Novel level-identifying circuit for flash multilevel memories

This paper presents a high-speed, small-area circuit specifically designed to identify the levels in the read out operation of a flash multilevel memory. The circuit is based on the analog computation of the Euclidean distance between the current read out from a memory cell and the reference currents that represent the different logic levels. An experimental version of the circuit has been integrated in a standard double-metal 0.7-μm CMOS process with a die area of only 140×100 μm². Operating under a 5-V power supply, this circuit identifies the read-out current of a memory cell, and associates it with the appropriate logic level in 9 ns     

An easy-to-use mismatch model for the MOS transistor

In this paper, a physics-based mismatch model is presented. It is demonstrated on a 0.18-/spl mu/m technology that a simple mismatch model can still be used to characterize deep-submicron technologies. The accuracy of the model is examined and found to be within 20% in the strong inversion region. Bulk bias dependence is modeled in a physical way. To extract the mismatch parameters, a weighted fit is introduced. It is shown that the width and length dependence of the mismatch parameters is given by the Pelgrom model.     

Parameter extraction on MOSFET transistors using a new optimised fit strategy

Classical parameter-extraction programs rely on the minimisation of the relative current deviation. However, since, especially for analogue applications, the slope of the IDS/VDS curve in the saturation region is at least equally important, a new fit strategy has been developed. This new fit strategy extracts a parameter set which optimises the current residual as well as the slope residual at every point.     

ESD–RF co-design methodology for the state of the art RF-CMOS blocks

This paper describes an approach to design ESD protection for integrated low noise amplifier (LNA) circuits used in narrowband transceiver front-ends. The RF constraints on the implementation of ESD protection devices are relaxed by co-designing the RF and the ESD blocks, considering them as one single circuit to optimise. The method is applied for the design of 0.25 μm CMOS LNA. Circuit protection levels higher than 3 kV HBM stress are achieved using conventional highly capacitive ggNMOS snapback devices. The methodology can be extended to other RF-CMOS circuits requiring ESD protection by merging the ESD devices in the functionality of the corresponding matching blocks.     

Origin of the threshold voltage instability in SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics

The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.     

On the hot-carrier-induced post-stress interface trap generation inn-channel MOS transistors

A continued fast interface trap generation is observed in n-channel MOS transistors after termination of the hot-carrier stress. The magnitude of this post-stress effect is strongly dependent on the conditions of the preceding stress, on the post-stress conditions and on the process parameters. For measurements at 293 K, a simple model is proposed which is based on the release of hydrogen by the thermal detrapping of holes, and which can explain the observed dependencies. The importance of the post-stress D_it-generation is illustrated for the case of dynamic stress conditions where it can lead to an apparently deviating degradation behavior     

Nuclear cardiology, Part III: Scintigraphic evaluation of cardiac perfusion

OBJECTIVE: After reading Part III of this series of nuclear cardiology articles, the technologist should be able to: (a) compare and contrast radiopharmaceuticals used for myocardial perfusion imaging; (b) describe imaging protocols used for detecting coronary artery disease; and (c) describe imaging patterns seen following reconstruction of myocardial images.     

Modification of the porosity of pillared clays by carbon deposition. I. Polymer carbonization

In order to use pillared clays (PILC) for selective adsorption, further modifications of the porous structure are necessary. The deposition of carbon residues onto the porous structure of pillared clays by the carbonization of polymers (polyvinylalcohol) was proposed to achieve a controlled modification of the pore size. Ti and Al-pillared clays (calcined and non-calcined) were impregnated with PVA (different grades and different concentrations and subsequently carbonized to form carbon phases. The effect of the carbon deposits on the porosity of Ti- and Al-PILC is discussed in terms of pore-blocking, pore-filling and pore-narrowing. The deposition of carbon using PVA resulted in a complete pore-blocking for Al-PILC and in a narrowing of the pore size distribution for Ti-PILC, without achieving a controlled pore-narrowing.     

The pragmatic quality of Resources‐ Events‐Agents diagrams: an experimental evaluation

The Resources‐Events‐Agents (REA) model is a semantic data model for the development of enterprise information systems. Although this model has been proposed as a benchmark for enterprise information modelling, only few studies have attempted to empirically validate the claimed benefits of REA modelling. Moreover, these studies focused on the evaluation of REA‐based system implementations rather than directly assessing the REA‐modelled conceptual schemas that these systems are based on. This paper presents a laboratory experiment that measured the user understanding of diagrammatic conceptual schemas developed using the REA model. The theoretical foundation for the hypotheses are cognitive theories that explain pattern recognition phenomena and the resulting reduction in cognitive effort for understanding conceptual schemas. The results of the experiment indicate a more accurate understanding of the business processes and policies modelled when users recognize the REA model’s core pattern of enterprise information in the diagram. The implication for modelling practice is that the use of the REA model improves the requirements engineering process by facilitating the user validation of conceptual schemas produced by analysts, and thus helps ensuring the quality of the enterprise information system that is developed or implemented.     

Ester-functionalized poly(3-alkylthiophene) copolymers: Synthesis,physicochemical characterization and performance in bulk heterojunction organic solar cells

The introduction of functional moieties in the donor polymer (side chains) offers a potential pathway toward selective modification of the nanomorphology of conjugated polymer:fullerene active layer blends applied in bulk heterojunction organic photovoltaics, pursuing morphology control and solar cell stability. For this purpose, two types of poly(3-alkylthiophene) random copolymers, incorporating different amounts (10/30/50%) of ester-functionalized side chains, were efficiently synthesized using the Rieke method. The solar cell performance of the functionalized copolymers was evaluated and compared to the pristine P3HT:PCBM system. It was observed that the physicochemical and opto-electronic characteristics of the polythiophene donor material can be modified to a certain extent via copolymerization without (too much) jeopardizing the OPV efficiency, as far as the functionalized side chains are introduced in a moderate ratio (<30%) and that preference is given to side chains with a small molar volume. A range of complementary techniques – UV–Vis spectroscopy, (modulated temperature) differential scanning calorimetry, transmission electron microscopy and X-ray diffraction analysis – indicated that variations in polymer crystallinity, while maintaining a high level of regioregularity, are probably the main factor responsible for the observed differences.