D38R突变对细菌视紫红质光循环后半程M态和N态的影响

用重叠PCR的方法，定点突变细菌视紫红质（bacteriorhodopsin，BR），克隆到单突变体BRD96N和双突变体BRD38R/D96N的基因，同源转化盐沼盐杆菌（Halobacterium salinarium）L33（BR），表达突变蛋白BRD96N和BRD38R／D96N通过显微视频方法对突变BR的M态光致变色特性进行记录，BRD38R／D96N的M态寿命为5s，约为BRD96N（M态寿命为3s）的1．7倍．对突变体的激光共聚焦拉曼光谱测定发现，在BRD96N中，1170cm^-1下移到1171cm^-1，1258cm^-1上移到1255cm^-1，而BRD38R/D96N中1170cm^-1下移到1173cm^-1；1258cm^-1。上移到1252cm^-1，而且BRD38R/D96N与BRD96N相比，1186cm^-1处的峰明显增强．近紫外区圆二色谱显示，两种突变体近紫外区的正负带虽然没有太大差别，但288nm和290nm处的极峰却差别显著．所有这些研究结果表明，细菌视紫红质Asp38（D38）突变为Arg（R）可以延长其光循环后半程M态和N态的寿命．     

Determination of Al Composition in Strained AlGaN Layers

AlxGa1-xN/GaN heterostructures are grown on c-sapphire with the Al composition x from 0.2 to 0.4 and thicknesses from 20nm to 30nm. The lattice parameters a and c are determined from 2θ/ω scan. The AIGaN layers are found to be under tensile strain by using x-ray diffraction. Vegard＇s law induces a large deviation in Al composition determination by only considering the linear relationship between one lattice parameter （α or c） and Al composition. The accurate determination of Al composition is only possible with consideration of both the lattice parameters α and c, by assuming the tetragonal distortion in the AlGaN layer. Additionally, the results obtained from x-ray diffraction are verified by Rutherford backscattering.     

Pd-Si Binary Bulk Metallic Glass Prepared at Low Cooling Rate

We report that binary bulk metallic glasses can be made up to 6ram in diameter in a Pd Si ahoy system by air cooling at slow cooling rate (about 8 K/s). The high stability of the undercooled liquid and the large glass-forming ability (GFA) of the binary alloy are contributed to the removing of heterogeneous impurities in the alloy melt by employing the fluxing technique. It has been found that decreasing cooling rate can increase the supercooled liquid region and thermal stability of the glassy alloy. After fluxing, a wider supercooled liquid region (△T = 58 K) and higher glass-forming ability have been obtained in a Pd81Si19 binary glassy alloy prepared by slow cooling rate.     

Comparative Characterization of InGaN/GaN Multiple Quantum Wells by Transmission Electron Microscopy, X-Ray Diffraction and Rutherford Backscattering

The composition, elastic strain and structural defects of InCaN/CaN multiple quantum wells （MQWs） are comparatively investigated by using x-ray diffraction （XRD）, transmission electron microscopy and Rutherford backscattering/channelling. The InGaN well layers are fully strained on CaN, i.e. the degree of relaxation is zero. The multilayered structure has a clear defined periodic thickness and abrupt interfaces. The In composition is deduced by XRD simulation. We show how the periodic structure, the In composition, the strain status and the crystalline quality of the InGaN/GaN MQ, Ws can be determined and cross-checked by various techniques.     

利用菌紫质薄膜进行角度复用和偏振复用全息存储实验研究

全息光存储以其高密度、大容量、高速并行数据存取而成为光存储领域的一个重要研究方向。生物光致变色材料———菌紫质是一种新型可擦重写全息记录介质。实验证明了使用菌紫质薄膜进行角度复用和偏振复用全息存储的可行性。利用菌紫质的光致变色特性,采用90°角度复用全息存储光路,在BR-D96N薄膜样品同一位置上实现了6幅全息图存储,并分别读出了无串扰的再现像。利用菌紫质薄膜的光致各向异性进行了偏振复用全息存储,在BR-D96N薄膜样品的同一位置上存储了两幅正交偏振光记录的图像,用原参考光再现和偏振片选择,可分别读出这两幅图像。     

多棱锥镜产生多光束干涉场的理论和实验研究

提出了一种使用多棱锥镜和多棱台镜产生多束相干光形成二维和三维光学格子的方法。理论分析和数值模拟了多束轴对称平面波干涉产生的二维及三维点阵结构的特性,得到了光场分布随光束数增加的关系,发现随着干涉光数目的增加,干涉场会复杂变化,当棱锥棱数足够多近似于一个圆锥时,干涉场会变为同心圆结构的贝塞尔光束的场分布。实验上使用多棱锥和多棱台镜进行了多光束干涉实验,得到了多束轴对称平面波干涉形成的光学格子,将数值模拟与实验结果进行了比较,二者完全吻合。     

Block Entanglement in the Single-Hole Hubbard Model

We investigate the distribution of the entanglement of the one-dimensional single-hole Hubbard model （HM） and study the relationship between the entanglement and quantum phase transition in the model. The von Neumann entropy of a block with neighbouring spins L for a single-hole HM is calculated using the densitymatrix renormalization group. The distributions of the entanglement entropy in the ground state, as a function of block length, show a dramatic effect, i.e. effectively decoupling with the centres, no matter how the Coulomb interaction u 〉0 or u 〈0. Contrarily, for the Coulomb interaction u = 0 or close to zero, the entanglement entropy in the single-hole model reaches a saturation value for a certain block size. For a fixed size L = 40, the ground state entanglement entropy measure, as a function of u1 shows a peak corresponding to the critical quantum phase transition.     

Reduction of Dislocations in GaN Epilayer Grown on Si （111） Substrates using a GaN Intermedial Layer

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AIN/Si（111） substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional （3D） mode to the 2I） one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy （TEM） measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.     

ECRH主高压电源控制系统的设计

1引言 在托卡马克聚变研究装置中，ECRH主要被用于整体或局部的电子加热、控制电子温度和等离子体电流等重要参数的分布截面、抑制等离子体磁流体动力学不稳定性、改善等离子体约束等。ECRH高压电源的参数为：电压-55kV，电流25～30A，稳定度1％，另外，要求电源系统不仅具有快速的保护性能，并且要具有较高的稳定度。