High speed p-type SiGe modulation-doped field-effect transistors

We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFETs) with 0.7-μm and 1-μm gate-lengths having unity current-gain cut-off frequencies (f_T) of 9.5 GHz and 5.3 GHz, respectively. The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The dc maximum extrinsic transconductance (g_m) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-μm gate length devices. The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few μA/mm at room temperature and a few nA/mm at 77 K     

Photoreactivation of Escherichia coli following medium-pressure ultraviolet disinfection and its control using chloramination.

Ultraviolet (UV) disinfection is becoming increasingly popular as an alternative disinfection technology to chlorination in recent years. In this study, we investigated the photoreactivation of Escherichia coli following medium-pressure (MP) UV disinfection of synthetic water by a bench-scale collimated beam apparatus. The UV doses ranged from 1.6 -19.7 mWs/cm2 and photoreactivation was investigated for 6 hours under fluorescent light. In addition, chloramination was applied after UV disinfection to investigate its ability to control photoreactivation. It was found that photoreactivation occurred for all UV doses tested and the increase in bacteria numbers ranged from 0.04 to 1.35 log10. However, the degree of photoreactivation decreased with increased UV doses. Chloramination experiments revealed that the addition of 0.5 mg/l of monochloramine resulted in suppression of photoreactivation for 1 hour only. An increased monochloramine dose of 1 mg/l was found to prevent photoreactivation for the entire duration of the experiment. The results of this study have shown that photoreactivation occurs even after MP UV disinfection, although it is of a lesser extent at higher UV doses. This study has also established that secondary chloramination can effectively suppress and eliminate photoreactivation with a chloramine dose of 1 mg/l.     

A multilevel soliton communication system

A multilevel soliton communication system is proposed and assessed. In this system, at the transmitter end each channel transmits its data via fundamental solitons with a pre-specified amplitude (i.e., soliton width). At the receiver end we take advantage of the sensitive relationship between the amount or fundamental soliton self-wavelength shift and the width of the soliton in the subpicosecond region. We first compress the incoming soliton noises to the subpicosecond level and pass them through a short length of fiber at the end of which the pulses have become separated in the wavelength domain since each soliton, corresponding to a data channel, has experienced a different Raman self-wavelength shift. The channels are then easily separated by optical filters. We have derived the design constraint relations for such a system. We have then heuristically designed a 40 Gbs (four channels) system for a 1000 km propagation distance (total data-rate distance product of 40 Tb/km). Numerical simulations and noise analyses have verified the feasibility and practicality of the proposed system with very good design margins. The wavelength jitter is found to be much smaller than the desired filter spacing, and thus its contribution to the bit error rate is negligible. We also argue that the system is more tolerant to Gordon-Haus timing jitter than conventional TDM soliton systems. The system is all fiber and is, therefore very cost effective as it does not require sophisticated electro-optic and microwave circuits for demultiplexing. The system can potentially operate at much higher speeds than those achievable in conventional soliton systems and it can be used in parallel with WDM soliton system     

传输线衰减常数与柱形谐振器Q值的关系

文中严格地讨论了任意截面形状，任意模式的柱形谐振腔Ｑ值与构成该谐振器的传输线衰减常数间的关系，给出了更一般的公式，推广了Ｄａｖｉｄｓｏｎ和Ｓｉｍ－ｍｏｎｄｓ＾［１］、Ｂａｒｌｏｗ和Ｃｕｌｌｅｎ＾［２］以及Ｙｅｈ和Ｓｈｉｍａｂｕｋｕｒｏ＾［３，４］的结果。     

淀积条件对GDa—SiNx薄膜电学特性的影响

本文讨论了用辉光放电法制备氮化硅薄膜时衬底温度、射频功率和气体流量比对薄膜的电导率、介电常数和击穿强度的影响。通过优化生长条件，制备了优质非晶氮化硅薄膜，其介电常数为７．５、击穿强度为５．５ＭＶ／ｃｍ、电导率为１０－１３（Ωｃｍ）－１。     

Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors

In this letter, we report on the electrical characteristic and the comparison of the metal-insulator-metal (MIM) capacitors with PECVD silicon nitride (SiN) and silicon oxynitride (SiON). Both capacitors are found to exhibit low leakage and high breakdown field strength, as well as absence of dispersive behavior, good linearity, and comparable quality factor behaviors.     

High-transconductance n-type Si/SiGe modulation-doped field-effecttransistors

The authors report on the fabrication and the resultant device characteristics of the first 0.25-μm gate-length field-effect transistor based on n-type modulation-doped Si/SiGe. Prepared using ultrahigh vacuum/chemical vapor deposition (UHV/CVD), the mobility and electron sheet charge density in the strained Si channel are 1500 (9500) cm²/V-s and 2.5×10¹² (1.5×10¹² ) cm^-2 at 300 K (77 K). At 77 K, the devices have a current and transconductance of 325 mA/mm and 600 mS/mm, respectively. These values far exceed those found in Si MESFETs and are comparable to the best results achieved in GaAs/AlGaAs modulation-doped transistors     

Effect of incipient removal of hydrogen through palladium membrane on the conversion of methane steam reforming: Experimental and modeling

This paper presents a mathematical model based on the reaction rate expressions to describe the displacement of methane conversion in the steam reforming. The effect of several parameters including weight hourly space velocity (WHSV), load-to-surface ratio, reaction pressure, hydrogen partial pressure in permeate side and reaction temperature were investigated. Simulation and experimental results showed that a conversion higher than 80% could be achieved in a palladium membrane reactor at reaction temperature of 500 °C relative to 850 °C in a conventional fixed bed reactor (FBR). Besides, the yield of CO (<2%) in membrane reactor was much lower than that (>50%) in the FBR, which indicated the significant depression of CO production in use of membrane reactor.     

Satellite-Based Water Quality Mapping from Sequential Simulation with Parameter Outlier Removal

The satellite-based regression model provides the data model that identifies water quality for inland and coastal waters. However, the satellite regression usually depends on the selection of observation, satellite data, and model type. A resampling simulation technique, such as sequential simulation using geographically weighted regression (GWR simulation), can be applied in generating multiple realizations for water quality estimation to reduce the sampling effect and consider spatial heterogeneity. Traditional models often result in considerable underestimation in extreme observations. The GWR simulation provides the best goodness of fit and spatial varying relationship between observed water quality and remote sensing considering parameter outlier and noise removal for parameter stability. This simulation model can increase the sampling diversity from various observations and reduce the neighboring effects of observations using outlier and noise removal. The model that handles spatial uncertainty and heterogeneity is a novel tool for inferring the characteristics of water quality from a series of sample subsets.