning method was required for applying a-Si solar cells to a power generating system. Plasma CVM (Chemical Vaporization Machining) was first applied to advanced patterning because of its advantages of high speed and selectivity. In this method, a plasma generated under high pressure localizes near the wire electrode and concentrates reactive radicals. As a result, we achieved an etching rate of more than 1 μm/s and selective patterning of a 200 μm-wide a-Si layer in 1 s multiline patterning was also developed for large-area modules.