全文获取类型
收费全文 | 4388篇 |
免费 | 209篇 |
国内免费 | 66篇 |
学科分类
工业技术 | 4663篇 |
出版年
2024年 | 2篇 |
2023年 | 108篇 |
2022年 | 156篇 |
2021年 | 194篇 |
2020年 | 142篇 |
2019年 | 131篇 |
2018年 | 154篇 |
2017年 | 146篇 |
2016年 | 105篇 |
2015年 | 86篇 |
2014年 | 200篇 |
2013年 | 353篇 |
2012年 | 165篇 |
2011年 | 326篇 |
2010年 | 216篇 |
2009年 | 233篇 |
2008年 | 218篇 |
2007年 | 196篇 |
2006年 | 253篇 |
2005年 | 164篇 |
2004年 | 127篇 |
2003年 | 114篇 |
2002年 | 116篇 |
2001年 | 96篇 |
2000年 | 92篇 |
1999年 | 79篇 |
1998年 | 78篇 |
1997年 | 69篇 |
1996年 | 57篇 |
1995年 | 47篇 |
1994年 | 40篇 |
1993年 | 33篇 |
1992年 | 46篇 |
1991年 | 26篇 |
1990年 | 21篇 |
1989年 | 15篇 |
1988年 | 30篇 |
1987年 | 12篇 |
1986年 | 12篇 |
1985年 | 2篇 |
1983年 | 2篇 |
1975年 | 1篇 |
排序方式: 共有4663条查询结果,搜索用时 679 毫秒
71.
The nitrogen doped diamond-like carbon (DLC) thin films were deposited on quartz and silicon substrates by a newly developed microwave surface-wave plasma chemical vapor deposition, aiming the application of the films for photovoltaic solar cells. For film deposition, we used argon as carrier gas, nitrogen as dopant and hydrocarbon source gases, such as camphor (C10H16O) dissolved with ethyl alcohol (C2H5OH), methane (CH4), ethylene (C2H4) and acetylene (C2H2). The optical and electrical properties of the films were studied using X-ray photoelectron spectroscopy, Nanopics 2100/NPX200 surface profiler, UV/VIS/NIR spectroscopy, atomic force microscope, electrical conductivity and solar simulator measurements. The optical band gap of the films has been lowered from 3.1 to 2.4 eV by nitrogen doping, and from 2.65 to 1.9 eV by experimenting with different hydrocarbon source gases. The nitrogen doped (flow rate: 5 sccm; atomic fraction: 5.16%) film shows semiconducting properties in dark (i.e. 8.1 × 10− 4 Ω− 1 cm− 1) and under the light illumination (i.e. 9.9 × 10− 4 Ω− 1 cm− 1). The surface morphology of the both undoped and nitrogen doped films are found to be very smooth (RMS roughness ≤ 0.5 nm). The preliminary investigation on photovoltaic properties of DLC (nitrogen doped)/p-Si structure show that open-circuit voltage of 223 mV and short-circuit current density of 8.3 × 10− 3 mA/cm2. The power conversion efficiency and fill factor of this structure were found to be 3.6 × 10− 4% and 17.9%, respectively. The use of DLC in photovoltaic solar cells is still in its infancy due to the complicated microstructure of carbon bondings, high defect density, low photoconductivity and difficulties in controlling conduction type. Our research work is in progress to realize cheap, reasonably high efficiency and environmental friendly DLC-based photovoltaic solar cells in the future. 相似文献
72.
73.
74.
微波介质陶瓷及其展望 总被引:7,自引:0,他引:7
综述了微波介质陶瓷材料的特性和发展现状,介绍了几种重要的微波介质陶瓷体系,讨论了微波介质陶瓷性能的影响因素,指出了改善其性能的途径和微波介质陶瓷的预期进展。 相似文献
75.
This study investigates the growth mechanism of IC compatible processes and to the feasibility of synthesizing networks of single-walled carbon nanotubes (SWNTs) at lower temperatures (610 °C) on Si wafer using microwave plasma chemical vapor deposition (MPCVD) with CH4 and H2 as source gases. The effects of the buffer layer materials (ZnS–SiO2, Al2O3, AlON, and AlN ) and process conditions on growth of carbon nanostructures with Co as catalyst were also examined, where the buffer layers and Co catalyst were deposited in sequence by physical vapor deposition (PVD), followed by H-plasma pretreatment before deposition of carbon nanostructures. Additionally, the morphologies and bonding structures of carbon nanostructures were characterized by field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM), and Raman Spectroscopy. Analytical results demonstrate that networks of SWNTs are more favorable to be synthesized by selecting proper buffer layer material (e.g., AlON), and under higher temperatures, thinner catalyst thickness (e.g., 5 nm) and lower CH4 / H2 ratio (e.g., 5 / 100 sccm/sccm). The networks of SWNTs can be fabricated at temperatures as low as 610 °C by manipulating these parameters. In conclusion, the growth mechanism determines the conditions for the formation of nano-sized extrusions on catalyst particles surface. 相似文献
76.
Sudip Adhikari Sunil Adhikary Ashraf M.M. Omer Mohamad Rusop Hideo Uchida Tetsuo Soga Masayoshi Umeno 《Diamond and Related Materials》2005,14(11-12):1824
Nitrogenated diamond-like (DLC:N) carbon thin films have been deposited by microwave surface wave plasma chemical vapor deposition on silicon and quartz substrates, using argon gas, camphor dissolved in ethyl alcohol composition and nitrogen as plasma source. The deposited DLC:N films were characterized for their chemical, optical, structural and electrical properties through X-ray photoelectron spectroscopy, UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current–voltage characteristics. Optical band gap decreased (2.7 to 2.4 eV) with increasing Ar gas flow rate. The photovoltaic measurements of DLC:N / p-Si structure show that the open-circuit voltage (Voc) of 168.8 mV and a short-circuit current density (Jsc) of 8.4 μA/cm2 under light illumination (AM 1.5 100 mW/cm2). The energy conversion efficiency and fill factor were found to be 3.4 × 10− 4% and 0.238 respectively. 相似文献
77.
78.
Masaya Ibe Sinue Gmez Kinga A. Malinger Paul Fanson Steven L. Suib 《Applied catalysis. B, Environmental》2007,69(3-4):235-239
The activity of NOx storage-reduction (NSR) catalysts is greatly reduced by sulfur poisoning, caused by the SO2 present in the exhaust stream. Desorption of sulfur species from poisoned NSR catalysts occurs at temperatures in excess of 600 °C using reducing atmospheres and conventional heating. In this work, microwave (MW) heating has been used to promote desulfurization of poisoned NSR catalysts. The experiments were carried out by heating the catalyst with MW radiation and using hydrogen as the reducing gas. Desorption of H2S at 200 °C was observed. Desorption at even lower temperatures (150 °C) was observed when water was introduced to the system. In the presence of water, sulfur species desorbed as both H2S and SO2. An overall reduction of sulfur species of about 60% was obtained. The use of MW heating proves to be an efficient way to achieve regeneration of poisoned NSR catalysts. 相似文献
79.
用化学纯ZrO2和硼酸(H3BO3)以及工业铝粉为原料,首先采用微波合成的方法确定原位合成ZrB2的最佳原料配比为m(ZrO2):m(H3BO3):m(Al)=3:6:20,然后在不同温度下(分别为850℃、950℃、1050℃、1150℃、1250℃和1350℃)分别保温3h,在镁碳材料中原位合成ZrB2,并用XRD、SEM和EDAX对合成后的试样进行分析。试验结果表明:在850℃的反应温度下,ZrO2不能转化成ZrB2;ZrO2从950℃开始转化成ZrB2,并且随着温度升高,ZrO2转化成ZrB2的量越多。从SEM可以看出,在较高温度下,ZrB2分布在石墨周围,对石墨起到很好的包覆作用。 相似文献
80.
本文论述了以过热水蒸汽作为干燥介质代替热风的干燥新技术的原理、优越性、存在的问题以及发展前景,并对微波对流干燥器的原理、特点等作了描述。 相似文献