Successive pattern classification based on test feature classifier and its application to defect image classification

A novel successive learning algorithm based on a Test Feature Classifier is proposed for efficient handling of sequentially provided training data. The fundamental characteristics of the successive learning are considered. In the learning, after recognition of a set of unknown data by a classifier, they are fed into the classifier in order to obtain a modified performance. An efficient algorithm is proposed for the incremental definition of prime tests which are irreducible combinations of features and capable of classifying training patterns into correct classes. Four strategies for addition of training patterns are investigated with respect to their precision and performance using real pattern data. A real-world problem of classification of defects on wafer images has been dealt with by the proposed classifier, obtaining excellent performance even through efficient addition strategies.     

Total emission control for managing regional water quality: a game theoretic decision process

A simple game theoretic model with hierarchical structure is developed for regulating the total amount of pollutant discharged by all the effluent producers in a given region, where the allowable limit on total emission, that is the environmental carrying capacity, is assumed to be given. It is proposed that the total emission is to be allocated amongst all the polluters so as to maximize the social benefit, and that the social benefit is to be allocated through taxation on the companies under the criterion of impartiality. The concept of impartiality is defined as equal individual satisfaction for the polluters who cooperate. This concept is applied to solve the characteristic function game. A numerical example is included.     

Interannual variations in vegetation activities and climate variability caused by ENSO in tropical rainforests

Interannual variations in terrestrial carbon cycle over tropical rainforests affect the global carbon cycle. Terrestrial ecosystem models show the interannual relationship between climate changes due to El Niño‐Southern Oscillation (ENSO) and net primary production over tropical rainforests. However, we need an independent analysis using satellite‐based vegetation index and climate parameters. In the present study, we extracted the ENSO‐related interannual variations from time‐series in Normalized Difference Vegetation Index (NDVI) and climate data from 1981 to 2000, and analysed their relevance. We detected relationships among NDVI, ENSO, and climate parameters from long‐term data with negative NDVI–ENSO, NDVI–temperature, and positive NDVI–precipitation relations. These correlations suggest that interannual variability in vegetation activities over tropical rainforests could be extracted from NDVI time‐series despite noise components in NDVI data, and that interannual changes in precipitation and temperature caused by ENSO play a more important role in vegetation activities over tropical rainforests than in incoming surface solar radiation.     

Transient power characteristics of balanced three‐phase variable inductance

Inductance has a particularly important role in power circuits. The authors have proposed the Variable Active–Passive Reactance (VAPAR), which can produce a virtual variable inductance. In this paper, the transient power characteristics of a balanced three‐phase variable inductance are analyzed using the instantaneous active and reactive power theorem. With an ideal voltage source or an ideal current source connected to a balanced three‐phase variable inductance, the transient power characteristics are analyzed theoretically, and then the results are verified through simulations. In the other cases, it is difficult to solve for the transient power, but it is shown that the transient power characteristics can easily be estimated from the results of simulations in which an ideal voltage source or an ideal current source is connected to a balanced three‐phase variable inductance. Experiments are also carried out to verify the theoretical analysis and simulations. © 2001 Scripta Technica, Electr Eng Jpn, 136(2): 49–57, 2001     

Solid-State Polymerization Behavior of 1,3-Bis(3-quinolyl)-1,4-butadiyne

Summary 1,4-Bis(3-quinolyl)-1,3-butadiyne (DQ) is known to be polymerized in solid state to give the corresponding polydiacetylene. However, the polymer yield of DQ bulk crystals is low. Thus, we prepared several types of DQ crystals by different procedures to find the reason for the low polymer yield. We found three modifications of DQ crystals and they were evaluated by spectroscopic measurements and X-ray diffraction. DQ bulk crystals (Crystal I) and thermally grown DQ crystals on Crystal I (Crystal II) have the same structure classified to Type A, which gives regular polydiacetylene structure in low polymer yields. DQ crystals grown on glass plates by sublimation (Crystal III) belong to the second modification of Type B. DQ nanocrystals prepared by the reprecipitation method (Crystal IV) are Type B, and thermally grown DQ crystals on nanocrystals (Crystal V) are Type C. Crystals of Types B and C could be polymerized in low yields without showing excitonic absorption of polydiacetylene indicating irregular polymerization other than 1,4-addition. For crystals of Type A, we found that the 1,4-addition polymerization proceeded only in near-surface portions of the crystals. It can be plausibly explained that mobile monomers in the near-surface portion are only able to take part in their polymerization, resulting in low polymer conversion.     

Active-passive power circuit

The recent development of a semiconductor device technology realizes small-size, lightweight, high performance power switching devices. However, reactive elements such as an inductor or a PWM inverter achieves high-performance current control, which is applied to the active filter, and so on [2, 4]. If a compact and high efficient reactive component is developed, the power converter technology may drastically change the application field. In this paper, the concept of variable active-passive reactance (VAPAR) which consists of an inverter and passive elements is proposed. The VAPAR behaves like a two-terminal reactive element and the produced active reactance component works as a passive reactive component, including in transient state. The principle of VAPAR and two possible control schemes to realize VAPAR are realized. Through simulations and experiments, it is verified that VAPAR shows reactive characteristics not only in steady state, but also in transient state, as proposed, and basic characteristics of both control schemes are clarified.     

Rendering of specular surfaces in polygon-based computer-generated holograms

A technique is presented for realistic rendering in polygon-based computer-generated holograms (CGHs). In this technique, the spatial spectrum of the reflected light is modified to imitate specular reflection. The spectral envelopes of the reflected light are fitted to a spectral shape based on the Phong reflection model used in computer graphics. The technique features fast computation of the field of objects, composed of many specular polygons, and is applicable to creating high-definition CGHs with several billions of pixels. An actual high-definition CGH is created using the proposed technique and is demonstrated for verification of the optical reconstruction of specular surfaces.     

AIGaAsSb Buffer/Barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliability

InAs/AlGaAsSb deep quantum well was successfully formed on GaAs substrate and examined for two electron devices, Hall elements (HEs), and field-effect transistors (FETs). With a thin buffer layer of 600 nm AIGaAsSb on GaAs substrate, we observed high electron mobility more than 23000 cm²/Vs and extrinsic effective electron velocity of 2.2 x 10⁷ cm/s for a 15 nm thick InAs channel at room temperature. AIGaAsSb lattice matched to InAs was discussed from the view points of insulating property, carrier confinement, and oxidization rate. Reliability data good enough for practical use were also obtained for HEs. We demonstrated AIGaAsSb as a promising buffer/barrier layers for InAs channel devices on GaAs substrate, and we discussed the possible advantages of AIGaAsSb also for InGaAs FETs.     

Connecting dopant bond type with electronic structure in N-doped graphene

Robust methods to tune the unique electronic properties of graphene by chemical modification are in great demand due to the potential of the two dimensional material to impact a range of device applications. Here we show that carbon and nitrogen core-level resonant X-ray spectroscopy is a sensitive probe of chemical bonding and electronic structure of chemical dopants introduced in single-sheet graphene films. In conjunction with density functional theory based calculations, we are able to obtain a detailed picture of bond types and electronic structure in graphene doped with nitrogen at the sub-percent level. We show that different N-bond types, including graphitic, pyridinic, and nitrilic, can exist in a single, dilutely N-doped graphene sheet. We show that these various bond types have profoundly different effects on the carrier concentration, indicating that control over the dopant bond type is a crucial requirement in advancing graphene electronics.